Infineon Technologies IR2117
- Part Number:
- IR2117
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3737326-IR2117
- Description:
- IC MOSFET DRIVER SGL-CH 8-DIP
- Datasheet:
- IR2117
Infineon Technologies IR2117 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IR2117.
- Mounting TypeThrough Hole
- Package / Case8-DIP (0.300, 7.62mm)
- Surface MountNO
- Operating Temperature-40°C~150°C TJ
- PackagingTube
- Published1996
- JESD-609 Codee0
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- TechnologyCMOS
- Voltage - Supply10V~20V
- Terminal PositionDUAL
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Number of Functions1
- Supply Voltage15V
- Terminal Pitch2.54mm
- Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberIR2117
- JESD-30 CodeR-PDIP-T8
- Qualification StatusNot Qualified
- Input TypeNon-Inverting
- Rise / Fall Time (Typ)80ns 40ns
- Interface IC TypeBUFFER OR INVERTER BASED MOSFET DRIVER
- Channel TypeSingle
- Number of Drivers1
- Turn On Time0.2 μs
- Output Peak Current Limit-Nom0.5A
- Driven ConfigurationHigh-Side
- Gate TypeIGBT, N-Channel MOSFET
- Current - Peak Output (Source, Sink)250mA 500mA
- High Side DriverYES
- Logic Voltage - VIL, VIH6V 9.5V
- High Side Voltage - Max (Bootstrap)600V
- Height Seated (Max)5.33mm
- Length9.88mm
- Width7.62mm
- RoHS StatusNon-RoHS Compliant
IR2117 Description
The device was published in 1996 and has a voltage supply range of 10V to 20V. However, the maximum reflow temperature is not specified. It is classified under the JESD-30 Code R-PDIP-T8 and currently does not have a qualified status. The typical rise and fall time for this device is 80ns and 40ns, respectively. It is an interface IC type, specifically a BUFFER OR INVERTER BASED MOSFET DRIVER. Additionally, it has a high side driver and a width of 7.62mm. It is important to note that this device is not compliant with RoHS standards. Overall, this published device offers a wide voltage supply range and fast rise and fall times, but does not meet RoHS requirements.
IR2117 Features
Lead-free A high pulse current buffer stage Ruggedized monolithic construction Available in the 8-Lead PDIP package Proprietary HVIC and latch immune CMOS technologies
IR2117 Applications
Driving MOSFET Driving IGBT
The device was published in 1996 and has a voltage supply range of 10V to 20V. However, the maximum reflow temperature is not specified. It is classified under the JESD-30 Code R-PDIP-T8 and currently does not have a qualified status. The typical rise and fall time for this device is 80ns and 40ns, respectively. It is an interface IC type, specifically a BUFFER OR INVERTER BASED MOSFET DRIVER. Additionally, it has a high side driver and a width of 7.62mm. It is important to note that this device is not compliant with RoHS standards. Overall, this published device offers a wide voltage supply range and fast rise and fall times, but does not meet RoHS requirements.
IR2117 Features
Lead-free A high pulse current buffer stage Ruggedized monolithic construction Available in the 8-Lead PDIP package Proprietary HVIC and latch immune CMOS technologies
IR2117 Applications
Driving MOSFET Driving IGBT
IR2117 More Descriptions
Tube IR2117 High-Side 1996 gate driver 80ns 40ns -40C~150C TJ 250mA 500mA 6V 9.5V
Single High Side Driver, Noninverting Input in a 8-Lead package
Buffer/Inverter Based MOSFET Driver, 0.5A, CMOS, PDIP8
Single High Side Driver, Noninverting Input in a 8-Lead package
Buffer/Inverter Based MOSFET Driver, 0.5A, CMOS, PDIP8
The three parts on the right have similar specifications to IR2117.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReflow Temperature-Max (s)Base Part NumberJESD-30 CodeQualification StatusInput TypeRise / Fall Time (Typ)Interface IC TypeChannel TypeNumber of DriversTurn On TimeOutput Peak Current Limit-NomDriven ConfigurationGate TypeCurrent - Peak Output (Source, Sink)High Side DriverLogic Voltage - VIL, VIHHigh Side Voltage - Max (Bootstrap)Height Seated (Max)LengthWidthRoHS StatusTerminal FormOutput CharacteristicsOutput PolarityInput CharacteristicsSupplier Device PackageView Compare
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IR2117Through Hole8-DIP (0.300, 7.62mm)NO-40°C~150°C TJTube1996e0Obsolete1 (Unlimited)8EAR99Tin/Lead (Sn/Pb)CMOS10V~20VDUALNOT SPECIFIED115V2.54mmNOT SPECIFIEDIR2117R-PDIP-T8Not QualifiedNon-Inverting80ns 40nsBUFFER OR INVERTER BASED MOSFET DRIVERSingle10.2 μs0.5AHigh-SideIGBT, N-Channel MOSFET250mA 500mAYES6V 9.5V600V5.33mm9.88mm7.62mmNon-RoHS Compliant------
-
Surface Mount8-SOIC (0.154, 3.90mm Width)YES-40°C~150°C TJTube1996-Obsolete1 (Unlimited)8EAR99-CMOS10V~20VDUALNOT SPECIFIED115V-NOT SPECIFIEDIR2102SR-PDSO-G8Not QualifiedInverting100ns 50ns-Independent2-0.36AHalf-BridgeIGBT, N-Channel MOSFET210mA 360mAYES0.8V 3V600V1.75mm4.9mm3.9mmNon-RoHS CompliantGULL WINGTOTEM-POLEINVERTEDSCHMITT TRIGGER-
-
Through Hole8-DIP (0.300, 7.62mm)--40°C~150°C TJTube2000-Obsolete1 (Unlimited)----10V~20V------IR2107--Inverting150ns 50ns-Independent2--Half-BridgeIGBT, N-Channel MOSFET200mA 350mA-0.8V 2.7V600V---Non-RoHS Compliant-----
-
Surface Mount14-SOIC (0.154, 3.90mm Width)--40°C~150°C TJTube2000-Obsolete1 (Unlimited)----10V~20V------IR21074S--Inverting150ns 50ns-Independent2--Half-BridgeIGBT, N-Channel MOSFET200mA 350mA-0.8V 2.7V600V---Non-RoHS Compliant----14-SOIC
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