Infineon Technologies IRF1010ZLPBF
- Part Number:
- IRF1010ZLPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3586918-IRF1010ZLPBF
- Description:
- MOSFET N-CH 55V 75A TO-262
- Datasheet:
- IRF1010ZLPBF
Infineon Technologies IRF1010ZLPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF1010ZLPBF.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-262-3 Long Leads, I2Pak, TO-262AA
- Number of Pins3
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2004
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Voltage - Rated DC55V
- TechnologyMOSFET (Metal Oxide)
- Current Rating75A
- Number of Elements1
- Power Dissipation-Max140W Tc
- Power Dissipation140W
- Turn On Delay Time18 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs7.5m Ω @ 75A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2840pF @ 25V
- Current - Continuous Drain (Id) @ 25°C75A Tc
- Gate Charge (Qg) (Max) @ Vgs95nC @ 10V
- Rise Time150ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)92 ns
- Turn-Off Delay Time36 ns
- Continuous Drain Current (ID)75A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage55V
- Height9.65mm
- Length10.668mm
- Width4.826mm
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
IRF1010ZLPBF Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2840pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 55V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 55V.As a result of its turn-off delay time, which is 36 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 18 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (10V).
IRF1010ZLPBF Features
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 36 ns
IRF1010ZLPBF Applications
There are a lot of Infineon Technologies
IRF1010ZLPBF applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2840pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 55V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 55V.As a result of its turn-off delay time, which is 36 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 18 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (10V).
IRF1010ZLPBF Features
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 36 ns
IRF1010ZLPBF Applications
There are a lot of Infineon Technologies
IRF1010ZLPBF applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
IRF1010ZLPBF More Descriptions
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
MOSFET, 55V, 94A, 7.5 MOHM, 63 NC QG, TO-262
Trans MOSFET N-CH 55V 94A 3-Pin(3 Tab) TO-262
IGBT Transistors MOSFET MOSFT 55V 94A 7.5mOhm 63nC
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:75A; On Resistance, Rds(on):7.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes
MOSFET, 55V, 94A, 7.5 MOHM, 63 NC QG, TO-262
Trans MOSFET N-CH 55V 94A 3-Pin(3 Tab) TO-262
IGBT Transistors MOSFET MOSFT 55V 94A 7.5mOhm 63nC
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:75A; On Resistance, Rds(on):7.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes
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