Infineon Technologies IR2136PBF
- Part Number:
- IR2136PBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3735701-IR2136PBF
- Description:
- IC DRIVER BRIDGE 3-PHASE 28-DIP
- Datasheet:
- IR2136PBF
Infineon Technologies IR2136PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IR2136PBF.
- Factory Lead Time12 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / Case28-DIP (0.600, 15.24mm)
- Number of Pins28
- Operating Temperature-40°C~150°C TJ
- PackagingTube
- Published1996
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations28
- ECCN CodeEAR99
- Resistance100Ohm
- Additional FeatureFLOATING LOAD DRIVER; UNDER VOLTAGE LOCKOUT CIRCUIT
- SubcategoryMOSFET Drivers
- Max Power Dissipation1.5W
- TechnologyCMOS
- Voltage - Supply10V~20V
- Terminal PositionDUAL
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Number of Functions1
- Supply Voltage15V
- Terminal Pitch2.54mm
- Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberIR2136PBF
- Qualification StatusNot Qualified
- Output Voltage620V
- Max Output Current350mA
- Number of Channels1
- Nominal Supply Current1.6mA
- Power Dissipation1.5W
- Output Current200mA
- Input TypeInverting
- Turn On Delay Time550 ns
- Rise Time190ns
- Fall Time (Typ)75 ns
- Turn-Off Delay Time400 ns
- Rise / Fall Time (Typ)125ns 50ns
- Channel Type3-Phase
- Number of Drivers6
- Turn On Time0.55 μs
- Output Peak Current Limit-Nom0.35A
- Driven ConfigurationHalf-Bridge
- Gate TypeIGBT, N-Channel MOSFET
- Current - Peak Output (Source, Sink)200mA 350mA
- High Side DriverYES
- Logic Voltage - VIL, VIH0.8V 3V
- Turn Off Time0.55 μs
- High Side Voltage - Max (Bootstrap)600V
- Height5.969mm
- Length39.7256mm
- Width14.73mm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeContains Lead
IR2136PBF Overview
The 28-DIP (0.600, 15.24mm) package provides greater flexibility.Gate drivers is package in Tube case.Configuration is supported by 6 drivers.Gate drivers is mounted in the way of Through Hole.Gate drivers is able to show Gate driverss superiorGate driversy on the basis of a supply voltage of 10V~20V.The gate type on this device is IGBT, N-Channel MOSFET.There is a temperature range for this device of -40°C~150°C TJ.Inverting is used as its input type.Mosfet driver is based on 28 terminations.There are numerous related parts listed under its base part number IR2136PBF.Through Hole is the way it takes to mount the device.When the device is designed, it has 28 pins.This device operates with 15V supply voltage.An output current as high as 350mA can be achieved at maximum power.There are several useful electronic components found in its subcategory of MOSFET Drivers.The high-side voltage - Max (Bootstrap) can be up to 600V.Mosfet gate drivers supports a current output of 200mA.Having the maximum power dissipation of 1.5W indicates its maximum capacity to conduct power losses without overheating.The voltage it outputs is 620V.In addition, FLOATING LOAD DRIVER; UNDER VOLTAGE LOCKOUT CIRCUIT can also be provided using a unique technology.With a resistance of 100Ohm, it operates.For operation, mosfet gate drivers has 1 channels.
IR2136PBF Features
Embedded in the Tube package
6 drivers
Employing a gate type of IGBT, N-Channel MOSFET
28 pins
High-side voltage - Max (Bootstrap) of 600V
Maximum power dissipation of 1.5W
FLOATING LOAD DRIVER; UNDER VOLTAGE LOCKOUT CIRCUIT
Resistance of 100Ohm
IR2136PBF Applications
There are a lot of Infineon Technologies IR2136PBF gate drivers applications.
48 V to 12 V PoL Converters, 48 V to Low Voltage Bus Converter,
Active Clamp Flyback or Forward and Synchronous Rectifier
Motor Control
High-voltage isolated DC-DC converters
Digitally controlled power supplies
Commercial air-conditioning (CAC)
serial peripheral interface (SPI), I2C
Motor controllers
A/D drivers
Isolated Gate Driver Supplies
The 28-DIP (0.600, 15.24mm) package provides greater flexibility.Gate drivers is package in Tube case.Configuration is supported by 6 drivers.Gate drivers is mounted in the way of Through Hole.Gate drivers is able to show Gate driverss superiorGate driversy on the basis of a supply voltage of 10V~20V.The gate type on this device is IGBT, N-Channel MOSFET.There is a temperature range for this device of -40°C~150°C TJ.Inverting is used as its input type.Mosfet driver is based on 28 terminations.There are numerous related parts listed under its base part number IR2136PBF.Through Hole is the way it takes to mount the device.When the device is designed, it has 28 pins.This device operates with 15V supply voltage.An output current as high as 350mA can be achieved at maximum power.There are several useful electronic components found in its subcategory of MOSFET Drivers.The high-side voltage - Max (Bootstrap) can be up to 600V.Mosfet gate drivers supports a current output of 200mA.Having the maximum power dissipation of 1.5W indicates its maximum capacity to conduct power losses without overheating.The voltage it outputs is 620V.In addition, FLOATING LOAD DRIVER; UNDER VOLTAGE LOCKOUT CIRCUIT can also be provided using a unique technology.With a resistance of 100Ohm, it operates.For operation, mosfet gate drivers has 1 channels.
IR2136PBF Features
Embedded in the Tube package
6 drivers
Employing a gate type of IGBT, N-Channel MOSFET
28 pins
High-side voltage - Max (Bootstrap) of 600V
Maximum power dissipation of 1.5W
FLOATING LOAD DRIVER; UNDER VOLTAGE LOCKOUT CIRCUIT
Resistance of 100Ohm
IR2136PBF Applications
There are a lot of Infineon Technologies IR2136PBF gate drivers applications.
48 V to 12 V PoL Converters, 48 V to Low Voltage Bus Converter,
Active Clamp Flyback or Forward and Synchronous Rectifier
Motor Control
High-voltage isolated DC-DC converters
Digitally controlled power supplies
Commercial air-conditioning (CAC)
serial peripheral interface (SPI), I2C
Motor controllers
A/D drivers
Isolated Gate Driver Supplies
IR2136PBF More Descriptions
IR2136 Series 600 V 200 mA 20 V Supply Six 3 Phase Bridge Driver - PDIP-28
MOSFET Driver IC; Device Type:Bridge; Supply Voltage Min:12V; Supply Voltage Max:25V; Package/Case:28-DIP; No. of Pins:28; Operating Temperature Range:-40°C to 125°C; Fall Time, tf:50ns; High Side MOSFET Drive Type:Bootstrapped ;RoHS Compliant: Yes
DRIVER, MOSFET, 3PH HIGH/LOW, 2136; Device Type:MOSFET; Module Configuration:3-Phase Bridge; Peak Output Current:350mA; Output Resistance:50ohm; Input Delay:400ns; Output Delay:380ns; Supply Voltage Range:10V to 20V; Driver Case Style:DIP; No. of Pins:28; Operating Temperature Range:-40°C to 125°C; SVHC:No SVHC (19-Dec-2011); Base Number:2136; IC Generic Number:2136; Logic Function Number:2136; No. of Outputs:6; Offset Voltage:600V; Operating Temperature Max:125°C; Operating Temperature Min:-40°C; Output Current:200mA; Output Current Max:250mA; Output Sink Current Min:250mA; Output Source Current Min:120mA; Output Voltage:620V; Output Voltage Max:20V; Output Voltage Min:10V; Package / Case:DIP; Power Dissipation Pd:1.5W; Supply Voltage Max:20V; Supply Voltage Min:10V; Termination Type:Through Hole; Voltage Vcc Max:25V; Voltage Vcc Min:12V
600 V Three Phase Driver IC with typical 0.2 A source and 0.35 A sink currents in 28 Lead PDIP package for IGBTs and MOSFETs. Also available in 44 Lead PLCC and 28 Lead SOIC. | Summary of Features: Floating channel designed for bootstrap operation; Fully operational to 600 V; Tolerant to negative transient voltage, dV/dt immune; Gate drive supply range from 10 V to 20 V; Undervoltage lockout for all channels; Over-current shutdown turns off all six drivers; Independent 3 half-bridge drivers; Matched propagation delay for all channels; Cross-conduction prevention logic; Low side output out of phase with inputs. High side outputs out of phase; 3.3 V logic compatible; Lower di/dt gate drive for better noise immunity; Externally programmable delay for automatic fault clear; Variations include IR21363
The IR2136/IR21362/IR21363/IR21365/IR21366/IR21367/IR21368(J&S) are high votage, high speed power MOSFET and IGBT drivers with three independent high and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are compatible with CMOS or LSTTL outputs, down to 3.3V logic. A current trip function which terminates all six outputs can be derived from an external current sense resistor. An enable function is available to terminate all six outputs simultaneously. An open-drain FAULT signal is provided to indicate that an over current or under voltage shutdown has occurred. Over current fault conditions are cleared automatically after a delay programmed externally via an RC network connected to the RCIN input. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive N-channel power MOSFETs or IGBTs in the high side configuration which operates up to 600 volts.
MOSFET Driver IC; Device Type:Bridge; Supply Voltage Min:12V; Supply Voltage Max:25V; Package/Case:28-DIP; No. of Pins:28; Operating Temperature Range:-40°C to 125°C; Fall Time, tf:50ns; High Side MOSFET Drive Type:Bootstrapped ;RoHS Compliant: Yes
DRIVER, MOSFET, 3PH HIGH/LOW, 2136; Device Type:MOSFET; Module Configuration:3-Phase Bridge; Peak Output Current:350mA; Output Resistance:50ohm; Input Delay:400ns; Output Delay:380ns; Supply Voltage Range:10V to 20V; Driver Case Style:DIP; No. of Pins:28; Operating Temperature Range:-40°C to 125°C; SVHC:No SVHC (19-Dec-2011); Base Number:2136; IC Generic Number:2136; Logic Function Number:2136; No. of Outputs:6; Offset Voltage:600V; Operating Temperature Max:125°C; Operating Temperature Min:-40°C; Output Current:200mA; Output Current Max:250mA; Output Sink Current Min:250mA; Output Source Current Min:120mA; Output Voltage:620V; Output Voltage Max:20V; Output Voltage Min:10V; Package / Case:DIP; Power Dissipation Pd:1.5W; Supply Voltage Max:20V; Supply Voltage Min:10V; Termination Type:Through Hole; Voltage Vcc Max:25V; Voltage Vcc Min:12V
600 V Three Phase Driver IC with typical 0.2 A source and 0.35 A sink currents in 28 Lead PDIP package for IGBTs and MOSFETs. Also available in 44 Lead PLCC and 28 Lead SOIC. | Summary of Features: Floating channel designed for bootstrap operation; Fully operational to 600 V; Tolerant to negative transient voltage, dV/dt immune; Gate drive supply range from 10 V to 20 V; Undervoltage lockout for all channels; Over-current shutdown turns off all six drivers; Independent 3 half-bridge drivers; Matched propagation delay for all channels; Cross-conduction prevention logic; Low side output out of phase with inputs. High side outputs out of phase; 3.3 V logic compatible; Lower di/dt gate drive for better noise immunity; Externally programmable delay for automatic fault clear; Variations include IR21363
The IR2136/IR21362/IR21363/IR21365/IR21366/IR21367/IR21368(J&S) are high votage, high speed power MOSFET and IGBT drivers with three independent high and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are compatible with CMOS or LSTTL outputs, down to 3.3V logic. A current trip function which terminates all six outputs can be derived from an external current sense resistor. An enable function is available to terminate all six outputs simultaneously. An open-drain FAULT signal is provided to indicate that an over current or under voltage shutdown has occurred. Over current fault conditions are cleared automatically after a delay programmed externally via an RC network connected to the RCIN input. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive N-channel power MOSFETs or IGBTs in the high side configuration which operates up to 600 volts.
The three parts on the right have similar specifications to IR2136PBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceAdditional FeatureSubcategoryMax Power DissipationTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReflow Temperature-Max (s)Base Part NumberQualification StatusOutput VoltageMax Output CurrentNumber of ChannelsNominal Supply CurrentPower DissipationOutput CurrentInput TypeTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeRise / Fall Time (Typ)Channel TypeNumber of DriversTurn On TimeOutput Peak Current Limit-NomDriven ConfigurationGate TypeCurrent - Peak Output (Source, Sink)High Side DriverLogic Voltage - VIL, VIHTurn Off TimeHigh Side Voltage - Max (Bootstrap)HeightLengthWidthREACH SVHCRoHS StatusLead FreeSurface MountTerminal FormJESD-30 CodeOutput CharacteristicsOutput PolarityInput CharacteristicsHeight Seated (Max)TerminationNumber of OutputsPower SuppliesMax Supply CurrentPropagation DelayMax Output VoltageMin Output VoltageRadiation HardeningView Compare
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IR2136PBF12 WeeksThrough HoleThrough Hole28-DIP (0.600, 15.24mm)28-40°C~150°C TJTube1996Active1 (Unlimited)28EAR99100OhmFLOATING LOAD DRIVER; UNDER VOLTAGE LOCKOUT CIRCUITMOSFET Drivers1.5WCMOS10V~20VDUALNOT SPECIFIED115V2.54mmNOT SPECIFIEDIR2136PBFNot Qualified620V350mA11.6mA1.5W200mAInverting550 ns190ns75 ns400 ns125ns 50ns3-Phase60.55 μs0.35AHalf-BridgeIGBT, N-Channel MOSFET200mA 350mAYES0.8V 3V0.55 μs600V5.969mm39.7256mm14.73mmNo SVHCROHS3 CompliantContains Lead----------------
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--Through Hole8-DIP (0.300, 7.62mm)--40°C~150°C TJTube2000Obsolete1 (Unlimited)-------10V~20V------IR2107-------Inverting----150ns 50nsIndependent2--Half-BridgeIGBT, N-Channel MOSFET200mA 350mA-0.8V 2.7V-600V----Non-RoHS Compliant----------------
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--Surface Mount8-SOIC (0.154, 3.90mm Width)--40°C~150°C TJTube1996Obsolete1 (Unlimited)8EAR99----CMOS10V~20VDUALNOT SPECIFIED115V-NOT SPECIFIEDIR2104SNot Qualified------Non-Inverting----100ns 50nsSynchronous2-0.36AHalf-BridgeIGBT, N-Channel MOSFET210mA 360mAYES0.8V 3V-600V-4.9mm3.9mm-Non-RoHS Compliant-YESGULL WINGR-PDSO-G8TOTEM-POLETRUESCHMITT TRIGGER1.75mm--------
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12 WeeksThrough HoleThrough Hole8-DIP (0.300, 7.62mm)8-40°C~150°C TJTube1996Active1 (Unlimited)8EAR99--MOSFET Drivers1WCMOS10V~20VDUAL-115V--IR2101PBF-620V360mA-270μA1W210mANon-Inverting50 ns170ns90 ns150 ns100ns 50nsIndependent--0.36AHalf-BridgeIGBT, N-Channel MOSFET210mA 360mAYES0.8V 3V-600V4.9276mm10.8966mm7.11mmNo SVHCROHS3 CompliantLead Free-------Through Hole215V270μA220 ns20V10VNo
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