Infineon Technologies IR2130PBF
- Part Number:
- IR2130PBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3735175-IR2130PBF
- Description:
- IC DRIVER BRIDGE 3-PHASE 28-DIP
- Datasheet:
- IR2130PBF
Infineon Technologies IR2130PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IR2130PBF.
- Factory Lead Time18 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / Case28-DIP (0.600, 15.24mm)
- Number of Pins28
- Operating Temperature-40°C~150°C TJ
- PackagingTube
- Published1996
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations28
- ECCN CodeEAR99
- Resistance75Ohm
- SubcategoryMOSFET Drivers
- Max Power Dissipation1.5W
- TechnologyMOS
- Voltage - Supply10V~20V
- Terminal PositionDUAL
- Number of Functions1
- Supply Voltage15V
- Terminal Pitch2.54mm
- Base Part NumberIR2130PBF
- Number of Outputs3
- Output Voltage300mV
- Max Output Current500mA
- Operating Supply Voltage15V
- Nominal Supply Current30μA
- Power Dissipation1.5W
- Output Current200mA
- Propagation Delay850 ns
- Input TypeInverting
- Turn On Delay Time850 ps
- Rise Time125ns
- Fall Time (Typ)55 ns
- Turn-Off Delay Time425 ns
- Rise / Fall Time (Typ)80ns 35ns
- Channel Type3-Phase
- Number of Drivers6
- Turn On Time0.85 μs
- Output Peak Current Limit-Nom0.5A
- Driven ConfigurationHalf-Bridge
- Gate TypeIGBT, N-Channel MOSFET
- Current - Peak Output (Source, Sink)250mA 500mA
- High Side DriverYES
- Logic Voltage - VIL, VIH0.8V 2.2V
- Turn Off Time0.55 μs
- High Side Voltage - Max (Bootstrap)600V
- Height5.969mm
- Length39.7256mm
- Width14.73mm
- Radiation HardeningNo
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeContains Lead
IR2130PBF Overview
There is greater flexibility with the 28-DIP (0.600, 15.24mm) package.Gate drivers is package in Tube case.Configuration is based on 6 drivers.Ideally, it should be mounted in the direction of Through Hole.When the supply voltage is set to 10V~20V, it can demonstrate its superiority.Gate drivers is designed wGate driversh a IGBT, N-Channel MOSFET gate.Temperature range -40°C~150°C TJ is allowed for this device.Mosfet driver accepts input of type Inverting.28 terminations constitute its foundation.Mosfet driver is possible to find various related parts under Mosfet drivers base part number IR2130PBF.In this case, Through Hole indicates how the device is mounted.There are 28 pins available in the device.The device is specifically designed to operate at 15V volts.500mA is the maximum output current.The subcategory of MOSFET Drivers contains a wide variety of useful electronic components.Max (Bootstrap) can be as high as 600V.For its basis, 3 outputs are integrated.Mosfet driver supports an output current of 200mA.1.5W dissipates maximum power without overheating, showing its maximum capability to transfer and conduct power loss.As a result, a voltage of 300mV is produced.Setting the operating supply voltage to 15V is recommended.Device operation requires a resistance of 75Ohm.
IR2130PBF Features
Embedded in the Tube package
6 drivers
Employing a gate type of IGBT, N-Channel MOSFET
28 pins
High-side voltage - Max (Bootstrap) of 600V
Maximum power dissipation of 1.5W
Resistance of 75Ohm
IR2130PBF Applications
There are a lot of Infineon Technologies IR2130PBF gate drivers applications.
AC-DC Inverters
Video amplifiers
Isolated switch mode power supplies (SMPS)
Isolated Gate Driver Supplies
High current laser/LED systems
High-voltage isolated DC-DC converters
General Purpose 3-Phase Inverter
Industrial Power Supplies
High frequency line drivers
High power buffers
There is greater flexibility with the 28-DIP (0.600, 15.24mm) package.Gate drivers is package in Tube case.Configuration is based on 6 drivers.Ideally, it should be mounted in the direction of Through Hole.When the supply voltage is set to 10V~20V, it can demonstrate its superiority.Gate drivers is designed wGate driversh a IGBT, N-Channel MOSFET gate.Temperature range -40°C~150°C TJ is allowed for this device.Mosfet driver accepts input of type Inverting.28 terminations constitute its foundation.Mosfet driver is possible to find various related parts under Mosfet drivers base part number IR2130PBF.In this case, Through Hole indicates how the device is mounted.There are 28 pins available in the device.The device is specifically designed to operate at 15V volts.500mA is the maximum output current.The subcategory of MOSFET Drivers contains a wide variety of useful electronic components.Max (Bootstrap) can be as high as 600V.For its basis, 3 outputs are integrated.Mosfet driver supports an output current of 200mA.1.5W dissipates maximum power without overheating, showing its maximum capability to transfer and conduct power loss.As a result, a voltage of 300mV is produced.Setting the operating supply voltage to 15V is recommended.Device operation requires a resistance of 75Ohm.
IR2130PBF Features
Embedded in the Tube package
6 drivers
Employing a gate type of IGBT, N-Channel MOSFET
28 pins
High-side voltage - Max (Bootstrap) of 600V
Maximum power dissipation of 1.5W
Resistance of 75Ohm
IR2130PBF Applications
There are a lot of Infineon Technologies IR2130PBF gate drivers applications.
AC-DC Inverters
Video amplifiers
Isolated switch mode power supplies (SMPS)
Isolated Gate Driver Supplies
High current laser/LED systems
High-voltage isolated DC-DC converters
General Purpose 3-Phase Inverter
Industrial Power Supplies
High frequency line drivers
High power buffers
IR2130PBF More Descriptions
3 PHASE DRIVER, INVERTING INPUT, 2.5US DEADTIME IN A 28-PIN DIP PACKAGE | Infineon IR2130PBF
Tube IR2130PBF Half-Bridge 1996 gate driver 125ns -40C~150C TJ 250mA 500mA 1.5W
Driver 600V 0.5A 6-OUT High and Low Side 3-Phase Brdg Inv 28-Pin PDIP T/R
IR2130 Series 600 V 200 mA 20 V Supply Triple 3 Phase Bridge Driver - PDIP-28
600 V three-phase gate driver IC with over current protection, OPAMP and fault reporting, PDIP28, RoHSInfineon SCT
Gate Driver IC, Half-Bridge, PDIP-28, IR2130PBF
No. of Channels:6Channels; Driver Configuration:Half Bridge; Power Switch Type:IGBT, MOSFET; No. of Pins:28Pins; Driver Case Style:DIP; Input Type:Inverting; Source Current:250mA; Sink Current:500mA; Supply Voltage Min:10V; MSL:- RoHS Compliant: Yes
600 V Three Phase Driver IC with typical 0.25 A source and 0.5 A sink currents in 28 Lead PDIP package for IGBTs and MOSFETs. Also available in 44 Lead PLCC and 28 Lead SOIC WB | Summary of Features: Floating channel designed for bootstrap operation; Fully operational to 600 V; Tolerant to negative transient voltage; dV/dt immune; Gate drive supply range from 10 to 20 V; Undervoltage lockout for all channels; Typical deadtime 2.5 s (IR2130); Typical deadtime 0.8 s (IR2132 ) option available; Over-current shutdown turns off all six drivers; Independent half-bridge drivers; Matched propagation delay for all channels; 2.5 V logic compatible; Outputs out of phase with inputs; Cross-conduction prevention logic
Tube IR2130PBF Half-Bridge 1996 gate driver 125ns -40C~150C TJ 250mA 500mA 1.5W
Driver 600V 0.5A 6-OUT High and Low Side 3-Phase Brdg Inv 28-Pin PDIP T/R
IR2130 Series 600 V 200 mA 20 V Supply Triple 3 Phase Bridge Driver - PDIP-28
600 V three-phase gate driver IC with over current protection, OPAMP and fault reporting, PDIP28, RoHSInfineon SCT
Gate Driver IC, Half-Bridge, PDIP-28, IR2130PBF
No. of Channels:6Channels; Driver Configuration:Half Bridge; Power Switch Type:IGBT, MOSFET; No. of Pins:28Pins; Driver Case Style:DIP; Input Type:Inverting; Source Current:250mA; Sink Current:500mA; Supply Voltage Min:10V; MSL:- RoHS Compliant: Yes
600 V Three Phase Driver IC with typical 0.25 A source and 0.5 A sink currents in 28 Lead PDIP package for IGBTs and MOSFETs. Also available in 44 Lead PLCC and 28 Lead SOIC WB | Summary of Features: Floating channel designed for bootstrap operation; Fully operational to 600 V; Tolerant to negative transient voltage; dV/dt immune; Gate drive supply range from 10 to 20 V; Undervoltage lockout for all channels; Typical deadtime 2.5 s (IR2130); Typical deadtime 0.8 s (IR2132 ) option available; Over-current shutdown turns off all six drivers; Independent half-bridge drivers; Matched propagation delay for all channels; 2.5 V logic compatible; Outputs out of phase with inputs; Cross-conduction prevention logic
The three parts on the right have similar specifications to IR2130PBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceSubcategoryMax Power DissipationTechnologyVoltage - SupplyTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchBase Part NumberNumber of OutputsOutput VoltageMax Output CurrentOperating Supply VoltageNominal Supply CurrentPower DissipationOutput CurrentPropagation DelayInput TypeTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeRise / Fall Time (Typ)Channel TypeNumber of DriversTurn On TimeOutput Peak Current Limit-NomDriven ConfigurationGate TypeCurrent - Peak Output (Source, Sink)High Side DriverLogic Voltage - VIL, VIHTurn Off TimeHigh Side Voltage - Max (Bootstrap)HeightLengthWidthRadiation HardeningREACH SVHCRoHS StatusLead FreeSurface MountTerminal FormPeak Reflow Temperature (Cel)Reflow Temperature-Max (s)JESD-30 CodeQualification StatusOutput CharacteristicsOutput PolarityInput CharacteristicsHeight Seated (Max)View Compare
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IR2130PBF18 WeeksThrough HoleThrough Hole28-DIP (0.600, 15.24mm)28-40°C~150°C TJTube1996Active1 (Unlimited)28EAR9975OhmMOSFET Drivers1.5WMOS10V~20VDUAL115V2.54mmIR2130PBF3300mV500mA15V30μA1.5W200mA850 nsInverting850 ps125ns55 ns425 ns80ns 35ns3-Phase60.85 μs0.5AHalf-BridgeIGBT, N-Channel MOSFET250mA 500mAYES0.8V 2.2V0.55 μs600V5.969mm39.7256mm14.73mmNoNo SVHCROHS3 CompliantContains Lead-----------
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--Surface Mount8-SOIC (0.154, 3.90mm Width)--40°C~150°C TJTube1996Obsolete1 (Unlimited)8EAR99---CMOS10V~20VDUAL115V-IR2102S--------Inverting----100ns 50nsIndependent2-0.36AHalf-BridgeIGBT, N-Channel MOSFET210mA 360mAYES0.8V 3V-600V-4.9mm3.9mm--Non-RoHS Compliant-YESGULL WINGNOT SPECIFIEDNOT SPECIFIEDR-PDSO-G8Not QualifiedTOTEM-POLEINVERTEDSCHMITT TRIGGER1.75mm
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--Through Hole8-DIP (0.300, 7.62mm)--40°C~150°C TJTube2000Obsolete1 (Unlimited)------10V~20V----IR2107--------Inverting----150ns 50nsIndependent2--Half-BridgeIGBT, N-Channel MOSFET200mA 350mA-0.8V 2.7V-600V-----Non-RoHS Compliant-----------
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--Surface Mount8-SOIC (0.154, 3.90mm Width)--40°C~150°C TJTube1996Obsolete1 (Unlimited)8EAR99---CMOS10V~20VDUAL115V-IR2104S--------Non-Inverting----100ns 50nsSynchronous2-0.36AHalf-BridgeIGBT, N-Channel MOSFET210mA 360mAYES0.8V 3V-600V-4.9mm3.9mm--Non-RoHS Compliant-YESGULL WINGNOT SPECIFIEDNOT SPECIFIEDR-PDSO-G8Not QualifiedTOTEM-POLETRUESCHMITT TRIGGER1.75mm
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