Infineon Technologies IRF7811AVTRPBF
- Part Number:
- IRF7811AVTRPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2479291-IRF7811AVTRPBF
- Description:
- MOSFET N-CH 30V 10.8A 8-SOIC
- ECAD Model:
-
- Datasheet:
- IRF7811AVTRPBF
Infineon Technologies IRF7811AVTRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7811AVTRPBF.
- Factory Lead Time12 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published2004
- JESD-609 Codee3
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- Resistance14MOhm
- SubcategoryFET General Purpose Power
- Voltage - Rated DC30V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating10.8A
- Time@Peak Reflow Temperature-Max (s)30
- Number of Elements1
- Power Dissipation-Max2.5W Ta
- Element ConfigurationSingle
- Power Dissipation2.5W
- Turn On Delay Time8.6 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs14m Ω @ 15A, 4.5V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1801pF @ 10V
- Current - Continuous Drain (Id) @ 25°C10.8A Ta
- Gate Charge (Qg) (Max) @ Vgs26nC @ 5V
- Rise Time21ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V
- Vgs (Max)±20V
- Fall Time (Typ)10 ns
- Turn-Off Delay Time43 ns
- Continuous Drain Current (ID)10.8A
- Threshold Voltage3V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage30V
- Nominal Vgs3 V
- Height1.4986mm
- Length4.9784mm
- Width3.9878mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRF7811AVTRPBF Description
IRF7811AVTRPBF is a kind of N-channel application-specific MOSFET developed by Infineon Technologies based on the advanced HEXFET MOSFET technology. It is designed to achieve an unprecedented balance of on-resistance and gate charge. It is well suited for high-efficiency DC-DC converters due to its reduced conduction and switching losses. It is optimized for low RDS (on), low gate charge, and Cdv/dt-induced turn-on immunity.
IRF7811AVTRPBF Features
Low conduction losses
Low switching losses
Available in the SO-8 package
Advanced HEXFET MOSFET technology
Unprecedented balance of on-resistance and gate charge
IRF7811AVTRPBF Applications
High-efficiency DC-DC converters
Control FET applications
Synchronous FET applications
IRF7811AVTRPBF is a kind of N-channel application-specific MOSFET developed by Infineon Technologies based on the advanced HEXFET MOSFET technology. It is designed to achieve an unprecedented balance of on-resistance and gate charge. It is well suited for high-efficiency DC-DC converters due to its reduced conduction and switching losses. It is optimized for low RDS (on), low gate charge, and Cdv/dt-induced turn-on immunity.
IRF7811AVTRPBF Features
Low conduction losses
Low switching losses
Available in the SO-8 package
Advanced HEXFET MOSFET technology
Unprecedented balance of on-resistance and gate charge
IRF7811AVTRPBF Applications
High-efficiency DC-DC converters
Control FET applications
Synchronous FET applications
IRF7811AVTRPBF More Descriptions
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 11 Milliohms;ID 10.8A;SO-8;PD 2.5W;VGS /-20
Single N-Channel 30 V 14 mOhm 17 nC HEXFET® Power Mosfet - SOIC-8
Small Signal Field-Effect Transistor, 10.8A I(D), 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:14A; On Resistance, Rds(on):14mohm; Rds(on) Test Voltage, Vgs:20V; Package/Case:8-SO ;RoHS Compliant: Yes
Single N-Channel 30 V 14 mOhm 17 nC HEXFET® Power Mosfet - SOIC-8
Small Signal Field-Effect Transistor, 10.8A I(D), 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:14A; On Resistance, Rds(on):14mohm; Rds(on) Test Voltage, Vgs:20V; Package/Case:8-SO ;RoHS Compliant: Yes
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