Infineon Technologies IR2110-2
- Part Number:
- IR2110-2
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3255999-IR2110-2
- Description:
- IC DRIVER HIGH/LOW SIDE 14-DIP
- ECAD Model:
-
- Datasheet:
- IR2110-2
Infineon Technologies IR2110-2 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IR2110-2.
- Mounting TypeThrough Hole
- Package / Case16-DIP (0.300, 7.62mm), 14 Leads
- Supplier Device Package16-PDIP
- Operating Temperature-40°C~150°C TJ
- PackagingTube
- Published2005
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Voltage - Supply3.3V~20V
- Base Part NumberIR2110-2
- Input TypeNon-Inverting
- Rise / Fall Time (Typ)25ns 17ns
- Channel TypeIndependent
- Number of Drivers2
- Driven ConfigurationHalf-Bridge
- Gate TypeIGBT, N-Channel MOSFET
- Current - Peak Output (Source, Sink)2A 2A
- Logic Voltage - VIL, VIH6V 9.5V
- High Side Voltage - Max (Bootstrap)500V
- RoHS StatusNon-RoHS Compliant
IR2110-2 Overview
The Infineon Technologies brand offers a PMIC - Gate Drivers chip, specifically the IR2110-2 model. This chip falls under the PMIC - Gate Drivers category and is designed for Through Hole mounting. It has a Supplier Device Package of 16-PDIP and a Moisture Sensitivity Level of 1 (Unlimited). The chip operates at a voltage range of 3.3V to 20V and has a Gate Type suitable for IGBT and N-Channel MOSFET. With 2 drivers, it can handle a peak output of 2A for both source and sink currents. The High Side Voltage (Bootstrap) can reach up to 500V. It is important to note that this chip is Non-RoHS Compliant.
IR2110-2 Features
Embedded in the Tube package
2 drivers
Employing a gate type of IGBT, N-Channel MOSFET
High-side voltage - Max (Bootstrap) of 500V
IR2110-2 Applications
There are a lot of Infineon Technologies IR2110-2 gate drivers applications.
Dual-Battery Systems
Industrial Modules
Telecom switch mode power supplies
Motor Controls
Video amplifiers
High frequency line drivers
Commercial air-conditioning (CAC)
Industrial Motor Inverter - Power Tools, Robotics
PCMCIA applications
Uninterruptible Power Supplies (UPS)
The Infineon Technologies brand offers a PMIC - Gate Drivers chip, specifically the IR2110-2 model. This chip falls under the PMIC - Gate Drivers category and is designed for Through Hole mounting. It has a Supplier Device Package of 16-PDIP and a Moisture Sensitivity Level of 1 (Unlimited). The chip operates at a voltage range of 3.3V to 20V and has a Gate Type suitable for IGBT and N-Channel MOSFET. With 2 drivers, it can handle a peak output of 2A for both source and sink currents. The High Side Voltage (Bootstrap) can reach up to 500V. It is important to note that this chip is Non-RoHS Compliant.
IR2110-2 Features
Embedded in the Tube package
2 drivers
Employing a gate type of IGBT, N-Channel MOSFET
High-side voltage - Max (Bootstrap) of 500V
IR2110-2 Applications
There are a lot of Infineon Technologies IR2110-2 gate drivers applications.
Dual-Battery Systems
Industrial Modules
Telecom switch mode power supplies
Motor Controls
Video amplifiers
High frequency line drivers
Commercial air-conditioning (CAC)
Industrial Motor Inverter - Power Tools, Robotics
PCMCIA applications
Uninterruptible Power Supplies (UPS)
IR2110-2 More Descriptions
RoHS Compliant Tin/Lead (Sn/Pb) e0 Through Hole IC Gate Driver 5.33mm 15V 2.5A 125C
Half Bridge Based MOSFET Driver, 2.5A, CMOS, PDIP14
Control IC, CIC(R) International Rectifier IR 2110-2 Case type DIP 16 L Specification Control IC 500 V, 2 A
IC DRIVER HIGH/LOW SIDE 14-DIP
The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 500 or 600 volts.
Half Bridge Based MOSFET Driver, 2.5A, CMOS, PDIP14
Control IC, CIC(R) International Rectifier IR 2110-2 Case type DIP 16 L Specification Control IC 500 V, 2 A
IC DRIVER HIGH/LOW SIDE 14-DIP
The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 500 or 600 volts.
The three parts on the right have similar specifications to IR2110-2.
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ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Voltage - SupplyBase Part NumberInput TypeRise / Fall Time (Typ)Channel TypeNumber of DriversDriven ConfigurationGate TypeCurrent - Peak Output (Source, Sink)Logic Voltage - VIL, VIHHigh Side Voltage - Max (Bootstrap)RoHS StatusSurface MountNumber of TerminationsECCN CodeTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageReflow Temperature-Max (s)JESD-30 CodeQualification StatusOutput CharacteristicsOutput PolarityInput CharacteristicsOutput Peak Current Limit-NomHigh Side DriverHeight Seated (Max)LengthWidthFactory Lead TimeMountNumber of PinsTerminationSubcategoryMax Power DissipationNumber of OutputsOutput VoltageMax Output CurrentPower SuppliesNominal Supply CurrentPower DissipationOutput CurrentMax Supply CurrentPropagation DelayTurn On Delay TimeMax Output VoltageRise TimeFall Time (Typ)Turn-Off Delay TimeMin Output VoltageHeightRadiation HardeningREACH SVHCLead FreeView Compare
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IR2110-2Through Hole16-DIP (0.300, 7.62mm), 14 Leads16-PDIP-40°C~150°C TJTube2005Obsolete1 (Unlimited)3.3V~20VIR2110-2Non-Inverting25ns 17nsIndependent2Half-BridgeIGBT, N-Channel MOSFET2A 2A6V 9.5V500VNon-RoHS Compliant---------------------------------------------- -
Surface Mount14-SOIC (0.154, 3.90mm Width)14-SOIC-40°C~150°C TJTube2000Obsolete1 (Unlimited)10V~20VIR21074SInverting150ns 50nsIndependent2Half-BridgeIGBT, N-Channel MOSFET200mA 350mA0.8V 2.7V600VNon-RoHS Compliant---------------------------------------------
-
Surface Mount8-SOIC (0.154, 3.90mm Width)--40°C~150°C TJTube1996Obsolete1 (Unlimited)10V~20VIR2104SNon-Inverting100ns 50nsSynchronous2Half-BridgeIGBT, N-Channel MOSFET210mA 360mA0.8V 3V600VNon-RoHS CompliantYES8EAR99CMOSDUALGULL WINGNOT SPECIFIED115VNOT SPECIFIEDR-PDSO-G8Not QualifiedTOTEM-POLETRUESCHMITT TRIGGER0.36AYES1.75mm4.9mm3.9mm-------------------------
-
Through Hole8-DIP (0.300, 7.62mm)--40°C~150°C TJTube1996Active1 (Unlimited)10V~20VIR2101PBFNon-Inverting100ns 50nsIndependent-Half-BridgeIGBT, N-Channel MOSFET210mA 360mA0.8V 3V600VROHS3 Compliant-8EAR99CMOSDUAL--115V------0.36AYES-10.8966mm7.11mm12 WeeksThrough Hole8Through HoleMOSFET Drivers1W2620V360mA15V270μA1W210mA270μA220 ns50 ns20V170ns90 ns150 ns10V4.9276mmNoNo SVHCLead Free
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