IRFH5302TR2PBF

Infineon Technologies IRFH5302TR2PBF

Part Number:
IRFH5302TR2PBF
Manufacturer:
Infineon Technologies
Ventron No:
2493742-IRFH5302TR2PBF
Description:
MOSFET N-CH 30V 32A 5X6 PQFN
ECAD Model:
Datasheet:
IRFH5302TR2PBF

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Specifications
Infineon Technologies IRFH5302TR2PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFH5302TR2PBF.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerVDFN
  • Number of Pins
    8
  • Supplier Device Package
    PQFN (5x6) Single Die
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Cut Tape (CT)
  • Series
    HEXFET®
  • Published
    2009
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Max Power Dissipation
    3.6W
  • Technology
    MOSFET (Metal Oxide)
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    100W
  • Turn On Delay Time
    18 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    2.1mOhm @ 50A, 10V
  • Vgs(th) (Max) @ Id
    2.35V @ 100μA
  • Input Capacitance (Ciss) (Max) @ Vds
    4400pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    32A Ta 100A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    76nC @ 10V
  • Rise Time
    51ns
  • Drain to Source Voltage (Vdss)
    30V
  • Fall Time (Typ)
    18 ns
  • Turn-Off Delay Time
    22 ns
  • Continuous Drain Current (ID)
    100A
  • Threshold Voltage
    1.8V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    30V
  • Input Capacitance
    4.4nF
  • Recovery Time
    29 ns
  • Drain to Source Resistance
    2.1mOhm
  • Rds On Max
    2.1 mΩ
  • Nominal Vgs
    1.8 V
  • Height
    810μm
  • Length
    5mm
  • Width
    6mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
IRFH5302TR2PBF Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 4400pF @ 15V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 100A.With a drain-source breakdown voltage of 30V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 30V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 22 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 2.1mOhm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 18 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.1.8V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30V.

IRFH5302TR2PBF Features
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 22 ns
single MOSFETs transistor is 2.1mOhm
a threshold voltage of 1.8V
a 30V drain to source voltage (Vdss)


IRFH5302TR2PBF Applications
There are a lot of Infineon Technologies
IRFH5302TR2PBF applications of single MOSFETs transistors.


Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
IRFH5302TR2PBF More Descriptions
Single N-Channel 30 V 2.1 mOhm 29 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
30V Single N-Channel HEXFET Power MOSFET in a PQFN 5x6mm package
MOSFET, N CH, 30V, 100A, 8PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:32A; Drain Source Voltage Vds:30V; On Resistance Rds(on):1.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:100W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:100A; Power Dissipation Pd:100W; Voltage Vgs Max:20V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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