Infineon Technologies IRF1010EZSTRLP

IRF1010EZSTRLP Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2810pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 75A amps.In this device, the drain-source breakdown voltage is 60V and VGS=60V, so the drain-source breakdown voltage is 60V in this case.It is [38 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 19 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (10V).

IRF1010EZSTRLP Features
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 38 ns


IRF1010EZSTRLP Applications
There are a lot of Infineon Technologies
IRF1010EZSTRLP applications of single MOSFETs transistors.


Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies