Infineon Technologies IR2182S

Name: IR2182S
Brand: Infineon Technologies
SKU: 4547442-IR2182S
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IR2182S

Manufacturer:: Infineon Technologies

Ventron No:: 4547442-IR2182S

Description:: IC DRIVER HIGH/LOW SIDE 8-SOIC

ECAD Model:

Datasheet:: IR2182S

Specifications

Infineon Technologies IR2182S technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IR2182S.

Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Operating Temperature
-40°C~150°C TJ
Packaging
Tube
Published
2004
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Voltage - Supply
10V~20V
Base Part Number
IR2182S
Input Type
Non-Inverting
Rise / Fall Time (Typ)
40ns 20ns
Channel Type
Independent
Number of Drivers
2
Driven Configuration
Half-Bridge
Gate Type
IGBT, N-Channel MOSFET
Current - Peak Output (Source, Sink)
1.9A 2.3A
Logic Voltage - VIL, VIH
0.8V 2.7V
High Side Voltage - Max (Bootstrap)
600V
RoHS Status
Non-RoHS Compliant

Description

IR2182S Overview
The IR2182S is a surface mount device designed for use in a wide range of operating temperatures, from -40°C to 150°C TJ. This makes it suitable for a variety of industrial and automotive applications. The device is packaged in a tube, which provides protection during shipping and storage. However, it should be noted that the IR2182S is now considered obsolete, meaning it is no longer being actively produced. Despite this, it is still a highly capable device, with a voltage supply range of 10V to 20V. Its input type is non-inverting and it can be used with both IGBT and N-channel MOSFET gate types. Additionally, it has a peak output current of 1.9A for sourcing and 2.3A for sinking. The logic voltage levels for this device are 0.8V for VIL and 2.7V for VIH. Overall, the IR2182S offers reliable performance and versatility in a compact surface mount package.

IR2182S Features
Embedded in the Tube package
2 drivers
Employing a gate type of IGBT, N-Channel MOSFET
High-side voltage - Max (Bootstrap) of 600V

IR2182S Applications
There are a lot of Infineon Technologies IR2182S gate drivers applications.

Solar inverters
Motor Drives
Active Clamp Flyback or Forward and Synchronous Rectifier
DC-DC Converters
Industrial Motor Inverter - Power Tools, Robotics
Industrial Modules
White Goods - Air Conditioner, Washing Machine,
Automotive Applications
Driving GaN Power Transistors used in Full or Half?Bridge, LLC,
LCD/LCoS/DLP portable and embedded pico projectors

IR2182S More Descriptions

IC Driver High/low Side 8-SOIC
IC GATE DRVR HALF-BRIDGE 8SOIC
The IR2181(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.

Product Comparison

The three parts on the right have similar specifications to IR2182S.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Voltage - Supply

Base Part Number

Input Type

Rise / Fall Time (Typ)

Channel Type

Number of Drivers

Driven Configuration

Gate Type

Current - Peak Output (Source, Sink)

Logic Voltage - VIL, VIH

High Side Voltage - Max (Bootstrap)

RoHS Status

Surface Mount

Number of Terminations

ECCN Code

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Number of Functions

Supply Voltage

Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Output Characteristics

Output Polarity

Input Characteristics

Output Peak Current Limit-Nom

High Side Driver

Height Seated (Max)

Length

Width

Supplier Device Package

Factory Lead Time

Mount

Number of Pins

Termination

Subcategory

Max Power Dissipation

Number of Outputs

Output Voltage

Max Output Current

Power Supplies

Nominal Supply Current

Power Dissipation

Output Current

Max Supply Current

Propagation Delay

Turn On Delay Time

Max Output Voltage

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Min Output Voltage

Height

Radiation Hardening

REACH SVHC

Lead Free

View Compare
IR2182S

Infineon Technologies

Surface Mount

8-SOIC (0.154, 3.90mm Width)

-40°C~150°C TJ

Tube

2004

Obsolete

1 (Unlimited)

10V~20V

IR2182S

Non-Inverting

40ns 20ns

Independent

2

Half-Bridge

IGBT, N-Channel MOSFET

1.9A 2.3A

0.8V 2.7V

600V

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IR2102S

Infineon Technologies

Surface Mount

8-SOIC (0.154, 3.90mm Width)

-40°C~150°C TJ

Tube

1996

Obsolete

1 (Unlimited)

10V~20V

IR2102S

Inverting

100ns 50ns

Independent

2

Half-Bridge

IGBT, N-Channel MOSFET

210mA 360mA

0.8V 3V

600V

Non-RoHS Compliant

YES

8

EAR99

CMOS

DUAL

GULL WING

NOT SPECIFIED

1

15V

NOT SPECIFIED

R-PDSO-G8

Not Qualified

TOTEM-POLE

INVERTED

SCHMITT TRIGGER

0.36A

YES

1.75mm

4.9mm

3.9mm

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IR2182S vs IR2102S
IR21074S

Infineon Technologies

Surface Mount

14-SOIC (0.154, 3.90mm Width)

-40°C~150°C TJ

Tube

2000

Obsolete

1 (Unlimited)

10V~20V

IR21074S

Inverting

150ns 50ns

Independent

2

Half-Bridge

IGBT, N-Channel MOSFET

200mA 350mA

0.8V 2.7V

600V

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

14-SOIC

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IR2182S vs IR21074S
IR2101PBF

Infineon Technologies

Through Hole

8-DIP (0.300, 7.62mm)

-40°C~150°C TJ

Tube

1996

Active

1 (Unlimited)

10V~20V

IR2101PBF

Non-Inverting

100ns 50ns

Independent

-

Half-Bridge

IGBT, N-Channel MOSFET

210mA 360mA

0.8V 3V

600V

ROHS3 Compliant

-

8

EAR99

CMOS

DUAL

-

-

1

15V

-

-

-

-

-

-

0.36A

YES

-

10.8966mm

7.11mm

-

12 Weeks

Through Hole

8

Through Hole

MOSFET Drivers

1W

2

620V

360mA

15V

270μA

1W

210mA

270μA

220 ns

50 ns

20V

170ns

90 ns

150 ns

10V

4.9276mm

No

No SVHC

Lead Free

IR2182S vs IR2101PBF