Infineon Technologies IR2110-2PBF
- Part Number:
- IR2110-2PBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3737073-IR2110-2PBF
- Description:
- IC DRIVER HIGH/LOW SIDE 14-DIP
- Datasheet:
- IR2110-2PBF
Infineon Technologies IR2110-2PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IR2110-2PBF.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / Case16-DIP (0.300, 7.62mm), 14 Leads
- Number of Pins14
- Supplier Device Package16-PDIP
- Operating Temperature-40°C~150°C TJ
- PackagingTube
- Published2005
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature125°C
- Min Operating Temperature-40°C
- Max Power Dissipation1.6W
- Voltage - Supply3.3V~20V
- Base Part NumberIR2110-2PBF
- Number of Outputs2
- Max Output Current2A
- Max Supply Voltage20V
- Min Supply Voltage10V
- Nominal Supply Current340μA
- Power Dissipation1.6W
- Output Current2A
- Max Supply Current340μA
- Propagation Delay150 ns
- Input TypeNon-Inverting
- Turn On Delay Time10 ns
- Rise Time35ns
- Fall Time (Typ)25 ns
- Turn-Off Delay Time10 ns
- Rise / Fall Time (Typ)25ns 17ns
- Channel TypeIndependent
- Number of Drivers2
- Driven ConfigurationHalf-Bridge
- Gate TypeIGBT, N-Channel MOSFET
- Current - Peak Output (Source, Sink)2A 2A
- Logic Voltage - VIL, VIH6V 9.5V
- High Side Voltage - Max (Bootstrap)500V
- Radiation HardeningNo
- REACH SVHCNo SVHC
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
IR2110-2PBF Overview
The mounting type for this electronic component is through hole, which allows for secure and stable installation on a circuit board. The supplier device package is a 16-PDIP, providing a compact and efficient design. With a maximum power dissipation of 1.6W, this component can handle high levels of power without overheating. It has two outputs, making it versatile for various circuit configurations. The minimum supply voltage required is 10V, ensuring reliable operation. The propagation delay of 150ns allows for quick response time, while the rise and fall time of 25ns and 17ns respectively, ensures efficient switching. This component is a combination of an IGBT and N-channel MOSFET, providing the benefits of both technologies. It can handle a peak output current of 2A for both source and sink, making it suitable for high power applications. The high side voltage of 500V (max) for bootstrap operation further enhances its capabilities.
IR2110-2PBF Features
Embedded in the Tube package
2 drivers
Employing a gate type of IGBT, N-Channel MOSFET
14 pins
High-side voltage - Max (Bootstrap) of 500V
Maximum power dissipation of 1.6W
IR2110-2PBF Applications
There are a lot of Infineon Technologies IR2110-2PBF gate drivers applications.
Motor controllers
General Purpose 3-Phase Inverter
Head-up and Head mounted displays
Driving GaN Power Transistors used in Full or Half?Bridge, LLC,
Line drivers
Portable computers
High power buffers
High current laser/LED systems
High-speed communications
Uninterruptible Power Supplies (UPS)
The mounting type for this electronic component is through hole, which allows for secure and stable installation on a circuit board. The supplier device package is a 16-PDIP, providing a compact and efficient design. With a maximum power dissipation of 1.6W, this component can handle high levels of power without overheating. It has two outputs, making it versatile for various circuit configurations. The minimum supply voltage required is 10V, ensuring reliable operation. The propagation delay of 150ns allows for quick response time, while the rise and fall time of 25ns and 17ns respectively, ensures efficient switching. This component is a combination of an IGBT and N-channel MOSFET, providing the benefits of both technologies. It can handle a peak output current of 2A for both source and sink, making it suitable for high power applications. The high side voltage of 500V (max) for bootstrap operation further enhances its capabilities.
IR2110-2PBF Features
Embedded in the Tube package
2 drivers
Employing a gate type of IGBT, N-Channel MOSFET
14 pins
High-side voltage - Max (Bootstrap) of 500V
Maximum power dissipation of 1.6W
IR2110-2PBF Applications
There are a lot of Infineon Technologies IR2110-2PBF gate drivers applications.
Motor controllers
General Purpose 3-Phase Inverter
Head-up and Head mounted displays
Driving GaN Power Transistors used in Full or Half?Bridge, LLC,
Line drivers
Portable computers
High power buffers
High current laser/LED systems
High-speed communications
Uninterruptible Power Supplies (UPS)
IR2110-2PBF More Descriptions
High And Low Side Driver, All High Voltage Pins on One Side, 16-PIN DIP -2 Leads
Driver 500V 2.5A 2-OUT High and Low Side Non-Inv 12-Pin PDIP
MOSFET Driver IC; Device Type:IGBT/MOSFET; No. of Outputs:2; Output Voltage:520V; Output Current:2A; Power Dissipation, Pd:1.6W; Supply Voltage Min:10V; Supply Voltage Max:20V; Termination Type:Through Hole; Package/Case:PDIP ;RoHS Compliant: Yes
IC, MOSFET DRIVER, HIGH/LOW SIDE, DIP-14; IC, MOSFET DRIVER, HIGH/LOW SIDE, DIP-14; Device Type:High Side / Low Side; Module Configuration:High Side / Low Side; Peak Output Current:2.5A; Input Delay:120ns; Output Delay:94ns; Supply Voltage Range:10V to 20V
The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 500 or 600 volts.
Driver 500V 2.5A 2-OUT High and Low Side Non-Inv 12-Pin PDIP
MOSFET Driver IC; Device Type:IGBT/MOSFET; No. of Outputs:2; Output Voltage:520V; Output Current:2A; Power Dissipation, Pd:1.6W; Supply Voltage Min:10V; Supply Voltage Max:20V; Termination Type:Through Hole; Package/Case:PDIP ;RoHS Compliant: Yes
IC, MOSFET DRIVER, HIGH/LOW SIDE, DIP-14; IC, MOSFET DRIVER, HIGH/LOW SIDE, DIP-14; Device Type:High Side / Low Side; Module Configuration:High Side / Low Side; Peak Output Current:2.5A; Input Delay:120ns; Output Delay:94ns; Supply Voltage Range:10V to 20V
The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 500 or 600 volts.
The three parts on the right have similar specifications to IR2110-2PBF.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureMax Power DissipationVoltage - SupplyBase Part NumberNumber of OutputsMax Output CurrentMax Supply VoltageMin Supply VoltageNominal Supply CurrentPower DissipationOutput CurrentMax Supply CurrentPropagation DelayInput TypeTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeRise / Fall Time (Typ)Channel TypeNumber of DriversDriven ConfigurationGate TypeCurrent - Peak Output (Source, Sink)Logic Voltage - VIL, VIHHigh Side Voltage - Max (Bootstrap)Radiation HardeningREACH SVHCRoHS StatusLead FreeSurface MountNumber of TerminationsECCN CodeTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageReflow Temperature-Max (s)JESD-30 CodeQualification StatusOutput CharacteristicsOutput PolarityInput CharacteristicsOutput Peak Current Limit-NomHigh Side DriverHeight Seated (Max)LengthWidthFactory Lead TimeTerminationSubcategoryOutput VoltagePower SuppliesMax Output VoltageMin Output VoltageHeightView Compare
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IR2110-2PBFThrough HoleThrough Hole16-DIP (0.300, 7.62mm), 14 Leads1416-PDIP-40°C~150°C TJTube2005Obsolete1 (Unlimited)125°C-40°C1.6W3.3V~20VIR2110-2PBF22A20V10V340μA1.6W2A340μA150 nsNon-Inverting10 ns35ns25 ns10 ns25ns 17nsIndependent2Half-BridgeIGBT, N-Channel MOSFET2A 2A6V 9.5V500VNoNo SVHCRoHS CompliantLead Free-----------------------------
-
-Through Hole8-DIP (0.300, 7.62mm)---40°C~150°C TJTube2000Obsolete1 (Unlimited)---10V~20VIR2107---------Inverting----150ns 50nsIndependent2Half-BridgeIGBT, N-Channel MOSFET200mA 350mA0.8V 2.7V600V--Non-RoHS Compliant-----------------------------
-
-Surface Mount8-SOIC (0.154, 3.90mm Width)---40°C~150°C TJTube1996Obsolete1 (Unlimited)---10V~20VIR2104S---------Non-Inverting----100ns 50nsSynchronous2Half-BridgeIGBT, N-Channel MOSFET210mA 360mA0.8V 3V600V--Non-RoHS Compliant-YES8EAR99CMOSDUALGULL WINGNOT SPECIFIED115VNOT SPECIFIEDR-PDSO-G8Not QualifiedTOTEM-POLETRUESCHMITT TRIGGER0.36AYES1.75mm4.9mm3.9mm--------
-
Through HoleThrough Hole8-DIP (0.300, 7.62mm)8--40°C~150°C TJTube1996Active1 (Unlimited)--1W10V~20VIR2101PBF2360mA--270μA1W210mA270μA220 nsNon-Inverting50 ns170ns90 ns150 ns100ns 50nsIndependent-Half-BridgeIGBT, N-Channel MOSFET210mA 360mA0.8V 3V600VNoNo SVHCROHS3 CompliantLead Free-8EAR99CMOSDUAL--115V------0.36AYES-10.8966mm7.11mm12 WeeksThrough HoleMOSFET Drivers620V15V20V10V4.9276mm
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