IR2127SPBF

Infineon Technologies IR2127SPBF

Part Number:
IR2127SPBF
Manufacturer:
Infineon Technologies
Ventron No:
3254601-IR2127SPBF
Description:
IC MOSFET DRVR CURR SENSE 8SOIC
ECAD Model:
Datasheet:
IR2127SPBF

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Specifications
Infineon Technologies IR2127SPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IR2127SPBF.
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Operating Temperature
    -40°C~150°C TJ
  • Packaging
    Tube
  • Published
    1996
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    2 (1 Year)
  • Number of Terminations
    8
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Resistance
    125Ohm
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    MOSFET Drivers
  • Max Power Dissipation
    625mW
  • Technology
    CMOS
  • Voltage - Supply
    12V~20V
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Number of Functions
    1
  • Supply Voltage
    15V
  • Base Part Number
    IR2127SPBF
  • Number of Outputs
    1
  • Output Voltage
    10V
  • Max Output Current
    500mA
  • Operating Supply Voltage
    15V
  • Nominal Supply Current
    120μA
  • Power Dissipation
    625mW
  • Output Current
    200mA
  • Propagation Delay
    250 ns
  • Input Type
    Non-Inverting
  • Turn On Delay Time
    250 ns
  • Max Output Voltage
    20V
  • Rise Time
    130ns
  • Fall Time (Typ)
    65 ns
  • Turn-Off Delay Time
    200 ns
  • Min Output Voltage
    12V
  • Release Time
    150 ns
  • Rise / Fall Time (Typ)
    80ns 40ns
  • Interface IC Type
    BUFFER OR INVERTER BASED MOSFET DRIVER
  • Channel Type
    Single
  • Turn On Time
    0.25 μs
  • Output Peak Current Limit-Nom
    0.5A
  • Driven Configuration
    High-Side or Low-Side
  • Gate Type
    IGBT, N-Channel MOSFET
  • Current - Peak Output (Source, Sink)
    250mA 500mA
  • High Side Driver
    YES
  • Logic Voltage - VIL, VIH
    0.8V 3V
  • Turn Off Time
    0.2 μs
  • High Side Voltage - Max (Bootstrap)
    600V
  • Height
    1.4986mm
  • Length
    4.9784mm
  • Width
    3.9878mm
  • Radiation Hardening
    No
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Contains Lead, Lead Free
Description
IR2127SPBF Overview
The 8-SOIC (0.154, 3.90mm Width) package provides greater flexibility.A packaging method of Tube is indicated.Its recommended mounting way is Surface Mount.When the supply voltage is 12V~20V it is able to demonstrate its superiority.This gate type has a IGBT, N-Channel MOSFET design.This device is allowed to operate in a temperature range of -40°C~150°C TJ.A type of Non-Inverting is used for input in this program.It's configured with 8 terminations.There are various related parts under its base part number IR2127SPBF.Surface Mount is the way it takes to mount the device.The pins are configured with 8 when designing the chip.Mosfet driver is designed specifically to run on 15V volts of power.Mosfet driver employs an interface chip called BUFFER OR INVERTER BASED MOSFET DRIVER as Mosfet drivers interface chip.Mosfet driver is possible for the output current to be as low as 500mA.There are several useful electronic components found in its subcategory of MOSFET Drivers.High-side voltage - Max (Bootstrap) can be as low as 600V.The basis has 1 integrated outputs.An output current of 200mA is supported.Using 625mW as an example, the maximum power dissipation shows how well it is able to transfer and conduct power loss without becoming overheated.In this case, it produces a voltage of 10V.A voltage of 15V should be set for the operating supply voltage.Mosfet gate drivers operates wMosfet gate driversh a resistance of 125Ohm.Mosfet driver ic is recommended to keep the maximum output voltage at 20V.

IR2127SPBF Features
Embedded in the Tube package
Employing a gate type of IGBT, N-Channel MOSFET
8 pins
High-side voltage - Max (Bootstrap) of 600V
Maximum power dissipation of 625mW
Resistance of 125Ohm

IR2127SPBF Applications
There are a lot of Infineon Technologies IR2127SPBF gate drivers applications.

Video amplifiers
Industrial Power Supplies
Solar power supplies
RGB applications
Topologies
Digitally controlled power supplies
Automotive Applications
White Goods - Air Conditioner, Washing Machine,
Power factor correction (PFC) circuits
AC-DC Inverters
IR2127SPBF More Descriptions
IR2127 Series Single 20 V 500 mA Surface Mount High or Low Side Driver - SOIC-8
600 V single high-side gate driver IC with over current protection and fault reporting, SOIC 8N, RoHSInfineon SCT
Single High Side Driver, Noninverting Inputs, Current Sensing, Overcurent Detection and Shutdown Fault Output in a 8-Lead package
600 V High Side Driver IC with typical 0.25 A source and 0.5 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PDIP. | Summary of Features: Floating channel designed for bootstrap operation; Fully operational to 600 V; Tolerant to negative transient voltage dV/dt immune; Application - specific gate drive range: 12 to 20 V (IR2127, IR2128 Output out of phase with input (IR2128 )
Product Comparison
The three parts on the right have similar specifications to IR2127SPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Max Power Dissipation
    Technology
    Voltage - Supply
    Terminal Position
    Terminal Form
    Number of Functions
    Supply Voltage
    Base Part Number
    Number of Outputs
    Output Voltage
    Max Output Current
    Operating Supply Voltage
    Nominal Supply Current
    Power Dissipation
    Output Current
    Propagation Delay
    Input Type
    Turn On Delay Time
    Max Output Voltage
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Min Output Voltage
    Release Time
    Rise / Fall Time (Typ)
    Interface IC Type
    Channel Type
    Turn On Time
    Output Peak Current Limit-Nom
    Driven Configuration
    Gate Type
    Current - Peak Output (Source, Sink)
    High Side Driver
    Logic Voltage - VIL, VIH
    Turn Off Time
    High Side Voltage - Max (Bootstrap)
    Height
    Length
    Width
    Radiation Hardening
    REACH SVHC
    RoHS Status
    Lead Free
    Surface Mount
    Peak Reflow Temperature (Cel)
    Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Output Characteristics
    Output Polarity
    Input Characteristics
    Number of Drivers
    Height Seated (Max)
    Power Supplies
    Max Supply Current
    View Compare
  • IR2127SPBF
    IR2127SPBF
    12 Weeks
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    -40°C~150°C TJ
    Tube
    1996
    e3
    Active
    2 (1 Year)
    8
    SMD/SMT
    EAR99
    125Ohm
    Matte Tin (Sn)
    MOSFET Drivers
    625mW
    CMOS
    12V~20V
    DUAL
    GULL WING
    1
    15V
    IR2127SPBF
    1
    10V
    500mA
    15V
    120μA
    625mW
    200mA
    250 ns
    Non-Inverting
    250 ns
    20V
    130ns
    65 ns
    200 ns
    12V
    150 ns
    80ns 40ns
    BUFFER OR INVERTER BASED MOSFET DRIVER
    Single
    0.25 μs
    0.5A
    High-Side or Low-Side
    IGBT, N-Channel MOSFET
    250mA 500mA
    YES
    0.8V 3V
    0.2 μs
    600V
    1.4986mm
    4.9784mm
    3.9878mm
    No
    No SVHC
    ROHS3 Compliant
    Contains Lead, Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IR2102S
    -
    -
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    -40°C~150°C TJ
    Tube
    1996
    -
    Obsolete
    1 (Unlimited)
    8
    -
    EAR99
    -
    -
    -
    -
    CMOS
    10V~20V
    DUAL
    GULL WING
    1
    15V
    IR2102S
    -
    -
    -
    -
    -
    -
    -
    -
    Inverting
    -
    -
    -
    -
    -
    -
    -
    100ns 50ns
    -
    Independent
    -
    0.36A
    Half-Bridge
    IGBT, N-Channel MOSFET
    210mA 360mA
    YES
    0.8V 3V
    -
    600V
    -
    4.9mm
    3.9mm
    -
    -
    Non-RoHS Compliant
    -
    YES
    NOT SPECIFIED
    NOT SPECIFIED
    R-PDSO-G8
    Not Qualified
    TOTEM-POLE
    INVERTED
    SCHMITT TRIGGER
    2
    1.75mm
    -
    -
  • IR2107
    -
    -
    Through Hole
    8-DIP (0.300, 7.62mm)
    -
    -40°C~150°C TJ
    Tube
    2000
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    10V~20V
    -
    -
    -
    -
    IR2107
    -
    -
    -
    -
    -
    -
    -
    -
    Inverting
    -
    -
    -
    -
    -
    -
    -
    150ns 50ns
    -
    Independent
    -
    -
    Half-Bridge
    IGBT, N-Channel MOSFET
    200mA 350mA
    -
    0.8V 2.7V
    -
    600V
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    2
    -
    -
    -
  • IR2101PBF
    12 Weeks
    Through Hole
    Through Hole
    8-DIP (0.300, 7.62mm)
    8
    -40°C~150°C TJ
    Tube
    1996
    -
    Active
    1 (Unlimited)
    8
    Through Hole
    EAR99
    -
    -
    MOSFET Drivers
    1W
    CMOS
    10V~20V
    DUAL
    -
    1
    15V
    IR2101PBF
    2
    620V
    360mA
    -
    270μA
    1W
    210mA
    220 ns
    Non-Inverting
    50 ns
    20V
    170ns
    90 ns
    150 ns
    10V
    -
    100ns 50ns
    -
    Independent
    -
    0.36A
    Half-Bridge
    IGBT, N-Channel MOSFET
    210mA 360mA
    YES
    0.8V 3V
    -
    600V
    4.9276mm
    10.8966mm
    7.11mm
    No
    No SVHC
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    15V
    270μA
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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