Infineon Technologies IR2111SPBF
- Part Number:
- IR2111SPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3735687-IR2111SPBF
- Description:
- IC DRIVER HALF BRIDGE 8SOIC
- Datasheet:
- IR2111SPBF
Infineon Technologies IR2111SPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IR2111SPBF.
- Factory Lead Time12 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Operating Temperature-40°C~150°C TJ
- PackagingTube
- Published1996
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)2 (1 Year)
- Number of Terminations8
- TerminationSMD/SMT
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryMOSFET Drivers
- Max Power Dissipation625mW
- TechnologyCMOS
- Voltage - Supply10V~20V
- Terminal PositionDUAL
- Terminal FormGULL WING
- Number of Functions1
- Supply Voltage15V
- Base Part NumberIR2111SPBF
- Number of Outputs2
- Output Voltage620V
- Max Output Current500mA
- Power Supplies15V
- Nominal Supply Current180μA
- Power Dissipation625mW
- Output Current200mA
- Max Supply Current180μA
- Propagation Delay950 ns
- Input TypeNon-Inverting
- Turn On Delay Time750 ns
- Max Output Voltage20V
- Rise Time130ns
- Fall Time (Typ)65 ns
- Turn-Off Delay Time150 ns
- Min Output Voltage10V
- Rise / Fall Time (Typ)80ns 40ns
- Channel TypeSynchronous
- Turn On Time0.95 μs
- Output Peak Current Limit-Nom0.5A
- Driven ConfigurationHalf-Bridge
- Gate TypeIGBT, N-Channel MOSFET
- Current - Peak Output (Source, Sink)250mA 500mA
- High Side DriverYES
- Logic Voltage - VIL, VIH8.3V 12.6V
- High Side Voltage - Max (Bootstrap)600V
- Height1.4986mm
- Length4.9784mm
- Width3.9878mm
- Radiation HardeningNo
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IR2111SPBF Overview
Its 8-SOIC (0.154, 3.90mm Width) package provides greater flexibility.There is a package in the form of Tube.In the direction of Surface Mount, gate drivers is mounted.In the absence of a 10V~20V supply voltage, its superiority can be demonstrated.A gate type of IGBT, N-Channel MOSFET is used in its design.Temperature range -40°C~150°C TJ is allowed for this device.Mosfet driver accepts input of type Non-Inverting.The configuration starts with 8 terminations.The base part number IR2111SPBF refers to a number of related parts.The device is mounted with Surface Mount.The pins are configured with 8 when designing the chip.A voltage of 15V is required for its operation.There is an output current limit of 500mA for this device.There are various useful electronic components in its subcategory MOSFET Drivers.Maximum (Bootstrap) voltage is 600V.For its basis, 2 outputs are integrated.The output current supported by the device is 200mA.Having the maximum power dissipation of 625mW indicates its maximum capacity to conduct power losses without overheating.If you want a stable supply current, you should keep it at 180μA.The power supply of 15V is able to solve the power supply problems for a wide variety of applications.Mosfet gate drivers produces a voltage of 620V.A maximum output voltage of 20V should be maintained.
IR2111SPBF Features
Embedded in the Tube package
Employing a gate type of IGBT, N-Channel MOSFET
8 pins
High-side voltage - Max (Bootstrap) of 600V
Maximum power dissipation of 625mW
IR2111SPBF Applications
There are a lot of Infineon Technologies IR2111SPBF gate drivers applications.
3-Phase Motor Inverter Driver
High power buffers
Uninterruptible Power Supplies (UPS)
Industrial motor drives - compact, standard, premium, servo drives
Smart Phones
LCD/LCoS/DLP portable and embedded pico projectors
AC-DC Inverters
Driving GaN Power Transistors used in Full or Half?Bridge, LLC,
Motor Controls
High-speed communications
Its 8-SOIC (0.154, 3.90mm Width) package provides greater flexibility.There is a package in the form of Tube.In the direction of Surface Mount, gate drivers is mounted.In the absence of a 10V~20V supply voltage, its superiority can be demonstrated.A gate type of IGBT, N-Channel MOSFET is used in its design.Temperature range -40°C~150°C TJ is allowed for this device.Mosfet driver accepts input of type Non-Inverting.The configuration starts with 8 terminations.The base part number IR2111SPBF refers to a number of related parts.The device is mounted with Surface Mount.The pins are configured with 8 when designing the chip.A voltage of 15V is required for its operation.There is an output current limit of 500mA for this device.There are various useful electronic components in its subcategory MOSFET Drivers.Maximum (Bootstrap) voltage is 600V.For its basis, 2 outputs are integrated.The output current supported by the device is 200mA.Having the maximum power dissipation of 625mW indicates its maximum capacity to conduct power losses without overheating.If you want a stable supply current, you should keep it at 180μA.The power supply of 15V is able to solve the power supply problems for a wide variety of applications.Mosfet gate drivers produces a voltage of 620V.A maximum output voltage of 20V should be maintained.
IR2111SPBF Features
Embedded in the Tube package
Employing a gate type of IGBT, N-Channel MOSFET
8 pins
High-side voltage - Max (Bootstrap) of 600V
Maximum power dissipation of 625mW
IR2111SPBF Applications
There are a lot of Infineon Technologies IR2111SPBF gate drivers applications.
3-Phase Motor Inverter Driver
High power buffers
Uninterruptible Power Supplies (UPS)
Industrial motor drives - compact, standard, premium, servo drives
Smart Phones
LCD/LCoS/DLP portable and embedded pico projectors
AC-DC Inverters
Driving GaN Power Transistors used in Full or Half?Bridge, LLC,
Motor Controls
High-speed communications
IR2111SPBF More Descriptions
600 V half-bridge gate driver IC with shoot through protection, SOIC 8N, RoHSInfineon SCT
MOSFET and Power Driver 0.25A/0.5A 2-OUT High and Low Side Non-Inverting 8-Pin SOIC Tube - Rail/Tube
HALF BRIDGE DRIVER, FIXED 650NS DEADTIME IN A 8-LEAD SOIC PACKAGE | Infineon IR2111SPBF
IR2111 Series 600 V 250 mA 20 V Supply Dual Output Half Bridge Driver - SOIC-8
DRIVER, MOSFET/IGBT, HALF BRIDGE, SMD; Device Type:MOSFET; Module Configuration:Half Bridge; Peak Output Current:500mA; Input Delay:750ns; Output Delay:150ns; Supply Voltage Range:10V to 20V; Driver Case Style:SOIC; No. of Pins:8; Operating Temperature Range:-40°C to 125°C; MSL:MSL 2 - 1 year; SVHC:No SVHC (20-Jun-2011); Base Number:2111; IC Generic Number:2111; Logic Function Number:2111; No. of Outputs:2; Offset Voltage:600V; Operating Temperature Max:125°C; Operating Temperature Min:-40°C; Output Current:250mA; Output Sink Current Min:420mA; Output Source Current Min:200mA; Output Voltage:620V; Output Voltage Max:20V; Output Voltage Min:10V; Package / Case:SOIC; Power Dissipation Pd:0.625W; Supply Voltage Max:20V; Supply Voltage Min:10V; Termination Type:SMD; Turn Off Time:150ns; Turn On Time:750ns
600 V Half Bridge Driver IC with typical 0.25 A source and 0.5 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PDIP. | Summary of Features: Floating channel designed for bootstrap operation; Fully operational to 600 V; Tolerant to negative transient voltage; dV/dt immune; Gate drive supply range from 10 to 20 V; Undervoltage lockout for both channels; CMOS Schmitt-triggered inputs with pull-down; Matched propagation delay for both channels; Internally set deadtime; High side output in phase with input
MOSFET and Power Driver 0.25A/0.5A 2-OUT High and Low Side Non-Inverting 8-Pin SOIC Tube - Rail/Tube
HALF BRIDGE DRIVER, FIXED 650NS DEADTIME IN A 8-LEAD SOIC PACKAGE | Infineon IR2111SPBF
IR2111 Series 600 V 250 mA 20 V Supply Dual Output Half Bridge Driver - SOIC-8
DRIVER, MOSFET/IGBT, HALF BRIDGE, SMD; Device Type:MOSFET; Module Configuration:Half Bridge; Peak Output Current:500mA; Input Delay:750ns; Output Delay:150ns; Supply Voltage Range:10V to 20V; Driver Case Style:SOIC; No. of Pins:8; Operating Temperature Range:-40°C to 125°C; MSL:MSL 2 - 1 year; SVHC:No SVHC (20-Jun-2011); Base Number:2111; IC Generic Number:2111; Logic Function Number:2111; No. of Outputs:2; Offset Voltage:600V; Operating Temperature Max:125°C; Operating Temperature Min:-40°C; Output Current:250mA; Output Sink Current Min:420mA; Output Source Current Min:200mA; Output Voltage:620V; Output Voltage Max:20V; Output Voltage Min:10V; Package / Case:SOIC; Power Dissipation Pd:0.625W; Supply Voltage Max:20V; Supply Voltage Min:10V; Termination Type:SMD; Turn Off Time:150ns; Turn On Time:750ns
600 V Half Bridge Driver IC with typical 0.25 A source and 0.5 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PDIP. | Summary of Features: Floating channel designed for bootstrap operation; Fully operational to 600 V; Tolerant to negative transient voltage; dV/dt immune; Gate drive supply range from 10 to 20 V; Undervoltage lockout for both channels; CMOS Schmitt-triggered inputs with pull-down; Matched propagation delay for both channels; Internally set deadtime; High side output in phase with input
The three parts on the right have similar specifications to IR2111SPBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeTerminal FinishSubcategoryMax Power DissipationTechnologyVoltage - SupplyTerminal PositionTerminal FormNumber of FunctionsSupply VoltageBase Part NumberNumber of OutputsOutput VoltageMax Output CurrentPower SuppliesNominal Supply CurrentPower DissipationOutput CurrentMax Supply CurrentPropagation DelayInput TypeTurn On Delay TimeMax Output VoltageRise TimeFall Time (Typ)Turn-Off Delay TimeMin Output VoltageRise / Fall Time (Typ)Channel TypeTurn On TimeOutput Peak Current Limit-NomDriven ConfigurationGate TypeCurrent - Peak Output (Source, Sink)High Side DriverLogic Voltage - VIL, VIHHigh Side Voltage - Max (Bootstrap)HeightLengthWidthRadiation HardeningREACH SVHCRoHS StatusLead FreeSurface MountPeak Reflow Temperature (Cel)Reflow Temperature-Max (s)JESD-30 CodeQualification StatusOutput CharacteristicsOutput PolarityInput CharacteristicsNumber of DriversHeight Seated (Max)Supplier Device PackageView Compare
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IR2111SPBF12 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8-40°C~150°C TJTube1996e3Active2 (1 Year)8SMD/SMTEAR99Matte Tin (Sn)MOSFET Drivers625mWCMOS10V~20VDUALGULL WING115VIR2111SPBF2620V500mA15V180μA625mW200mA180μA950 nsNon-Inverting750 ns20V130ns65 ns150 ns10V80ns 40nsSynchronous0.95 μs0.5AHalf-BridgeIGBT, N-Channel MOSFET250mA 500mAYES8.3V 12.6V600V1.4986mm4.9784mm3.9878mmNoNo SVHCROHS3 CompliantLead Free------------
-
--Surface Mount8-SOIC (0.154, 3.90mm Width)--40°C~150°C TJTube1996-Obsolete1 (Unlimited)8-EAR99---CMOS10V~20VDUALGULL WING115VIR2102S---------Inverting------100ns 50nsIndependent-0.36AHalf-BridgeIGBT, N-Channel MOSFET210mA 360mAYES0.8V 3V600V-4.9mm3.9mm--Non-RoHS Compliant-YESNOT SPECIFIEDNOT SPECIFIEDR-PDSO-G8Not QualifiedTOTEM-POLEINVERTEDSCHMITT TRIGGER21.75mm-
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--Through Hole8-DIP (0.300, 7.62mm)--40°C~150°C TJTube2000-Obsolete1 (Unlimited)-------10V~20V----IR2107---------Inverting------150ns 50nsIndependent--Half-BridgeIGBT, N-Channel MOSFET200mA 350mA-0.8V 2.7V600V-----Non-RoHS Compliant---------2--
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--Surface Mount14-SOIC (0.154, 3.90mm Width)--40°C~150°C TJTube2000-Obsolete1 (Unlimited)-------10V~20V----IR21074S---------Inverting------150ns 50nsIndependent--Half-BridgeIGBT, N-Channel MOSFET200mA 350mA-0.8V 2.7V600V-----Non-RoHS Compliant---------2-14-SOIC
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