IRF1010ZLPBF

Infineon Technologies IRF1010ZLPBF

Part Number:
IRF1010ZLPBF
Manufacturer:
Infineon Technologies
Ventron No:
3586918-IRF1010ZLPBF
Description:
MOSFET N-CH 55V 75A TO-262
ECAD Model:
Datasheet:
IRF1010ZLPBF

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Specifications
Infineon Technologies IRF1010ZLPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF1010ZLPBF.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-262-3 Long Leads, I2Pak, TO-262AA
  • Number of Pins
    3
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Published
    2004
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Voltage - Rated DC
    55V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    75A
  • Number of Elements
    1
  • Power Dissipation-Max
    140W Tc
  • Power Dissipation
    140W
  • Turn On Delay Time
    18 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    7.5m Ω @ 75A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2840pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    75A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    95nC @ 10V
  • Rise Time
    150ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    92 ns
  • Turn-Off Delay Time
    36 ns
  • Continuous Drain Current (ID)
    75A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    55V
  • Height
    9.65mm
  • Length
    10.668mm
  • Width
    4.826mm
  • Radiation Hardening
    No
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
IRF1010ZLPBF Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2840pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 55V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 55V.As a result of its turn-off delay time, which is 36 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 18 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (10V).

IRF1010ZLPBF Features
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 36 ns


IRF1010ZLPBF Applications
There are a lot of Infineon Technologies
IRF1010ZLPBF applications of single MOSFETs transistors.


DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
IRF1010ZLPBF More Descriptions
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
MOSFET, 55V, 94A, 7.5 MOHM, 63 NC QG, TO-262
Trans MOSFET N-CH 55V 94A 3-Pin(3 Tab) TO-262
IGBT Transistors MOSFET MOSFT 55V 94A 7.5mOhm 63nC
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:75A; On Resistance, Rds(on):7.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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