Infineon Technologies IR2135PBF
- Part Number:
- IR2135PBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3737150-IR2135PBF
- Description:
- IC DRIVER BRIDGE 3-PHASE 28-DIP
- Datasheet:
- IR2135PBF
Infineon Technologies IR2135PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IR2135PBF.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / Case28-DIP (0.600, 15.24mm)
- Number of Pins28
- Operating Temperature125°C TJ
- PackagingTube
- Published2005
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Resistance100Ohm
- Max Power Dissipation1.5W
- Voltage - Supply10V~20V
- Base Part NumberIR2135PBF
- Output Voltage10V
- Max Output Current500mA
- Power Dissipation1.5W
- Output Current200mA
- Input TypeInverting
- Turn On Delay Time750 ns
- Rise Time150ns
- Fall Time (Typ)70 ns
- Turn-Off Delay Time950 ns
- Rise / Fall Time (Typ)90ns 40ns
- Channel Type3-Phase
- Number of Drivers6
- Driven ConfigurationHalf-Bridge
- Gate TypeIGBT, N-Channel MOSFET
- Current - Peak Output (Source, Sink)250mA 500mA
- Logic Voltage - VIL, VIH0.8V 2.2V
- High Side Voltage - Max (Bootstrap)600V
- Height5.969mm
- Length39.7256mm
- Width14.732mm
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
IR2135PBF Overview
The mount for this electronic component is a through hole, which allows for easy installation and secure attachment to a circuit board. The resistance of the component is 100Ohm, ensuring stable and reliable performance. The rise time, which measures the speed at which the output signal changes from low to high, is 150ns, while the rise/fall time (typical) is 90ns and 40ns respectively. This component also boasts 6 drivers, providing ample power for multiple applications. The current peak output can reach up to 250mA for sourcing and 500mA for sinking, making it suitable for a variety of high-demand tasks. With a maximum high side voltage of 600V, this component is ideal for high voltage applications. Its compact size, with a height of 5.969mm and length of 39.7256mm, allows for space-efficient integration into electronic devices. Additionally, this component is not radiation hardened.
IR2135PBF Features
Embedded in the Tube package
6 drivers
Employing a gate type of IGBT, N-Channel MOSFET
28 pins
High-side voltage - Max (Bootstrap) of 600V
Maximum power dissipation of 1.5W
Resistance of 100Ohm
IR2135PBF Applications
There are a lot of Infineon Technologies IR2135PBF gate drivers applications.
Head-up and Head mounted displays
Smart Phones
Industrial Power Supplies
Broadcast equipment
Solar power supplies
Commercial and agricultural vehicles (CAV)
Isolated Supplies for controller area network (CAN),
Motor controllers
AC-DC Inverters
LCD/LCoS/DLP portable and embedded pico projectors
The mount for this electronic component is a through hole, which allows for easy installation and secure attachment to a circuit board. The resistance of the component is 100Ohm, ensuring stable and reliable performance. The rise time, which measures the speed at which the output signal changes from low to high, is 150ns, while the rise/fall time (typical) is 90ns and 40ns respectively. This component also boasts 6 drivers, providing ample power for multiple applications. The current peak output can reach up to 250mA for sourcing and 500mA for sinking, making it suitable for a variety of high-demand tasks. With a maximum high side voltage of 600V, this component is ideal for high voltage applications. Its compact size, with a height of 5.969mm and length of 39.7256mm, allows for space-efficient integration into electronic devices. Additionally, this component is not radiation hardened.
IR2135PBF Features
Embedded in the Tube package
6 drivers
Employing a gate type of IGBT, N-Channel MOSFET
28 pins
High-side voltage - Max (Bootstrap) of 600V
Maximum power dissipation of 1.5W
Resistance of 100Ohm
IR2135PBF Applications
There are a lot of Infineon Technologies IR2135PBF gate drivers applications.
Head-up and Head mounted displays
Smart Phones
Industrial Power Supplies
Broadcast equipment
Solar power supplies
Commercial and agricultural vehicles (CAV)
Isolated Supplies for controller area network (CAN),
Motor controllers
AC-DC Inverters
LCD/LCoS/DLP portable and embedded pico projectors
IR2135PBF More Descriptions
Tube IR2135PBF Half-Bridge 2005 gate driver 150ns 125C TJ 250mA 500mA 1.5W
MOSFET DRVR 600V 0.5A 6-OUT Hi/Lo Side 3-Phase Brdg Inv 28-Pin PDIP Tube
MOSFET Driver IC; Device Type:Bridge; No. of Outputs:6; Output Voltage:620V; Output Current:500mA; Power Dissipation, Pd:1.5W; Supply Voltage Min:12V; Supply Voltage Max:25V; Termination Type:Through Hole; Package/Case:28-DIP ;RoHS Compliant: Yes
IC, DRIVER 3PH HIGH/LOW SIDE, 2135; Driver Configuration: Half Bridge; Peak Output Current: 500mA; Supply Voltage Min: 10V; Supply Voltage Max: 20V; Driver Case Style: DIP; No. of Pins: 28Pins; Input Delay: 750ns; Output Delay: 700ns; Operating Temperature Min: -40°C; Operating Temperature Max: 125°C; MSL: -; SVHC: No SVHC (27-Jun-2018); Base Number: 2135; Device Type: Bridge; IC Generic Number: 2135; Logic Function Number: 2135; Logic IC Function: 3 Phase Bridge Driver; Module Configuration: Half Bridge; Offset Voltage: 600V; Operating Temperature Range: -40°C to 125°C; Output Resistance: 70ohm; Output Sink Current Min: 420mA; Output Source Current Min: 200mA; Supply Voltage Range: 10V to 20V; Voltage Vcc Max: 25V; Voltage Vcc Min: 12V
MOSFET DRVR 600V 0.5A 6-OUT Hi/Lo Side 3-Phase Brdg Inv 28-Pin PDIP Tube
MOSFET Driver IC; Device Type:Bridge; No. of Outputs:6; Output Voltage:620V; Output Current:500mA; Power Dissipation, Pd:1.5W; Supply Voltage Min:12V; Supply Voltage Max:25V; Termination Type:Through Hole; Package/Case:28-DIP ;RoHS Compliant: Yes
IC, DRIVER 3PH HIGH/LOW SIDE, 2135; Driver Configuration: Half Bridge; Peak Output Current: 500mA; Supply Voltage Min: 10V; Supply Voltage Max: 20V; Driver Case Style: DIP; No. of Pins: 28Pins; Input Delay: 750ns; Output Delay: 700ns; Operating Temperature Min: -40°C; Operating Temperature Max: 125°C; MSL: -; SVHC: No SVHC (27-Jun-2018); Base Number: 2135; Device Type: Bridge; IC Generic Number: 2135; Logic Function Number: 2135; Logic IC Function: 3 Phase Bridge Driver; Module Configuration: Half Bridge; Offset Voltage: 600V; Operating Temperature Range: -40°C to 125°C; Output Resistance: 70ohm; Output Sink Current Min: 420mA; Output Source Current Min: 200mA; Supply Voltage Range: 10V to 20V; Voltage Vcc Max: 25V; Voltage Vcc Min: 12V
The three parts on the right have similar specifications to IR2135PBF.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ResistanceMax Power DissipationVoltage - SupplyBase Part NumberOutput VoltageMax Output CurrentPower DissipationOutput CurrentInput TypeTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeRise / Fall Time (Typ)Channel TypeNumber of DriversDriven ConfigurationGate TypeCurrent - Peak Output (Source, Sink)Logic Voltage - VIL, VIHHigh Side Voltage - Max (Bootstrap)HeightLengthWidthRadiation HardeningRoHS StatusSurface MountNumber of TerminationsECCN CodeTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageReflow Temperature-Max (s)JESD-30 CodeQualification StatusOutput CharacteristicsOutput PolarityInput CharacteristicsOutput Peak Current Limit-NomHigh Side DriverHeight Seated (Max)Factory Lead TimeTerminationSubcategoryNumber of OutputsPower SuppliesNominal Supply CurrentMax Supply CurrentPropagation DelayMax Output VoltageMin Output VoltageREACH SVHCLead FreeView Compare
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IR2135PBFThrough HoleThrough Hole28-DIP (0.600, 15.24mm)28125°C TJTube2005Obsolete1 (Unlimited)100Ohm1.5W10V~20VIR2135PBF10V500mA1.5W200mAInverting750 ns150ns70 ns950 ns90ns 40ns3-Phase6Half-BridgeIGBT, N-Channel MOSFET250mA 500mA0.8V 2.2V600V5.969mm39.7256mm14.732mmNoRoHS Compliant-------------------------------
-
-Through Hole8-DIP (0.300, 7.62mm)--40°C~150°C TJTube2000Obsolete1 (Unlimited)--10V~20VIR2107----Inverting----150ns 50nsIndependent2Half-BridgeIGBT, N-Channel MOSFET200mA 350mA0.8V 2.7V600V----Non-RoHS Compliant------------------------------
-
-Surface Mount8-SOIC (0.154, 3.90mm Width)--40°C~150°C TJTube1996Obsolete1 (Unlimited)--10V~20VIR2104S----Non-Inverting----100ns 50nsSynchronous2Half-BridgeIGBT, N-Channel MOSFET210mA 360mA0.8V 3V600V-4.9mm3.9mm-Non-RoHS CompliantYES8EAR99CMOSDUALGULL WINGNOT SPECIFIED115VNOT SPECIFIEDR-PDSO-G8Not QualifiedTOTEM-POLETRUESCHMITT TRIGGER0.36AYES1.75mm------------
-
Through HoleThrough Hole8-DIP (0.300, 7.62mm)8-40°C~150°C TJTube1996Active1 (Unlimited)-1W10V~20VIR2101PBF620V360mA1W210mANon-Inverting50 ns170ns90 ns150 ns100ns 50nsIndependent-Half-BridgeIGBT, N-Channel MOSFET210mA 360mA0.8V 3V600V4.9276mm10.8966mm7.11mmNoROHS3 Compliant-8EAR99CMOSDUAL--115V------0.36AYES-12 WeeksThrough HoleMOSFET Drivers215V270μA270μA220 ns20V10VNo SVHCLead Free
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