Infineon Technologies IRFP260MPBF
- Part Number:
- IRFP260MPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2483191-IRFP260MPBF
- Description:
- MOSFET N-CH 200V 50A TO-247AC
- ECAD Model:
-
- Datasheet:
- IRFP260MPBF
Infineon Technologies IRFP260MPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFP260MPBF.
- Factory Lead Time12 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2010
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMATTE TIN OVER NICKEL
- Additional FeatureAVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)250
- Time@Peak Reflow Temperature-Max (s)30
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max300W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation300W
- Turn On Delay Time17 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs40m Ω @ 28A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds4057pF @ 25V
- Current - Continuous Drain (Id) @ 25°C50A Tc
- Gate Charge (Qg) (Max) @ Vgs234nC @ 10V
- Rise Time60ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)48 ns
- Turn-Off Delay Time55 ns
- Continuous Drain Current (ID)50A
- Threshold Voltage4V
- JEDEC-95 CodeTO-247AC
- Gate to Source Voltage (Vgs)20V
- Drain-source On Resistance-Max0.04Ohm
- Drain to Source Breakdown Voltage200V
- Pulsed Drain Current-Max (IDM)200A
- Avalanche Energy Rating (Eas)560 mJ
- Height21.1mm
- Length16.129mm
- Width5.2mm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRFP260MPBF Description
Infineon's IR MOSFETTM technology employs advanced processing techniques to provide ultra-low on-resistance per silicon area. This benefit, when paired with the high switching speed and durable device architecture that IR MOSFETTM devices are known for, gives the designer an exceptionally efficient and reliable device that can be used in a wide range of applications.
IRFP260MPBF Features
Advanced Process Technology (APT) is a term that refers to a type of technology
dv/dt Rating dv/dt Rating dv/dt Rating dv/dt Rating
Operating Temperature: 175°C
Quick Switching
Avalanche-Resistant
Parallelization Ease
Requirements for a Simple Drive
Lead-Free
IRFP260MPBF Applications
Switching applications
Infineon's IR MOSFETTM technology employs advanced processing techniques to provide ultra-low on-resistance per silicon area. This benefit, when paired with the high switching speed and durable device architecture that IR MOSFETTM devices are known for, gives the designer an exceptionally efficient and reliable device that can be used in a wide range of applications.
IRFP260MPBF Features
Advanced Process Technology (APT) is a term that refers to a type of technology
dv/dt Rating dv/dt Rating dv/dt Rating dv/dt Rating
Operating Temperature: 175°C
Quick Switching
Avalanche-Resistant
Parallelization Ease
Requirements for a Simple Drive
Lead-Free
IRFP260MPBF Applications
Switching applications
IRFP260MPBF More Descriptions
Trans MOSFET N-CH Si 200V 50A 3-Pin(3 Tab) TO-247AC Tube / MOSFET N-CH 200V 50A TO-247AC
Single N-Channel 200 V 0.04 Ohm 234 nC HEXFET® Power Mosfet - TO-247-3AC
200V Single N-Channel HEXFET Power MOSFET in a TO-247AC Series M package, TO247-3, RoHSInfineon SCT
Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:50A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:300W; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon IRFP260MPBF.
MOSFET Operating temperature: -55...175 °C Housing type: TO-247-3 Polarity: N Variants: Enhancement mode Power dissipation: 300 W
Power Field-Effect Transistor, 50A I(D), 200V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
Single N-Channel 200 V 0.04 Ohm 234 nC HEXFET® Power Mosfet - TO-247-3AC
200V Single N-Channel HEXFET Power MOSFET in a TO-247AC Series M package, TO247-3, RoHSInfineon SCT
Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:50A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:300W; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon IRFP260MPBF.
MOSFET Operating temperature: -55...175 °C Housing type: TO-247-3 Polarity: N Variants: Enhancement mode Power dissipation: 300 W
Power Field-Effect Transistor, 50A I(D), 200V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
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