IR2130PBF

Infineon Technologies IR2130PBF

Part Number:
IR2130PBF
Manufacturer:
Infineon Technologies
Ventron No:
3735175-IR2130PBF
Description:
IC DRIVER BRIDGE 3-PHASE 28-DIP
ECAD Model:
Datasheet:
IR2130PBF

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Specifications
Infineon Technologies IR2130PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IR2130PBF.
  • Factory Lead Time
    18 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    28-DIP (0.600, 15.24mm)
  • Number of Pins
    28
  • Operating Temperature
    -40°C~150°C TJ
  • Packaging
    Tube
  • Published
    1996
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    28
  • ECCN Code
    EAR99
  • Resistance
    75Ohm
  • Subcategory
    MOSFET Drivers
  • Max Power Dissipation
    1.5W
  • Technology
    MOS
  • Voltage - Supply
    10V~20V
  • Terminal Position
    DUAL
  • Number of Functions
    1
  • Supply Voltage
    15V
  • Terminal Pitch
    2.54mm
  • Base Part Number
    IR2130PBF
  • Number of Outputs
    3
  • Output Voltage
    300mV
  • Max Output Current
    500mA
  • Operating Supply Voltage
    15V
  • Nominal Supply Current
    30μA
  • Power Dissipation
    1.5W
  • Output Current
    200mA
  • Propagation Delay
    850 ns
  • Input Type
    Inverting
  • Turn On Delay Time
    850 ps
  • Rise Time
    125ns
  • Fall Time (Typ)
    55 ns
  • Turn-Off Delay Time
    425 ns
  • Rise / Fall Time (Typ)
    80ns 35ns
  • Channel Type
    3-Phase
  • Number of Drivers
    6
  • Turn On Time
    0.85 μs
  • Output Peak Current Limit-Nom
    0.5A
  • Driven Configuration
    Half-Bridge
  • Gate Type
    IGBT, N-Channel MOSFET
  • Current - Peak Output (Source, Sink)
    250mA 500mA
  • High Side Driver
    YES
  • Logic Voltage - VIL, VIH
    0.8V 2.2V
  • Turn Off Time
    0.55 μs
  • High Side Voltage - Max (Bootstrap)
    600V
  • Height
    5.969mm
  • Length
    39.7256mm
  • Width
    14.73mm
  • Radiation Hardening
    No
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Contains Lead
Description
IR2130PBF Overview
There is greater flexibility with the 28-DIP (0.600, 15.24mm) package.Gate drivers is package in Tube case.Configuration is based on 6 drivers.Ideally, it should be mounted in the direction of Through Hole.When the supply voltage is set to 10V~20V, it can demonstrate its superiority.Gate drivers is designed wGate driversh a IGBT, N-Channel MOSFET gate.Temperature range -40°C~150°C TJ is allowed for this device.Mosfet driver accepts input of type Inverting.28 terminations constitute its foundation.Mosfet driver is possible to find various related parts under Mosfet drivers base part number IR2130PBF.In this case, Through Hole indicates how the device is mounted.There are 28 pins available in the device.The device is specifically designed to operate at 15V volts.500mA is the maximum output current.The subcategory of MOSFET Drivers contains a wide variety of useful electronic components.Max (Bootstrap) can be as high as 600V.For its basis, 3 outputs are integrated.Mosfet driver supports an output current of 200mA.1.5W dissipates maximum power without overheating, showing its maximum capability to transfer and conduct power loss.As a result, a voltage of 300mV is produced.Setting the operating supply voltage to 15V is recommended.Device operation requires a resistance of 75Ohm.

IR2130PBF Features
Embedded in the Tube package
6 drivers
Employing a gate type of IGBT, N-Channel MOSFET
28 pins
High-side voltage - Max (Bootstrap) of 600V
Maximum power dissipation of 1.5W
Resistance of 75Ohm

IR2130PBF Applications
There are a lot of Infineon Technologies IR2130PBF gate drivers applications.

AC-DC Inverters
Video amplifiers
Isolated switch mode power supplies (SMPS)
Isolated Gate Driver Supplies
High current laser/LED systems
High-voltage isolated DC-DC converters
General Purpose 3-Phase Inverter
Industrial Power Supplies
High frequency line drivers
High power buffers
IR2130PBF More Descriptions
3 PHASE DRIVER, INVERTING INPUT, 2.5US DEADTIME IN A 28-PIN DIP PACKAGE | Infineon IR2130PBF
Tube IR2130PBF Half-Bridge 1996 gate driver 125ns -40C~150C TJ 250mA 500mA 1.5W
Driver 600V 0.5A 6-OUT High and Low Side 3-Phase Brdg Inv 28-Pin PDIP T/R
IR2130 Series 600 V 200 mA 20 V Supply Triple 3 Phase Bridge Driver - PDIP-28
600 V three-phase gate driver IC with over current protection, OPAMP and fault reporting, PDIP28, RoHSInfineon SCT
Gate Driver IC, Half-Bridge, PDIP-28, IR2130PBF
No. of Channels:6Channels; Driver Configuration:Half Bridge; Power Switch Type:IGBT, MOSFET; No. of Pins:28Pins; Driver Case Style:DIP; Input Type:Inverting; Source Current:250mA; Sink Current:500mA; Supply Voltage Min:10V; MSL:- RoHS Compliant: Yes
600 V Three Phase Driver IC with typical 0.25 A source and 0.5 A sink currents in 28 Lead PDIP package for IGBTs and MOSFETs. Also available in 44 Lead PLCC and 28 Lead SOIC WB | Summary of Features: Floating channel designed for bootstrap operation; Fully operational to 600 V; Tolerant to negative transient voltage; dV/dt immune; Gate drive supply range from 10 to 20 V; Undervoltage lockout for all channels; Typical deadtime 2.5 s (IR2130); Typical deadtime 0.8 s (IR2132 ) option available; Over-current shutdown turns off all six drivers; Independent half-bridge drivers; Matched propagation delay for all channels; 2.5 V logic compatible; Outputs out of phase with inputs; Cross-conduction prevention logic
Product Comparison
The three parts on the right have similar specifications to IR2130PBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Subcategory
    Max Power Dissipation
    Technology
    Voltage - Supply
    Terminal Position
    Number of Functions
    Supply Voltage
    Terminal Pitch
    Base Part Number
    Number of Outputs
    Output Voltage
    Max Output Current
    Operating Supply Voltage
    Nominal Supply Current
    Power Dissipation
    Output Current
    Propagation Delay
    Input Type
    Turn On Delay Time
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Rise / Fall Time (Typ)
    Channel Type
    Number of Drivers
    Turn On Time
    Output Peak Current Limit-Nom
    Driven Configuration
    Gate Type
    Current - Peak Output (Source, Sink)
    High Side Driver
    Logic Voltage - VIL, VIH
    Turn Off Time
    High Side Voltage - Max (Bootstrap)
    Height
    Length
    Width
    Radiation Hardening
    REACH SVHC
    RoHS Status
    Lead Free
    Surface Mount
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Output Characteristics
    Output Polarity
    Input Characteristics
    Height Seated (Max)
    View Compare
  • IR2130PBF
    IR2130PBF
    18 Weeks
    Through Hole
    Through Hole
    28-DIP (0.600, 15.24mm)
    28
    -40°C~150°C TJ
    Tube
    1996
    Active
    1 (Unlimited)
    28
    EAR99
    75Ohm
    MOSFET Drivers
    1.5W
    MOS
    10V~20V
    DUAL
    1
    15V
    2.54mm
    IR2130PBF
    3
    300mV
    500mA
    15V
    30μA
    1.5W
    200mA
    850 ns
    Inverting
    850 ps
    125ns
    55 ns
    425 ns
    80ns 35ns
    3-Phase
    6
    0.85 μs
    0.5A
    Half-Bridge
    IGBT, N-Channel MOSFET
    250mA 500mA
    YES
    0.8V 2.2V
    0.55 μs
    600V
    5.969mm
    39.7256mm
    14.73mm
    No
    No SVHC
    ROHS3 Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IR2102S
    -
    -
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    -40°C~150°C TJ
    Tube
    1996
    Obsolete
    1 (Unlimited)
    8
    EAR99
    -
    -
    -
    CMOS
    10V~20V
    DUAL
    1
    15V
    -
    IR2102S
    -
    -
    -
    -
    -
    -
    -
    -
    Inverting
    -
    -
    -
    -
    100ns 50ns
    Independent
    2
    -
    0.36A
    Half-Bridge
    IGBT, N-Channel MOSFET
    210mA 360mA
    YES
    0.8V 3V
    -
    600V
    -
    4.9mm
    3.9mm
    -
    -
    Non-RoHS Compliant
    -
    YES
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    R-PDSO-G8
    Not Qualified
    TOTEM-POLE
    INVERTED
    SCHMITT TRIGGER
    1.75mm
  • IR2107
    -
    -
    Through Hole
    8-DIP (0.300, 7.62mm)
    -
    -40°C~150°C TJ
    Tube
    2000
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    10V~20V
    -
    -
    -
    -
    IR2107
    -
    -
    -
    -
    -
    -
    -
    -
    Inverting
    -
    -
    -
    -
    150ns 50ns
    Independent
    2
    -
    -
    Half-Bridge
    IGBT, N-Channel MOSFET
    200mA 350mA
    -
    0.8V 2.7V
    -
    600V
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IR2104S
    -
    -
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    -40°C~150°C TJ
    Tube
    1996
    Obsolete
    1 (Unlimited)
    8
    EAR99
    -
    -
    -
    CMOS
    10V~20V
    DUAL
    1
    15V
    -
    IR2104S
    -
    -
    -
    -
    -
    -
    -
    -
    Non-Inverting
    -
    -
    -
    -
    100ns 50ns
    Synchronous
    2
    -
    0.36A
    Half-Bridge
    IGBT, N-Channel MOSFET
    210mA 360mA
    YES
    0.8V 3V
    -
    600V
    -
    4.9mm
    3.9mm
    -
    -
    Non-RoHS Compliant
    -
    YES
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    R-PDSO-G8
    Not Qualified
    TOTEM-POLE
    TRUE
    SCHMITT TRIGGER
    1.75mm
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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