Infineon Technologies IRFR4620TRLPBF

Name: IRFR4620TRLPBF
Brand: Infineon Technologies
SKU: 2482775-IRFR4620TRLPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRFR4620TRLPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2482775-IRFR4620TRLPBF

Description:: MOSFET N-CH 200V 24A DPAK

ECAD Model:

Datasheet:: IRFR4620TRLPBF

Specifications

Infineon Technologies IRFR4620TRLPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFR4620TRLPBF.

Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
HEXFET®
Published
2009
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Resistance
78MOhm
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
144W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
144W
Case Connection
DRAIN
Turn On Delay Time
13.4 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
78m Ω @ 15A, 10V
Vgs(th) (Max) @ Id
5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds
1710pF @ 50V
Current - Continuous Drain (Id) @ 25°C
24A Tc
Gate Charge (Qg) (Max) @ Vgs
38nC @ 10V
Rise Time
22.4ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
14.8 ns
Turn-Off Delay Time
25.4 ns
Continuous Drain Current (ID)
24A
JEDEC-95 Code
TO-252AA
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
200V
Max Junction Temperature (Tj)
175°C
Height
2.52mm
Length
10.3886mm
Width
6.73mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IRFR4620TRLPBF Description
International Rectifier's Fifth Generation HEXFETs employ cutting-edge manufacturing procedures to provide the lowest on-resistance per silicon area achievable. When HEXFET Power MOSFETs' fast switching speed and ruggedized device architecture are coupled, the designer has a highly efficient device that may be used in a variety of applications.

IRFR4620TRLPBF Features
Ruggedness of the Gate, Avalanche, and Dynamic dV/dt
Avalanche SOA and fully characterized capacitance
Lead-free body diode with improved dV/dt and dI/dt capability

IRFR4620TRLPBF Applications
Synchronous Rectification with High Efficiency in SMPS
Uninterruptible Power Supply (UPS) is a type of power supply that is
Power Switching at High Speed
Circuits with hard switches and high frequencies

IRFR4620TRLPBF More Descriptions

N CH POWER MOSFET, NEXFET, 200V, 24A, DPAK; Transistor Polarity:N Channel; Conti
Single N-Channel 200 V 78 mOhm 38 nC HEXFET® Power Mosfet - TO-252-3
Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Lighting LED
MOSFET N-CH 200V 24A DPAK / Trans MOSFET N-CH 200V 24A 3-Pin(2 Tab) DPAK T/R
200V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHSInfineon SCT
MOSFET, N-CH, 200V, 24A, TO-252AA; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Source Voltage Vds:200V; On Resistance
Power Field-Effect Transistor, 24A I(D), 200V, 0.078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N-CH, 200V, 24A, TO-252AA; Transistor Polarity: N Channel; Continuous Drain Current Id: 24A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.064ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissipation Pd: 144W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Product Comparison

The three parts on the right have similar specifications to IRFR4620TRLPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Technology

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Max Junction Temperature (Tj)

Height

Length

Width

Radiation Hardening

RoHS Status

Lead Free

Reach Compliance Code

Drain to Source Voltage (Vdss)

Surface Mount

Additional Feature

Terminal Position

Qualification Status

Configuration

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Supplier Device Package

Weight

Max Operating Temperature

Min Operating Temperature

Voltage - Rated DC

Current Rating

Input Capacitance

Drain to Source Resistance

Rds On Max

View Compare
IRFR4620TRLPBF

Infineon Technologies

12 Weeks

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2009

e3

Active

1 (Unlimited)

2

EAR99

78MOhm

Matte Tin (Sn) - with Nickel (Ni) barrier

FET General Purpose Power

MOSFET (Metal Oxide)

GULL WING

260

30

R-PSSO-G2

1

1

144W Tc

Single

ENHANCEMENT MODE

144W

DRAIN

13.4 ns

N-Channel

SWITCHING

78m Ω @ 15A, 10V

5V @ 100μA

1710pF @ 50V

24A Tc

38nC @ 10V

22.4ns

10V

±20V

14.8 ns

25.4 ns

24A

TO-252AA

20V

200V

175°C

2.52mm

10.3886mm

6.73mm

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRFR12N25DTRLP

Infineon Technologies

-

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2004

-

Obsolete

1 (Unlimited)

-

EAR99

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

144W Tc

-

-

-

-

-

N-Channel

-

260m Ω @ 8.4A, 10V

5V @ 250μA

810pF @ 25V

14A Tc

35nC @ 10V

-

10V

±30V

-

-

-

-

-

-

-

-

-

-

-

-

-

compliant

250V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRFR4620TRLPBF vs IRFR12N25DTRLP
IRFR1010Z

Infineon Technologies

-

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

SILICON

-55°C~175°C TJ

Tube

HEXFET®

2004

e0

Obsolete

1 (Unlimited)

2

EAR99

-

TIN LEAD

-

MOSFET (Metal Oxide)

GULL WING

245

30

R-PSSO-G2

1

-

140W Tc

-

ENHANCEMENT MODE

-

DRAIN

-

N-Channel

SWITCHING

7.5m Ω @ 42A, 10V

4V @ 100μA

2840pF @ 25V

42A Tc

95nC @ 10V

-

10V

±20V

-

-

-

TO-252AA

-

-

-

-

-

-

-

Non-RoHS Compliant

-

-

55V

YES

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

SINGLE

Not Qualified

SINGLE WITH BUILT-IN DIODE

42A

0.0075Ohm

360A

55V

110 mJ

-

-

-

-

-

-

-

-

-

IRFR4620TRLPBF vs IRFR1010Z
IRFR020

Vishay Siliconix

-

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

-

-55°C~150°C TJ

Tube

-

2016

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

1

2.5W Ta 42W Tc

Single

-

-

-

13 ns

N-Channel

-

100mOhm @ 8.4A, 10V

4V @ 250μA

640pF @ 25V

14A Tc

25nC @ 10V

58ns

10V

±20V

42 ns

25 ns

14A

-

20V

60V

-

2.39mm

6.73mm

6.22mm

-

Non-RoHS Compliant

Contains Lead

-

60V

-

-

-

-

-

-

-

-

-

-

D-Pak

1.437803g

150°C

-55°C

50V

15A

640pF

100mOhm

100 mΩ

IRFR4620TRLPBF vs IRFR020

Certification

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IOR

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IRFR120NTRPBF

IOR

original in stock
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IRFR4620TRLPBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRFR4620TRLPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 200V 24A 3-Pin(2 Tab) DPAK T/R	3000	9 $3.111 10 $2.0528 50 $1.6703 100 $1.4152 200 $1.2521
IRFR4620TRLPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 200V 24A DPAK RoHS: Compliant	5975	1 $2 10 $1.784 100 $1.4302 500 $1.1303 1000 $0.91216
IRFR4620TRLPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 200V 24A DPAK RoHS: Compliant	5975	1 $2 10 $1.784 100 $1.4302 500 $1.1303 1000 $0.91216
IRFR4620TRLPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 200V 24A DPAK RoHS: Compliant	3000	3000 $0.83265
IRFR4620TRLPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 200V 24A 3-Pin(2 Tab) DPAK T/R RoHS: Compliant	3000	1 $2.46 10 $1.61 50 $1.31 100 $1.11
IRFR4620TRLPBF-EL DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 200V 24A 3-Pin(2 Tab) DPAK T/R - RoHS: Compliant	69000	3000 $0.5539 6000 $0.5339 12000 $0.5149 18000 $0.4979 30000 $0.4889
IRFR4620TRLPBF-EL DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 200V 24A 3-Pin(2 Tab) DPAK T/R - RoHS: Compliant	0	1 $0.7119 30 $0.6869 75 $0.6629 150 $0.6409 375 $0.6199 750 $0.6009 1500 $0.5829
IRFR4620TRLPBF-EL DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 200V 24A 3-Pin(2 Tab) DPAK T/R ( RoHS: Compliant	0
IRFR4620TRLPBF-EL DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 200V 24A 3-Pin(2 Tab) DPAK T/R ( RoHS: Compliant	0
IRFR4620TRLPBF-EL DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 200V 24A 3-Pin(2 Tab) DPAK T/R ( RoHS: Compliant	0	3000 $0.6999 6000 $0.5719 12000 $0.5249 18000 $0.4839 30000 $0.4499
IRFR4620TRLPBF DISTI #	Infineon Technologies AG	MOSFET, N-CH, 200V, 24A, TO-252AA, Transistor Pol	0	1 $1.83 10 $1.58 25 $1.48 50 $1.35 100 $1.24 250 $1.18 500 $1.11 1000 $0.895
IRFR4620TRLPBF DISTI #	Infineon Technologies AG	IRFR4620TRLPBF N-channel MOSFET Transistor, 24 A, RoHS: Compliant	0	3000 $1.49
IRFR4620TRLPBF. DISTI #	Infineon Technologies AG	Infineon IRFR4620TRLPBF N-channel MOSFET, 24 A, RoHS: Not Compliant	0	50 $0.73
IRFR4620TRLPBF DISTI #	Infineon Technologies AG	MOSFET MOSFT 200V 24A 78mOhm 25nC Qg RoHS: Compliant	208	1 $1.58 10 $1.35 100 $1.04 500 $0.915 1000 $0.722 3000 $0.641
IRFR4620TRLPBF DISTI #	Infineon Technologies AG	N-Ch 200V 24A 144W 0,078R TO252AA RoHS: Compliant	1900	50 $0.618 100 $0.538 500 $0.498 3000 $0.4795
IRFR4620TRLPBF DISTI #	Infineon Technologies AG	MOSFET, N-CH, 200V, 24A, TO-252AA RoHS: Compliant	70	5 $1.06 25 $0.874 100 $0.795 250 $0.761 500 $0.669
IRFR4620TRLPBF DISTI #	Infineon Technologies AG	MOSFET, N-CH, 200V, 24A, TO-252AA RoHS: Compliant	0	1 $3.03 10 $2.68 100 $2.12 500 $1.64 1000 $1.3

IRFR462~~(4)~~
IRFR46~~(8)~~
IRFR4~~(60)~~
IRFR~~(57)~~
IRF~~(69)~~

Infineon Technologies IRFR4620TRLPBF

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