Infineon Technologies IR2127SPBF
- Part Number:
- IR2127SPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3254601-IR2127SPBF
- Description:
- IC MOSFET DRVR CURR SENSE 8SOIC
- Datasheet:
- IR2127SPBF
Infineon Technologies IR2127SPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IR2127SPBF.
- Factory Lead Time12 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Operating Temperature-40°C~150°C TJ
- PackagingTube
- Published1996
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)2 (1 Year)
- Number of Terminations8
- TerminationSMD/SMT
- ECCN CodeEAR99
- Resistance125Ohm
- Terminal FinishMatte Tin (Sn)
- SubcategoryMOSFET Drivers
- Max Power Dissipation625mW
- TechnologyCMOS
- Voltage - Supply12V~20V
- Terminal PositionDUAL
- Terminal FormGULL WING
- Number of Functions1
- Supply Voltage15V
- Base Part NumberIR2127SPBF
- Number of Outputs1
- Output Voltage10V
- Max Output Current500mA
- Operating Supply Voltage15V
- Nominal Supply Current120μA
- Power Dissipation625mW
- Output Current200mA
- Propagation Delay250 ns
- Input TypeNon-Inverting
- Turn On Delay Time250 ns
- Max Output Voltage20V
- Rise Time130ns
- Fall Time (Typ)65 ns
- Turn-Off Delay Time200 ns
- Min Output Voltage12V
- Release Time150 ns
- Rise / Fall Time (Typ)80ns 40ns
- Interface IC TypeBUFFER OR INVERTER BASED MOSFET DRIVER
- Channel TypeSingle
- Turn On Time0.25 μs
- Output Peak Current Limit-Nom0.5A
- Driven ConfigurationHigh-Side or Low-Side
- Gate TypeIGBT, N-Channel MOSFET
- Current - Peak Output (Source, Sink)250mA 500mA
- High Side DriverYES
- Logic Voltage - VIL, VIH0.8V 3V
- Turn Off Time0.2 μs
- High Side Voltage - Max (Bootstrap)600V
- Height1.4986mm
- Length4.9784mm
- Width3.9878mm
- Radiation HardeningNo
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeContains Lead, Lead Free
IR2127SPBF Overview
The 8-SOIC (0.154, 3.90mm Width) package provides greater flexibility.A packaging method of Tube is indicated.Its recommended mounting way is Surface Mount.When the supply voltage is 12V~20V it is able to demonstrate its superiority.This gate type has a IGBT, N-Channel MOSFET design.This device is allowed to operate in a temperature range of -40°C~150°C TJ.A type of Non-Inverting is used for input in this program.It's configured with 8 terminations.There are various related parts under its base part number IR2127SPBF.Surface Mount is the way it takes to mount the device.The pins are configured with 8 when designing the chip.Mosfet driver is designed specifically to run on 15V volts of power.Mosfet driver employs an interface chip called BUFFER OR INVERTER BASED MOSFET DRIVER as Mosfet drivers interface chip.Mosfet driver is possible for the output current to be as low as 500mA.There are several useful electronic components found in its subcategory of MOSFET Drivers.High-side voltage - Max (Bootstrap) can be as low as 600V.The basis has 1 integrated outputs.An output current of 200mA is supported.Using 625mW as an example, the maximum power dissipation shows how well it is able to transfer and conduct power loss without becoming overheated.In this case, it produces a voltage of 10V.A voltage of 15V should be set for the operating supply voltage.Mosfet gate drivers operates wMosfet gate driversh a resistance of 125Ohm.Mosfet driver ic is recommended to keep the maximum output voltage at 20V.
IR2127SPBF Features
Embedded in the Tube package
Employing a gate type of IGBT, N-Channel MOSFET
8 pins
High-side voltage - Max (Bootstrap) of 600V
Maximum power dissipation of 625mW
Resistance of 125Ohm
IR2127SPBF Applications
There are a lot of Infineon Technologies IR2127SPBF gate drivers applications.
Video amplifiers
Industrial Power Supplies
Solar power supplies
RGB applications
Topologies
Digitally controlled power supplies
Automotive Applications
White Goods - Air Conditioner, Washing Machine,
Power factor correction (PFC) circuits
AC-DC Inverters
The 8-SOIC (0.154, 3.90mm Width) package provides greater flexibility.A packaging method of Tube is indicated.Its recommended mounting way is Surface Mount.When the supply voltage is 12V~20V it is able to demonstrate its superiority.This gate type has a IGBT, N-Channel MOSFET design.This device is allowed to operate in a temperature range of -40°C~150°C TJ.A type of Non-Inverting is used for input in this program.It's configured with 8 terminations.There are various related parts under its base part number IR2127SPBF.Surface Mount is the way it takes to mount the device.The pins are configured with 8 when designing the chip.Mosfet driver is designed specifically to run on 15V volts of power.Mosfet driver employs an interface chip called BUFFER OR INVERTER BASED MOSFET DRIVER as Mosfet drivers interface chip.Mosfet driver is possible for the output current to be as low as 500mA.There are several useful electronic components found in its subcategory of MOSFET Drivers.High-side voltage - Max (Bootstrap) can be as low as 600V.The basis has 1 integrated outputs.An output current of 200mA is supported.Using 625mW as an example, the maximum power dissipation shows how well it is able to transfer and conduct power loss without becoming overheated.In this case, it produces a voltage of 10V.A voltage of 15V should be set for the operating supply voltage.Mosfet gate drivers operates wMosfet gate driversh a resistance of 125Ohm.Mosfet driver ic is recommended to keep the maximum output voltage at 20V.
IR2127SPBF Features
Embedded in the Tube package
Employing a gate type of IGBT, N-Channel MOSFET
8 pins
High-side voltage - Max (Bootstrap) of 600V
Maximum power dissipation of 625mW
Resistance of 125Ohm
IR2127SPBF Applications
There are a lot of Infineon Technologies IR2127SPBF gate drivers applications.
Video amplifiers
Industrial Power Supplies
Solar power supplies
RGB applications
Topologies
Digitally controlled power supplies
Automotive Applications
White Goods - Air Conditioner, Washing Machine,
Power factor correction (PFC) circuits
AC-DC Inverters
IR2127SPBF More Descriptions
IR2127 Series Single 20 V 500 mA Surface Mount High or Low Side Driver - SOIC-8
600 V single high-side gate driver IC with over current protection and fault reporting, SOIC 8N, RoHSInfineon SCT
Single High Side Driver, Noninverting Inputs, Current Sensing, Overcurent Detection and Shutdown Fault Output in a 8-Lead package
600 V High Side Driver IC with typical 0.25 A source and 0.5 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PDIP. | Summary of Features: Floating channel designed for bootstrap operation; Fully operational to 600 V; Tolerant to negative transient voltage dV/dt immune; Application - specific gate drive range: 12 to 20 V (IR2127, IR2128 Output out of phase with input (IR2128 )
600 V single high-side gate driver IC with over current protection and fault reporting, SOIC 8N, RoHSInfineon SCT
Single High Side Driver, Noninverting Inputs, Current Sensing, Overcurent Detection and Shutdown Fault Output in a 8-Lead package
600 V High Side Driver IC with typical 0.25 A source and 0.5 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PDIP. | Summary of Features: Floating channel designed for bootstrap operation; Fully operational to 600 V; Tolerant to negative transient voltage dV/dt immune; Application - specific gate drive range: 12 to 20 V (IR2127, IR2128 Output out of phase with input (IR2128 )
The three parts on the right have similar specifications to IR2127SPBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeResistanceTerminal FinishSubcategoryMax Power DissipationTechnologyVoltage - SupplyTerminal PositionTerminal FormNumber of FunctionsSupply VoltageBase Part NumberNumber of OutputsOutput VoltageMax Output CurrentOperating Supply VoltageNominal Supply CurrentPower DissipationOutput CurrentPropagation DelayInput TypeTurn On Delay TimeMax Output VoltageRise TimeFall Time (Typ)Turn-Off Delay TimeMin Output VoltageRelease TimeRise / Fall Time (Typ)Interface IC TypeChannel TypeTurn On TimeOutput Peak Current Limit-NomDriven ConfigurationGate TypeCurrent - Peak Output (Source, Sink)High Side DriverLogic Voltage - VIL, VIHTurn Off TimeHigh Side Voltage - Max (Bootstrap)HeightLengthWidthRadiation HardeningREACH SVHCRoHS StatusLead FreeSurface MountPeak Reflow Temperature (Cel)Reflow Temperature-Max (s)JESD-30 CodeQualification StatusOutput CharacteristicsOutput PolarityInput CharacteristicsNumber of DriversHeight Seated (Max)Power SuppliesMax Supply CurrentView Compare
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IR2127SPBF12 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8-40°C~150°C TJTube1996e3Active2 (1 Year)8SMD/SMTEAR99125OhmMatte Tin (Sn)MOSFET Drivers625mWCMOS12V~20VDUALGULL WING115VIR2127SPBF110V500mA15V120μA625mW200mA250 nsNon-Inverting250 ns20V130ns65 ns200 ns12V150 ns80ns 40nsBUFFER OR INVERTER BASED MOSFET DRIVERSingle0.25 μs0.5AHigh-Side or Low-SideIGBT, N-Channel MOSFET250mA 500mAYES0.8V 3V0.2 μs600V1.4986mm4.9784mm3.9878mmNoNo SVHCROHS3 CompliantContains Lead, Lead Free-------------
-
--Surface Mount8-SOIC (0.154, 3.90mm Width)--40°C~150°C TJTube1996-Obsolete1 (Unlimited)8-EAR99----CMOS10V~20VDUALGULL WING115VIR2102S--------Inverting-------100ns 50ns-Independent-0.36AHalf-BridgeIGBT, N-Channel MOSFET210mA 360mAYES0.8V 3V-600V-4.9mm3.9mm--Non-RoHS Compliant-YESNOT SPECIFIEDNOT SPECIFIEDR-PDSO-G8Not QualifiedTOTEM-POLEINVERTEDSCHMITT TRIGGER21.75mm--
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--Through Hole8-DIP (0.300, 7.62mm)--40°C~150°C TJTube2000-Obsolete1 (Unlimited)--------10V~20V----IR2107--------Inverting-------150ns 50ns-Independent--Half-BridgeIGBT, N-Channel MOSFET200mA 350mA-0.8V 2.7V-600V-----Non-RoHS Compliant---------2---
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12 WeeksThrough HoleThrough Hole8-DIP (0.300, 7.62mm)8-40°C~150°C TJTube1996-Active1 (Unlimited)8Through HoleEAR99--MOSFET Drivers1WCMOS10V~20VDUAL-115VIR2101PBF2620V360mA-270μA1W210mA220 nsNon-Inverting50 ns20V170ns90 ns150 ns10V-100ns 50ns-Independent-0.36AHalf-BridgeIGBT, N-Channel MOSFET210mA 360mAYES0.8V 3V-600V4.9276mm10.8966mm7.11mmNoNo SVHCROHS3 CompliantLead Free----------15V270μA
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