Infineon Technologies IR2110PBF
- Part Number:
- IR2110PBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3253862-IR2110PBF
- Description:
- IC DRIVER HIGH/LOW SIDE 14DIP
- Datasheet:
- IR2110PBF
Infineon Technologies IR2110PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IR2110PBF.
- Factory Lead Time26 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / Case14-DIP (0.300, 7.62mm)
- Number of Pins14
- Weight1.620005g
- Operating Temperature-40°C~150°C TJ
- PackagingTube
- Published1996
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations14
- TerminationThrough Hole
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryMOSFET Drivers
- Max Power Dissipation1.6W
- TechnologyCMOS
- Voltage - Supply3.3V~20V
- Terminal PositionDUAL
- Peak Reflow Temperature (Cel)250
- Number of Functions1
- Supply Voltage15V
- Reflow Temperature-Max (s)30
- Base Part NumberIR2110PBF
- Number of Outputs2
- Output Voltage20V
- Max Output Current2A
- Operating Supply Voltage15V
- Operating Supply Current340μA
- Power Dissipation1.6W
- Output Current2.5A
- Max Supply Current340μA
- Propagation Delay150 ns
- Input TypeNon-Inverting
- Turn On Delay Time10 ns
- Max Output Voltage20V
- Rise Time35ns
- Fall Time (Typ)25 ns
- Turn-Off Delay Time10 ns
- Min Output Voltage10V
- Rise / Fall Time (Typ)25ns 17ns
- Channel TypeIndependent
- Turn On Time0.15 μs
- Output Peak Current Limit-Nom2.5A
- Driven ConfigurationHalf-Bridge
- Gate TypeIGBT, N-Channel MOSFET
- Current - Peak Output (Source, Sink)2A 2A
- High Side DriverYES
- Logic Voltage - VIL, VIH6V 9.5V
- High Side Voltage - Max (Bootstrap)500V
- Height4.9276mm
- Length20.1676mm
- Width7.11mm
- Radiation HardeningNo
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeContains Lead, Lead Free
IR2110PBF Overview
Its 14-DIP (0.300, 7.62mm) package is adopted for higher flexibility.Tube is the packaging method.There is a mounting bracket in the way of Through Hole.Gate drivers is able to show Gate driverss superiorGate driversy on the basis of a supply voltage of 3.3V~20V.Gate type IGBT, N-Channel MOSFET has been used in its design.This device can operate at temperatures up to -40°C~150°C TJ.The input type is Non-Inverting.The configuration starts with 14 terminations.Mosfet driver is possible to find various related parts under Mosfet drivers base part number IR2110PBF.The device is mounted using Through Hole.A total of 14 pins are available on the device.A supply voltage of 15V is required for operation.As a maximum, there is 2A limit to the output current.There are several useful electronic components within its subcategory MOSFET Drivers.High-side voltage - Max (Bootstrap) can be as low as 500V.The basis of this model has 2 outputs integrated.This device supports a current output of 2.5A at the output.Based on the maximum power dissipation of 1.6W, it is clear that it is capable of transferring and conducting power losses without becoming overheated.If you want a stable supply current, you should keep it at 340μA.In this case, it produces a voltage of 20V.Setting the operating supply voltage to 15V is recommended.The supply voltage is 340μA.A maximum voltage of 20V should be maintained for the output voltage.
IR2110PBF Features
Embedded in the Tube package
Employing a gate type of IGBT, N-Channel MOSFET
14 pins
High-side voltage - Max (Bootstrap) of 500V
Maximum power dissipation of 1.6W
IR2110PBF Applications
There are a lot of Infineon Technologies IR2110PBF gate drivers applications.
Multicolor LED/laser displays
Isolated switch mode power supplies (SMPS)
Portable Media Players
Motor Control
DC/DC converters
Refrigerator
Broadcast equipment
Portable Navigation Devices
Smart Phones
LCD/LCoS/DLP portable and embedded pico projectors
Its 14-DIP (0.300, 7.62mm) package is adopted for higher flexibility.Tube is the packaging method.There is a mounting bracket in the way of Through Hole.Gate drivers is able to show Gate driverss superiorGate driversy on the basis of a supply voltage of 3.3V~20V.Gate type IGBT, N-Channel MOSFET has been used in its design.This device can operate at temperatures up to -40°C~150°C TJ.The input type is Non-Inverting.The configuration starts with 14 terminations.Mosfet driver is possible to find various related parts under Mosfet drivers base part number IR2110PBF.The device is mounted using Through Hole.A total of 14 pins are available on the device.A supply voltage of 15V is required for operation.As a maximum, there is 2A limit to the output current.There are several useful electronic components within its subcategory MOSFET Drivers.High-side voltage - Max (Bootstrap) can be as low as 500V.The basis of this model has 2 outputs integrated.This device supports a current output of 2.5A at the output.Based on the maximum power dissipation of 1.6W, it is clear that it is capable of transferring and conducting power losses without becoming overheated.If you want a stable supply current, you should keep it at 340μA.In this case, it produces a voltage of 20V.Setting the operating supply voltage to 15V is recommended.The supply voltage is 340μA.A maximum voltage of 20V should be maintained for the output voltage.
IR2110PBF Features
Embedded in the Tube package
Employing a gate type of IGBT, N-Channel MOSFET
14 pins
High-side voltage - Max (Bootstrap) of 500V
Maximum power dissipation of 1.6W
IR2110PBF Applications
There are a lot of Infineon Technologies IR2110PBF gate drivers applications.
Multicolor LED/laser displays
Isolated switch mode power supplies (SMPS)
Portable Media Players
Motor Control
DC/DC converters
Refrigerator
Broadcast equipment
Portable Navigation Devices
Smart Phones
LCD/LCoS/DLP portable and embedded pico projectors
IR2110PBF More Descriptions
500 V high-side and low-side gate driver IC with shutdown, PDIP14, RoHSInfineon SCT
Tube IR2110PBF Half-Bridge 1996 gate driver 35ns -40C~150C TJ 2A 2A 1.6W
IR2110 Series Dual 20 V 2.5 A Through Hole High and Low Side Driver - DIP-14
Driver 500V 2.5A 2-OUT High and Low Side Non-Inv 14-Pin PDIP Tube
Driver IC; Device Type:MOSFET; Supply Voltage Min:10V; Supply Voltage Max:25V; Package/Case:14-DIP; No. of Pins:14; Operating Temperature Range:-40°C to 125°C; Delay Matching:10ns; Fall Time, tf:17ns ;RoHS Compliant: Yes
500 V High and Low Side Driver IC with typical 2.5 A source and 2.5 A sink currents in 14 Lead PDIP package for IGBTs and MOSFETs. Also available in 16 Lead SOIC WB. | Summary of Features: Floating channel designed for bootstrap operation; Fully operational to 500 V; Fully operational to 600 V verstion available (IR2113; dV/dt immune; Gate drive supply range from 10 to 20 V; Undervoltage lockout for both channels; 3.3 V logic compatible; Separate logic supply range from 3.3 V to 20 V; Logic and power ground /- 5 V offset; CMOS Schmitt-triggered inputs with pull-down; Cycle by cycle edge-triggered shutdown logic; Matched propagation delay for both channels; Outputs in phase with inputs
The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 500 or 600 volts.
DRIVER, MOSFET HIGH/LOW, 2110, DIP14; Device Type:High Side / Low Side; Module Configuration:High Side / Low Side; Peak Output Current:2.5A; Input Delay:120ns; Output Delay:94ns; Supply Voltage Range:10V to 20V; Driver Case Style:DIP; No. of Pins:14; Operating Temperature Range:-40°C to 125°C; SVHC:No SVHC (19-Dec-2011); Base Number:2110; IC Generic Number:2110; Logic Function Number:2110; No. of Outputs:2; Offset Voltage:500V; Operating Temperature Max:125°C; Operating Temperature Min:-40°C; Output Current:2.5A; Output Sink Current Min:2000mA; Output Source Current Min:2000mA; Output Voltage:520V; Output Voltage Max:20V; Output Voltage Min:10V; Package / Case:DIP; Power Dissipation Pd:1.6W; Supply Voltage Max:20V; Supply Voltage Min:10V; Termination Type:Through Hole; Turn Off Time:94ns; Turn On Time:120ns
Tube IR2110PBF Half-Bridge 1996 gate driver 35ns -40C~150C TJ 2A 2A 1.6W
IR2110 Series Dual 20 V 2.5 A Through Hole High and Low Side Driver - DIP-14
Driver 500V 2.5A 2-OUT High and Low Side Non-Inv 14-Pin PDIP Tube
Driver IC; Device Type:MOSFET; Supply Voltage Min:10V; Supply Voltage Max:25V; Package/Case:14-DIP; No. of Pins:14; Operating Temperature Range:-40°C to 125°C; Delay Matching:10ns; Fall Time, tf:17ns ;RoHS Compliant: Yes
500 V High and Low Side Driver IC with typical 2.5 A source and 2.5 A sink currents in 14 Lead PDIP package for IGBTs and MOSFETs. Also available in 16 Lead SOIC WB. | Summary of Features: Floating channel designed for bootstrap operation; Fully operational to 500 V; Fully operational to 600 V verstion available (IR2113; dV/dt immune; Gate drive supply range from 10 to 20 V; Undervoltage lockout for both channels; 3.3 V logic compatible; Separate logic supply range from 3.3 V to 20 V; Logic and power ground /- 5 V offset; CMOS Schmitt-triggered inputs with pull-down; Cycle by cycle edge-triggered shutdown logic; Matched propagation delay for both channels; Outputs in phase with inputs
The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 500 or 600 volts.
DRIVER, MOSFET HIGH/LOW, 2110, DIP14; Device Type:High Side / Low Side; Module Configuration:High Side / Low Side; Peak Output Current:2.5A; Input Delay:120ns; Output Delay:94ns; Supply Voltage Range:10V to 20V; Driver Case Style:DIP; No. of Pins:14; Operating Temperature Range:-40°C to 125°C; SVHC:No SVHC (19-Dec-2011); Base Number:2110; IC Generic Number:2110; Logic Function Number:2110; No. of Outputs:2; Offset Voltage:500V; Operating Temperature Max:125°C; Operating Temperature Min:-40°C; Output Current:2.5A; Output Sink Current Min:2000mA; Output Source Current Min:2000mA; Output Voltage:520V; Output Voltage Max:20V; Output Voltage Min:10V; Package / Case:DIP; Power Dissipation Pd:1.6W; Supply Voltage Max:20V; Supply Voltage Min:10V; Termination Type:Through Hole; Turn Off Time:94ns; Turn On Time:120ns
The three parts on the right have similar specifications to IR2110PBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeTerminal FinishSubcategoryMax Power DissipationTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageReflow Temperature-Max (s)Base Part NumberNumber of OutputsOutput VoltageMax Output CurrentOperating Supply VoltageOperating Supply CurrentPower DissipationOutput CurrentMax Supply CurrentPropagation DelayInput TypeTurn On Delay TimeMax Output VoltageRise TimeFall Time (Typ)Turn-Off Delay TimeMin Output VoltageRise / Fall Time (Typ)Channel TypeTurn On TimeOutput Peak Current Limit-NomDriven ConfigurationGate TypeCurrent - Peak Output (Source, Sink)High Side DriverLogic Voltage - VIL, VIHHigh Side Voltage - Max (Bootstrap)HeightLengthWidthRadiation HardeningREACH SVHCRoHS StatusLead FreeSurface MountTerminal FormJESD-30 CodeQualification StatusOutput CharacteristicsOutput PolarityInput CharacteristicsNumber of DriversHeight Seated (Max)View Compare
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IR2110PBF26 WeeksThrough HoleThrough Hole14-DIP (0.300, 7.62mm)141.620005g-40°C~150°C TJTube1996e3Active1 (Unlimited)14Through HoleEAR99Matte Tin (Sn)MOSFET Drivers1.6WCMOS3.3V~20VDUAL250115V30IR2110PBF220V2A15V340μA1.6W2.5A340μA150 nsNon-Inverting10 ns20V35ns25 ns10 ns10V25ns 17nsIndependent0.15 μs2.5AHalf-BridgeIGBT, N-Channel MOSFET2A 2AYES6V 9.5V500V4.9276mm20.1676mm7.11mmNoNo SVHCROHS3 CompliantContains Lead, Lead Free----------
-
--Surface Mount8-SOIC (0.154, 3.90mm Width)---40°C~150°C TJTube1996-Obsolete1 (Unlimited)8-EAR99---CMOS10V~20VDUALNOT SPECIFIED115VNOT SPECIFIEDIR2102S---------Inverting------100ns 50nsIndependent-0.36AHalf-BridgeIGBT, N-Channel MOSFET210mA 360mAYES0.8V 3V600V-4.9mm3.9mm--Non-RoHS Compliant-YESGULL WINGR-PDSO-G8Not QualifiedTOTEM-POLEINVERTEDSCHMITT TRIGGER21.75mm
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--Through Hole8-DIP (0.300, 7.62mm)---40°C~150°C TJTube2000-Obsolete1 (Unlimited)-------10V~20V-----IR2107---------Inverting------150ns 50nsIndependent--Half-BridgeIGBT, N-Channel MOSFET200mA 350mA-0.8V 2.7V600V-----Non-RoHS Compliant--------2-
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--Surface Mount8-SOIC (0.154, 3.90mm Width)---40°C~150°C TJTube1996-Obsolete1 (Unlimited)8-EAR99---CMOS10V~20VDUALNOT SPECIFIED115VNOT SPECIFIEDIR2104S---------Non-Inverting------100ns 50nsSynchronous-0.36AHalf-BridgeIGBT, N-Channel MOSFET210mA 360mAYES0.8V 3V600V-4.9mm3.9mm--Non-RoHS Compliant-YESGULL WINGR-PDSO-G8Not QualifiedTOTEM-POLETRUESCHMITT TRIGGER21.75mm
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