Infineon Technologies IR2113-2
- Part Number:
- IR2113-2
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3256001-IR2113-2
- Description:
- IC MOSFET DRVR HI/LO SIDE 16-DIP
- ECAD Model:
-
- Datasheet:
- IR2113-2
Infineon Technologies IR2113-2 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IR2113-2.
- Mounting TypeThrough Hole
- Package / Case16-DIP (0.300, 7.62mm), 14 Leads
- Supplier Device Package16-PDIP
- Operating Temperature-40°C~150°C TJ
- PackagingTube
- Published2005
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Voltage - Supply3.3V~20V
- Base Part NumberIR2113-2
- Input TypeNon-Inverting
- Rise / Fall Time (Typ)25ns 17ns
- Channel TypeIndependent
- Number of Drivers2
- Driven ConfigurationHalf-Bridge
- Gate TypeIGBT, N-Channel MOSFET
- Current - Peak Output (Source, Sink)2A 2A
- Logic Voltage - VIL, VIH6V 9.5V
- High Side Voltage - Max (Bootstrap)600V
- RoHS StatusNon-RoHS Compliant
IR2113-2 Overview
The supplier device package for this product is a 16-PDIP, making it suitable for a variety of applications. With an operating temperature range of -40°C to 150°C TJ, this product can withstand extreme conditions. However, please note that this product is currently obsolete. The voltage supply for this product ranges from 3.3V to 20V, providing flexibility for different power requirements. The input type is non-inverting, and the channel type is independent, making it easy to integrate into existing systems. This product also features two drivers, providing efficient control. The logic voltage for this product is 6V for VIL and 9.5V for VIH. The high side voltage, max (bootstrap) is 600V. Please note that this product is currently non-RoHS compliant.
IR2113-2 Features
Embedded in the Tube package
2 drivers
Employing a gate type of IGBT, N-Channel MOSFET
High-side voltage - Max (Bootstrap) of 600V
IR2113-2 Applications
There are a lot of Infineon Technologies IR2113-2 gate drivers applications.
Motor Drives
Motor Control
Topologies
Industrial Modules
Active filtering
PCMCIA applications
Broadcast equipment
Video amplifiers
Automotive Applications
Commercial and agricultural vehicles (CAV)
The supplier device package for this product is a 16-PDIP, making it suitable for a variety of applications. With an operating temperature range of -40°C to 150°C TJ, this product can withstand extreme conditions. However, please note that this product is currently obsolete. The voltage supply for this product ranges from 3.3V to 20V, providing flexibility for different power requirements. The input type is non-inverting, and the channel type is independent, making it easy to integrate into existing systems. This product also features two drivers, providing efficient control. The logic voltage for this product is 6V for VIL and 9.5V for VIH. The high side voltage, max (bootstrap) is 600V. Please note that this product is currently non-RoHS compliant.
IR2113-2 Features
Embedded in the Tube package
2 drivers
Employing a gate type of IGBT, N-Channel MOSFET
High-side voltage - Max (Bootstrap) of 600V
IR2113-2 Applications
There are a lot of Infineon Technologies IR2113-2 gate drivers applications.
Motor Drives
Motor Control
Topologies
Industrial Modules
Active filtering
PCMCIA applications
Broadcast equipment
Video amplifiers
Automotive Applications
Commercial and agricultural vehicles (CAV)
IR2113-2 More Descriptions
Non-RoHS Compliant Tin/Lead (Sn/Pb) e0 Through Hole IC Gate Driver 5.33mm 15V 2.5A 125C
Half Bridge Based MOSFET Driver, 2.5A, CMOS, PDIP14
IC MOSFET DRVR HI/LO SIDE 16-DIP
The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 500 or 600 volts.
Half Bridge Based MOSFET Driver, 2.5A, CMOS, PDIP14
IC MOSFET DRVR HI/LO SIDE 16-DIP
The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 500 or 600 volts.
The three parts on the right have similar specifications to IR2113-2.
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ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Voltage - SupplyBase Part NumberInput TypeRise / Fall Time (Typ)Channel TypeNumber of DriversDriven ConfigurationGate TypeCurrent - Peak Output (Source, Sink)Logic Voltage - VIL, VIHHigh Side Voltage - Max (Bootstrap)RoHS StatusSurface MountNumber of TerminationsECCN CodeTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageReflow Temperature-Max (s)JESD-30 CodeQualification StatusOutput CharacteristicsOutput PolarityInput CharacteristicsOutput Peak Current Limit-NomHigh Side DriverHeight Seated (Max)LengthWidthView Compare
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IR2113-2Through Hole16-DIP (0.300, 7.62mm), 14 Leads16-PDIP-40°C~150°C TJTube2005Obsolete1 (Unlimited)3.3V~20VIR2113-2Non-Inverting25ns 17nsIndependent2Half-BridgeIGBT, N-Channel MOSFET2A 2A6V 9.5V600VNon-RoHS Compliant--------------------- -
Surface Mount8-SOIC (0.154, 3.90mm Width)--40°C~150°C TJTube1996Obsolete1 (Unlimited)10V~20VIR2102SInverting100ns 50nsIndependent2Half-BridgeIGBT, N-Channel MOSFET210mA 360mA0.8V 3V600VNon-RoHS CompliantYES8EAR99CMOSDUALGULL WINGNOT SPECIFIED115VNOT SPECIFIEDR-PDSO-G8Not QualifiedTOTEM-POLEINVERTEDSCHMITT TRIGGER0.36AYES1.75mm4.9mm3.9mm
-
Through Hole8-DIP (0.300, 7.62mm)--40°C~150°C TJTube2000Obsolete1 (Unlimited)10V~20VIR2107Inverting150ns 50nsIndependent2Half-BridgeIGBT, N-Channel MOSFET200mA 350mA0.8V 2.7V600VNon-RoHS Compliant--------------------
-
Surface Mount8-SOIC (0.154, 3.90mm Width)--40°C~150°C TJTube1996Obsolete1 (Unlimited)10V~20VIR2104SNon-Inverting100ns 50nsSynchronous2Half-BridgeIGBT, N-Channel MOSFET210mA 360mA0.8V 3V600VNon-RoHS CompliantYES8EAR99CMOSDUALGULL WINGNOT SPECIFIED115VNOT SPECIFIEDR-PDSO-G8Not QualifiedTOTEM-POLETRUESCHMITT TRIGGER0.36AYES1.75mm4.9mm3.9mm
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