Infineon Technologies IRF540NPBF

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 44Milliohms;ID 33A;TO-220AB;PD 130W;-55deg
Single N-Channel 100 V 44 mOhm 71 nC HEXFET® Power Mosfet - TO-220-3
Transistor NPN Mos IRF540/IRF540N INTERNATIONAL RECTIFIER Ampere=28 V=100 TO220Halfin
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHSInfineon SCT
Transistor MOSFET N-Ch. 33A/100V TO220 IRF 540 N PBF
Trans MOSFET N-CH Si 100V 33A 3-Pin(3 Tab) TO-220AB Full-Pak Tube
N CHANNEL, MOSFET, 100V, 33A, TO-220AB;; TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:33A;
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 130 W
Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
100V 33A RDSON 44mOHM TO- 220AB IR IRF540N Interna tional Rectifier Descrip tion: MOSFET; N-Channel; 100 V (Min.); 33 A (Max.) ; 130 W (Max.); 11 ns (Ty p.)
N Channel, Mosfet, 100V, 33A, To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:33A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon IRF540NPBF.
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull