Infineon Technologies IR2113SPBF

600 V high-side and low-side gate driver IC with shutdown, SOIC 16W, RoHSInfineon SCT
MOSFET Driver 600 Volt 2.5A 2 Output Hi/Lo Side Non Input Volt 16-Pin SOIC W
Tube IR2113SPBF Half-Bridge 1996 gate driver 25ns 17ns -40C~150C TJ 2A 2A 6V 9.5V
IR2113 Series 600 V 20 V Supply Dual Output High And Low Side Driver - SOIC-16
Surface Mount Tube Last Time Buy EAR99 Gate Drivers ICs Non-Inverting 2 600V V 16-SOIC (0.295, 7.50mm Width) IR2113SPBF Half-Bridge
MOSFET Driver IC; Device Type:MOSFET; Supply Voltage Min:10V; Supply Voltage Max:25V; Termination Type:SMD; Package/Case:16-SOIC; No. of Pins:16; Operating Temperature Range:-40°C to 125°C; Delay Matching:10ns; Fall Time, tf:17ns ;RoHS Compliant: Yes
DRIVER, MOSFET HIGH/LOW, SMD, 2113; Device Type:High Side / Low Side; Module Configuration:High Side / Low Side; Peak Output Current:2.5A; Input Delay:120ns; Output Delay:94ns; Supply Voltage Range:10V to 20V; Driver Case Style:SOIC; No. of Pins:16; Operating Temperature Range:-40°C to 125°C; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2011); Base Number:2113; IC Generic Number:2113; Logic Function Number:2113; No. of Outputs:2; Offset Voltage:600V; Operating Temperature Max:125°C; Operating Temperature Min:-40°C; Output Current:2.5A; Output Sink Current Min:2000mA; Output Source Current Min:2000mA; Output Voltage:620V; Output Voltage Max:20V; Output Voltage Min:10V; Package / Case:SOIC; Power Dissipation Pd:1.25W; Supply Voltage Max:20V; Supply Voltage Min:10V; Termination Type:SMD; Turn Off Time:94ns; Turn On Time:120ns
The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 500 or 600 volts.
600 V High and Low Side Driver IC with typical 2.5 A source and 2.5 A sink currents in 14 Lead PDIP package for IGBTs and MOSFETs. Also available in 16 Lead SOICWB. | Summary of Features: Floating channel designed for bootstrap operation; Fully operational to 600 V; Fully operational to 500 V version available (IR2110 ); Tolerant to negative transient voltage; dV/dt immune; Gate drive supply range from 10 to 20 V; Undervoltage lockout for both channels; 3.3 V logic compatible; Separate logic supply range from 3.3 V to 20 V; Logic and power ground /- 5 V offset; CMOS Schmitt-triggered inputs with pull-down; Cycle by cycle edge-triggered shutdown logic; Matched propagation delay for both channels; Outputs in phase with inputs