Infineon Technologies IR21271PBF
- Part Number:
- IR21271PBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3837897-IR21271PBF
- Description:
- IC DRIVER 600V 200/420MA 8-DIP
- Datasheet:
- IR21271PBF
Infineon Technologies IR21271PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IR21271PBF.
- Factory Lead Time12 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / Case8-DIP (0.300, 7.62mm)
- Number of Pins8
- Operating Temperature-40°C~150°C TJ
- PackagingTube
- Published1996
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- TerminationSMD/SMT
- ECCN CodeEAR99
- Resistance125Ohm
- SubcategoryMOSFET Drivers
- Max Power Dissipation1W
- TechnologyCMOS
- Voltage - Supply9V~20V
- Terminal PositionDUAL
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Number of Functions1
- Supply Voltage15V
- Terminal Pitch2.54mm
- Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberIR21271PBF
- Number of Outputs1
- Qualification StatusNot Qualified
- Output Voltage20V
- Max Output Current500mA
- Operating Supply Voltage18V
- Nominal Supply Current120μA
- Power Dissipation1W
- Output Current200mA
- Propagation Delay250 ns
- Input TypeNon-Inverting
- Turn On Delay Time250 ns
- Max Output Voltage20V
- Rise Time130ns
- Fall Time (Typ)65 ns
- Turn-Off Delay Time200 ns
- Min Output Voltage9V
- Rise / Fall Time (Typ)80ns 40ns
- Interface IC TypeBUFFER OR INVERTER BASED MOSFET DRIVER
- Channel TypeSingle
- Turn On Time0.25 μs
- Output Peak Current Limit-Nom0.5A
- Driven ConfigurationHigh-Side or Low-Side
- Gate TypeIGBT, N-Channel MOSFET
- Current - Peak Output (Source, Sink)250mA 500mA
- High Side DriverYES
- Logic Voltage - VIL, VIH0.8V 3V
- Turn Off Time0.2 μs
- High Side Voltage - Max (Bootstrap)600V
- Height4.9276mm
- Length10.8966mm
- Width7.11mm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IR21271PBF Overview
This particular component is manufactured by Infineon Technologies and falls under the category of PMIC - Gate Drivers. It is an 8-pin chip with a Moisture Sensitivity Level of 1 (Unlimited). The Peak Reflow Temperature and Reflow Temperature-Max are not specified. The output voltage of this chip is 20V, with a minimum output voltage of 9V. The nominal output peak current limit is 0.5A. The logic voltage for VIL and VIH is 0.8V and 3V, respectively. The maximum high side voltage for the Bootstrap is 600V. The length of this chip is 10.8966mm.
IR21271PBF Features
Embedded in the Tube package
Employing a gate type of IGBT, N-Channel MOSFET
8 pins
High-side voltage - Max (Bootstrap) of 600V
Maximum power dissipation of 1W
Resistance of 125Ohm
IR21271PBF Applications
There are a lot of Infineon Technologies IR21271PBF gate drivers applications.
Broadcast equipment
Portable Navigation Devices
AC-DC Inverters
High-speed communications
High frequency line drivers
RGB applications
Motor Drives
Solar inverters
Commercial air-conditioning (CAC)
High-voltage isolated DC-DC converters
This particular component is manufactured by Infineon Technologies and falls under the category of PMIC - Gate Drivers. It is an 8-pin chip with a Moisture Sensitivity Level of 1 (Unlimited). The Peak Reflow Temperature and Reflow Temperature-Max are not specified. The output voltage of this chip is 20V, with a minimum output voltage of 9V. The nominal output peak current limit is 0.5A. The logic voltage for VIL and VIH is 0.8V and 3V, respectively. The maximum high side voltage for the Bootstrap is 600V. The length of this chip is 10.8966mm.
IR21271PBF Features
Embedded in the Tube package
Employing a gate type of IGBT, N-Channel MOSFET
8 pins
High-side voltage - Max (Bootstrap) of 600V
Maximum power dissipation of 1W
Resistance of 125Ohm
IR21271PBF Applications
There are a lot of Infineon Technologies IR21271PBF gate drivers applications.
Broadcast equipment
Portable Navigation Devices
AC-DC Inverters
High-speed communications
High frequency line drivers
RGB applications
Motor Drives
Solar inverters
Commercial air-conditioning (CAC)
High-voltage isolated DC-DC converters
IR21271PBF More Descriptions
Tube IR21271PBF High-Side or Low-Side 1996 gate driver 130ns -40C~150C TJ 250mA 500mA 1W
600 V single high-side gate driver IC with over current protection and fault reporting, PDIP8, RoHSInfineon SCT
Driver 600V 0.5A 1-OUT Hi Side Non-Inv Automotive 8-Pin PDIP Tube
Through Hole Tube Obsolete EAR99 Gate Drivers ICs Non-Inverting 1 600V V 8-DIP (0.300, 7.62mm) IR21271 High-Side or Low-Side
Single High Side Driver, Noninverting Inputs, Current Sensing, Overcurent Detection and Shutdown Fault Output in a 8-Lead package
MOSFET Driver IC; Device Type:High-Side; No. of Outputs:1; Output Voltage:620V; Output Current:200mA; Power Dissipation, Pd:1W; Supply Voltage Min:10V; Supply Voltage Max:25V; Termination Type:Through Hole; Package/Case:8-PDIP ;RoHS Compliant: Yes
600 V High Side Driver IC with typical 0.25 A source and 0.5 A sink currents in 8 Lead PDIP package for IGBTs and MOSFETs. Also available in 8 Lead SOIC. | Summary of Features: Floating channel designed for bootstrap operation; Fully operational to 600 V; Tolerant to negative transient voltage dV/dt immune; Application - specific gate drive range: 9 to 20 V (IR21271) and 12 to 20 V (IR2127 Output out of phase with input (IR2128 )
DRIVER, SINGLE, HIGH SIDE, 21271-8; Device Type:MOSFET; Module Configuration:High Side; Peak Output Current:500mA; Output Resistance:125ohm; Input Delay:200ns; Output Delay:150ns; Supply Voltage Range:10V to 20V; Driver Case Style:DIP; No. of Pins:8; Operating Temperature Range:-40°C to 125°C; SVHC:No SVHC (15-Dec-2010); Base Number:21271; IC Generic Number:21271; Logic Function Number:21271; No. of Outputs:1; Offset Voltage:600V; Operating Temperature Max:125°C; Operating Temperature Min:-40°C; Output Current:200mA; Output Sink Current:500mA; Output Sink Current Min:420mA; Output Source Current Max:250mA; Output Source Current Min:200mA; Output Voltage:620V; Output Voltage Max:20V; Output Voltage Min:9V; Package / Case:PDIP-8; Supply Voltage Max:20V; Supply Voltage Min:10V; Termination Type:SMD; Turn Off Time:150ns; Turn On Time:200ns; Voltage Vcc Max:25V; Voltage Vcc Min:10V
600 V single high-side gate driver IC with over current protection and fault reporting, PDIP8, RoHSInfineon SCT
Driver 600V 0.5A 1-OUT Hi Side Non-Inv Automotive 8-Pin PDIP Tube
Through Hole Tube Obsolete EAR99 Gate Drivers ICs Non-Inverting 1 600V V 8-DIP (0.300, 7.62mm) IR21271 High-Side or Low-Side
Single High Side Driver, Noninverting Inputs, Current Sensing, Overcurent Detection and Shutdown Fault Output in a 8-Lead package
MOSFET Driver IC; Device Type:High-Side; No. of Outputs:1; Output Voltage:620V; Output Current:200mA; Power Dissipation, Pd:1W; Supply Voltage Min:10V; Supply Voltage Max:25V; Termination Type:Through Hole; Package/Case:8-PDIP ;RoHS Compliant: Yes
600 V High Side Driver IC with typical 0.25 A source and 0.5 A sink currents in 8 Lead PDIP package for IGBTs and MOSFETs. Also available in 8 Lead SOIC. | Summary of Features: Floating channel designed for bootstrap operation; Fully operational to 600 V; Tolerant to negative transient voltage dV/dt immune; Application - specific gate drive range: 9 to 20 V (IR21271) and 12 to 20 V (IR2127 Output out of phase with input (IR2128 )
DRIVER, SINGLE, HIGH SIDE, 21271-8; Device Type:MOSFET; Module Configuration:High Side; Peak Output Current:500mA; Output Resistance:125ohm; Input Delay:200ns; Output Delay:150ns; Supply Voltage Range:10V to 20V; Driver Case Style:DIP; No. of Pins:8; Operating Temperature Range:-40°C to 125°C; SVHC:No SVHC (15-Dec-2010); Base Number:21271; IC Generic Number:21271; Logic Function Number:21271; No. of Outputs:1; Offset Voltage:600V; Operating Temperature Max:125°C; Operating Temperature Min:-40°C; Output Current:200mA; Output Sink Current:500mA; Output Sink Current Min:420mA; Output Source Current Max:250mA; Output Source Current Min:200mA; Output Voltage:620V; Output Voltage Max:20V; Output Voltage Min:9V; Package / Case:PDIP-8; Supply Voltage Max:20V; Supply Voltage Min:10V; Termination Type:SMD; Turn Off Time:150ns; Turn On Time:200ns; Voltage Vcc Max:25V; Voltage Vcc Min:10V
The three parts on the right have similar specifications to IR21271PBF.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeResistanceSubcategoryMax Power DissipationTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReflow Temperature-Max (s)Base Part NumberNumber of OutputsQualification StatusOutput VoltageMax Output CurrentOperating Supply VoltageNominal Supply CurrentPower DissipationOutput CurrentPropagation DelayInput TypeTurn On Delay TimeMax Output VoltageRise TimeFall Time (Typ)Turn-Off Delay TimeMin Output VoltageRise / Fall Time (Typ)Interface IC TypeChannel TypeTurn On TimeOutput Peak Current Limit-NomDriven ConfigurationGate TypeCurrent - Peak Output (Source, Sink)High Side DriverLogic Voltage - VIL, VIHTurn Off TimeHigh Side Voltage - Max (Bootstrap)HeightLengthWidthREACH SVHCRoHS StatusLead FreeSurface MountTerminal FormJESD-30 CodeOutput CharacteristicsOutput PolarityInput CharacteristicsNumber of DriversHeight Seated (Max)Power SuppliesMax Supply CurrentRadiation HardeningView Compare
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IR21271PBF12 WeeksThrough HoleThrough Hole8-DIP (0.300, 7.62mm)8-40°C~150°C TJTube1996Active1 (Unlimited)8SMD/SMTEAR99125OhmMOSFET Drivers1WCMOS9V~20VDUALNOT SPECIFIED115V2.54mmNOT SPECIFIEDIR21271PBF1Not Qualified20V500mA18V120μA1W200mA250 nsNon-Inverting250 ns20V130ns65 ns200 ns9V80ns 40nsBUFFER OR INVERTER BASED MOSFET DRIVERSingle0.25 μs0.5AHigh-Side or Low-SideIGBT, N-Channel MOSFET250mA 500mAYES0.8V 3V0.2 μs600V4.9276mm10.8966mm7.11mmNo SVHCROHS3 CompliantLead Free------------
-
--Surface Mount8-SOIC (0.154, 3.90mm Width)--40°C~150°C TJTube1996Obsolete1 (Unlimited)8-EAR99---CMOS10V~20VDUALNOT SPECIFIED115V-NOT SPECIFIEDIR2102S-Not Qualified-------Inverting------100ns 50ns-Independent-0.36AHalf-BridgeIGBT, N-Channel MOSFET210mA 360mAYES0.8V 3V-600V-4.9mm3.9mm-Non-RoHS Compliant-YESGULL WINGR-PDSO-G8TOTEM-POLEINVERTEDSCHMITT TRIGGER21.75mm---
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--Through Hole8-DIP (0.300, 7.62mm)--40°C~150°C TJTube2000Obsolete1 (Unlimited)-------10V~20V------IR2107---------Inverting------150ns 50ns-Independent--Half-BridgeIGBT, N-Channel MOSFET200mA 350mA-0.8V 2.7V-600V----Non-RoHS Compliant-------2----
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12 WeeksThrough HoleThrough Hole8-DIP (0.300, 7.62mm)8-40°C~150°C TJTube1996Active1 (Unlimited)8Through HoleEAR99-MOSFET Drivers1WCMOS10V~20VDUAL-115V--IR2101PBF2-620V360mA-270μA1W210mA220 nsNon-Inverting50 ns20V170ns90 ns150 ns10V100ns 50ns-Independent-0.36AHalf-BridgeIGBT, N-Channel MOSFET210mA 360mAYES0.8V 3V-600V4.9276mm10.8966mm7.11mmNo SVHCROHS3 CompliantLead Free--------15V270μANo
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