Infineon Technologies IR2133SPBF
- Part Number:
- IR2133SPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3253998-IR2133SPBF
- Description:
- IC DRIVER BRIDGE 3PHASE 28SOIC
- Datasheet:
- IR2133SPBF
Infineon Technologies IR2133SPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IR2133SPBF.
- Factory Lead Time12 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case28-SOIC (0.295, 7.50mm Width)
- Number of Pins28
- Operating Temperature125°C TJ
- PackagingTube
- Published1996
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations28
- ECCN CodeEAR99
- Resistance100Ohm
- Terminal FinishMatte Tin (Sn)
- HTS Code8542.39.00.01
- SubcategoryMOSFET Drivers
- Max Power Dissipation1.6W
- TechnologyCMOS
- Voltage - Supply10V~20V
- Terminal PositionDUAL
- Terminal FormGULL WING
- Number of Functions3
- Supply Voltage15V
- Terminal Pitch1.27mm
- Base Part NumberIR2133SPBF
- Output Voltage10V
- Max Output Current500mA
- Power Supplies15V
- Nominal Supply Current100μA
- Power Dissipation1.6W
- Output Current250mA
- Input TypeInverting
- Turn On Delay Time750 ns
- Rise Time150ns
- Fall Time (Typ)70 ns
- Turn-Off Delay Time950 ns
- Rise / Fall Time (Typ)90ns 40ns
- Channel Type3-Phase
- Number of Drivers6
- Turn On Time1 μs
- Output Peak Current Limit-Nom0.5A
- Driven ConfigurationHalf-Bridge
- Gate TypeIGBT, N-Channel MOSFET
- Current - Peak Output (Source, Sink)250mA 500mA
- High Side DriverYES
- Logic Voltage - VIL, VIH0.8V 2.2V
- Turn Off Time0.95 μs
- High Side Voltage - Max (Bootstrap)600V
- Height2.35mm
- Length18.0848mm
- Width7.5946mm
- Radiation HardeningNo
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeContains Lead, Lead Free
IR2133SPBF Overview
The specific component in question is manufactured by Infineon Technologies and falls under the category of PMIC - Gate Drivers. It was first released in 1996 and utilizes CMOS technology. The voltage supply for this chip ranges from 10V to 20V, and its terminal position is dual. The power supplies required for optimal operation are 15V. In terms of performance, the turn on delay time for this chip is 750 nanoseconds, while the turn-off delay time is 950 nanoseconds. It is equipped with a total of six drivers. Additionally, it features a high side driver and has a maximum high side voltage of 600V, utilizing the bootstrap method.
IR2133SPBF Features
Embedded in the Tube package
6 drivers
Employing a gate type of IGBT, N-Channel MOSFET
28 pins
High-side voltage - Max (Bootstrap) of 600V
Maximum power dissipation of 1.6W
Resistance of 100Ohm
IR2133SPBF Applications
There are a lot of Infineon Technologies IR2133SPBF gate drivers applications.
Automotive Applications
General Purpose 3-Phase Inverter
Telecom switch mode power supplies
Active filtering
High power buffers
Commercial and agricultural vehicles (CAV)
Welding
Smart Phones
Dual-Battery Systems
Refrigerator
The specific component in question is manufactured by Infineon Technologies and falls under the category of PMIC - Gate Drivers. It was first released in 1996 and utilizes CMOS technology. The voltage supply for this chip ranges from 10V to 20V, and its terminal position is dual. The power supplies required for optimal operation are 15V. In terms of performance, the turn on delay time for this chip is 750 nanoseconds, while the turn-off delay time is 950 nanoseconds. It is equipped with a total of six drivers. Additionally, it features a high side driver and has a maximum high side voltage of 600V, utilizing the bootstrap method.
IR2133SPBF Features
Embedded in the Tube package
6 drivers
Employing a gate type of IGBT, N-Channel MOSFET
28 pins
High-side voltage - Max (Bootstrap) of 600V
Maximum power dissipation of 1.6W
Resistance of 100Ohm
IR2133SPBF Applications
There are a lot of Infineon Technologies IR2133SPBF gate drivers applications.
Automotive Applications
General Purpose 3-Phase Inverter
Telecom switch mode power supplies
Active filtering
High power buffers
Commercial and agricultural vehicles (CAV)
Welding
Smart Phones
Dual-Battery Systems
Refrigerator
IR2133SPBF More Descriptions
Driver 600V 0.5A 6-OUT High and Low Side 3-Phase Brdg Inv 28-Pin SOIC W T/R
Tube IR2133SPBF Half-Bridge 1996 gate driver 150ns 125C TJ 250mA 500mA 1.6W
IR2133 Series 20 V 250 mA Surface Mount 3-Phase Bridge Driver - SOIC-28
600 V three-phase gate driver IC with shutdown, fault reporting, OPAMP and over current protection, SOIC 28W, RoHSInfineon SCT
3 PHASE DRIVER, SEPARATE HIGH AND LOW SIDE INPUTS, 200NS DEADTIME IN A 28-LEAD S
DRIVER, MOSFET, 3PH HIGH/LOW, 2133; Device Type:MOSFET; Module Configuration:3-Phase Bridge; Peak Output Current:500mA; Output Resistance:70ohm; Input Delay:750ns; Output Delay:700ns; Supply Voltage Range:10V to 20V; Driver Case Style:SOIC; No. of Pins:28; Operating Temperature Range:-40°C to 125°C; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2011); Base Number:2133; IC Generic Number:2133; Logic Function Number:2133; No. of Outputs:6; Offset Voltage:600V; Operating Temperature Max:125°C; Operating Temperature Min:-40°C; Output Current:250mA; Output Current Max:420mA; Output Sink Current Min:420mA; Output Source Current Min:200mA; Output Voltage:620V; Output Voltage Max:20V; Output Voltage Min:10V; Package / Case:SOIC; Power Dissipation Pd:1.6W; Supply Voltage Max:20V; Supply Voltage Min:10V; Termination Type:SMD; Turn Off Time:700ns; Turn On Time:750ns; Voltage Vcc Max:25V; Voltage Vcc Min:10V
600 V Three Phase Driver IC with typical 0.25 A source and 0.5 A sink currents in 28 Lead SOICWB package for IGBTs and MOSFETs. Also available in 28 Lead PDIP and 44 Lead PLCC. | Summary of Features: Floating channel designed for bootstrap operation; Fully operational to 600 V; Fully operational to 1200 V (IR2233; dV/dt immune; Gate drive supply range from 10 V/12 V to 20 V DC and up to 25 V for transient; Undervoltage lockout for all channels; Over-current shutdown turns off all six drivers; Independent 3 half-bridge drivers; Matched propagation delay for all channels; 2.5 V logic compatible; Outputs out of phase with inputs
Tube IR2133SPBF Half-Bridge 1996 gate driver 150ns 125C TJ 250mA 500mA 1.6W
IR2133 Series 20 V 250 mA Surface Mount 3-Phase Bridge Driver - SOIC-28
600 V three-phase gate driver IC with shutdown, fault reporting, OPAMP and over current protection, SOIC 28W, RoHSInfineon SCT
3 PHASE DRIVER, SEPARATE HIGH AND LOW SIDE INPUTS, 200NS DEADTIME IN A 28-LEAD S
DRIVER, MOSFET, 3PH HIGH/LOW, 2133; Device Type:MOSFET; Module Configuration:3-Phase Bridge; Peak Output Current:500mA; Output Resistance:70ohm; Input Delay:750ns; Output Delay:700ns; Supply Voltage Range:10V to 20V; Driver Case Style:SOIC; No. of Pins:28; Operating Temperature Range:-40°C to 125°C; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2011); Base Number:2133; IC Generic Number:2133; Logic Function Number:2133; No. of Outputs:6; Offset Voltage:600V; Operating Temperature Max:125°C; Operating Temperature Min:-40°C; Output Current:250mA; Output Current Max:420mA; Output Sink Current Min:420mA; Output Source Current Min:200mA; Output Voltage:620V; Output Voltage Max:20V; Output Voltage Min:10V; Package / Case:SOIC; Power Dissipation Pd:1.6W; Supply Voltage Max:20V; Supply Voltage Min:10V; Termination Type:SMD; Turn Off Time:700ns; Turn On Time:750ns; Voltage Vcc Max:25V; Voltage Vcc Min:10V
600 V Three Phase Driver IC with typical 0.25 A source and 0.5 A sink currents in 28 Lead SOICWB package for IGBTs and MOSFETs. Also available in 28 Lead PDIP and 44 Lead PLCC. | Summary of Features: Floating channel designed for bootstrap operation; Fully operational to 600 V; Fully operational to 1200 V (IR2233; dV/dt immune; Gate drive supply range from 10 V/12 V to 20 V DC and up to 25 V for transient; Undervoltage lockout for all channels; Over-current shutdown turns off all six drivers; Independent 3 half-bridge drivers; Matched propagation delay for all channels; 2.5 V logic compatible; Outputs out of phase with inputs
The three parts on the right have similar specifications to IR2133SPBF.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishHTS CodeSubcategoryMax Power DissipationTechnologyVoltage - SupplyTerminal PositionTerminal FormNumber of FunctionsSupply VoltageTerminal PitchBase Part NumberOutput VoltageMax Output CurrentPower SuppliesNominal Supply CurrentPower DissipationOutput CurrentInput TypeTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeRise / Fall Time (Typ)Channel TypeNumber of DriversTurn On TimeOutput Peak Current Limit-NomDriven ConfigurationGate TypeCurrent - Peak Output (Source, Sink)High Side DriverLogic Voltage - VIL, VIHTurn Off TimeHigh Side Voltage - Max (Bootstrap)HeightLengthWidthRadiation HardeningREACH SVHCRoHS StatusLead FreeSupplier Device PackageTerminationNumber of OutputsMax Supply CurrentPropagation DelayMax Output VoltageMin Output VoltageView Compare
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IR2133SPBF12 WeeksSurface MountSurface Mount28-SOIC (0.295, 7.50mm Width)28125°C TJTube1996e3Active3 (168 Hours)28EAR99100OhmMatte Tin (Sn)8542.39.00.01MOSFET Drivers1.6WCMOS10V~20VDUALGULL WING315V1.27mmIR2133SPBF10V500mA15V100μA1.6W250mAInverting750 ns150ns70 ns950 ns90ns 40ns3-Phase61 μs0.5AHalf-BridgeIGBT, N-Channel MOSFET250mA 500mAYES0.8V 2.2V0.95 μs600V2.35mm18.0848mm7.5946mmNoNo SVHCROHS3 CompliantContains Lead, Lead Free--------
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--Through Hole8-DIP (0.300, 7.62mm)--40°C~150°C TJTube2000-Obsolete1 (Unlimited)--------10V~20V-----IR2107------Inverting----150ns 50nsIndependent2--Half-BridgeIGBT, N-Channel MOSFET200mA 350mA-0.8V 2.7V-600V-----Non-RoHS Compliant--------
-
--Surface Mount14-SOIC (0.154, 3.90mm Width)--40°C~150°C TJTube2000-Obsolete1 (Unlimited)--------10V~20V-----IR21074S------Inverting----150ns 50nsIndependent2--Half-BridgeIGBT, N-Channel MOSFET200mA 350mA-0.8V 2.7V-600V-----Non-RoHS Compliant-14-SOIC------
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12 WeeksThrough HoleThrough Hole8-DIP (0.300, 7.62mm)8-40°C~150°C TJTube1996-Active1 (Unlimited)8EAR99---MOSFET Drivers1WCMOS10V~20VDUAL-115V-IR2101PBF620V360mA15V270μA1W210mANon-Inverting50 ns170ns90 ns150 ns100ns 50nsIndependent--0.36AHalf-BridgeIGBT, N-Channel MOSFET210mA 360mAYES0.8V 3V-600V4.9276mm10.8966mm7.11mmNoNo SVHCROHS3 CompliantLead Free-Through Hole2270μA220 ns20V10V
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