Infineon Technologies IRFH5302TR2PBF
- Part Number:
- IRFH5302TR2PBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2493742-IRFH5302TR2PBF
- Description:
- MOSFET N-CH 30V 32A 5X6 PQFN
- Datasheet:
- IRFH5302TR2PBF
Infineon Technologies IRFH5302TR2PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFH5302TR2PBF.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-PowerVDFN
- Number of Pins8
- Supplier Device PackagePQFN (5x6) Single Die
- Operating Temperature-55°C~150°C TJ
- PackagingCut Tape (CT)
- SeriesHEXFET®
- Published2009
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Max Power Dissipation3.6W
- TechnologyMOSFET (Metal Oxide)
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation100W
- Turn On Delay Time18 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs2.1mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id2.35V @ 100μA
- Input Capacitance (Ciss) (Max) @ Vds4400pF @ 15V
- Current - Continuous Drain (Id) @ 25°C32A Ta 100A Tc
- Gate Charge (Qg) (Max) @ Vgs76nC @ 10V
- Rise Time51ns
- Drain to Source Voltage (Vdss)30V
- Fall Time (Typ)18 ns
- Turn-Off Delay Time22 ns
- Continuous Drain Current (ID)100A
- Threshold Voltage1.8V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage30V
- Input Capacitance4.4nF
- Recovery Time29 ns
- Drain to Source Resistance2.1mOhm
- Rds On Max2.1 mΩ
- Nominal Vgs1.8 V
- Height810μm
- Length5mm
- Width6mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
IRFH5302TR2PBF Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 4400pF @ 15V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 100A.With a drain-source breakdown voltage of 30V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 30V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 22 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 2.1mOhm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 18 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.1.8V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30V.
IRFH5302TR2PBF Features
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 22 ns
single MOSFETs transistor is 2.1mOhm
a threshold voltage of 1.8V
a 30V drain to source voltage (Vdss)
IRFH5302TR2PBF Applications
There are a lot of Infineon Technologies
IRFH5302TR2PBF applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 4400pF @ 15V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 100A.With a drain-source breakdown voltage of 30V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 30V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 22 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 2.1mOhm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 18 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.1.8V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30V.
IRFH5302TR2PBF Features
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 22 ns
single MOSFETs transistor is 2.1mOhm
a threshold voltage of 1.8V
a 30V drain to source voltage (Vdss)
IRFH5302TR2PBF Applications
There are a lot of Infineon Technologies
IRFH5302TR2PBF applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
IRFH5302TR2PBF More Descriptions
Single N-Channel 30 V 2.1 mOhm 29 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
30V Single N-Channel HEXFET Power MOSFET in a PQFN 5x6mm package
MOSFET, N CH, 30V, 100A, 8PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:32A; Drain Source Voltage Vds:30V; On Resistance Rds(on):1.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:100W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:100A; Power Dissipation Pd:100W; Voltage Vgs Max:20V
30V Single N-Channel HEXFET Power MOSFET in a PQFN 5x6mm package
MOSFET, N CH, 30V, 100A, 8PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:32A; Drain Source Voltage Vds:30V; On Resistance Rds(on):1.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:100W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:100A; Power Dissipation Pd:100W; Voltage Vgs Max:20V
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