IR2109SPBF

Infineon Technologies IR2109SPBF

Part Number:
IR2109SPBF
Manufacturer:
Infineon Technologies
Ventron No:
3837886-IR2109SPBF
Description:
IC DRIVER HALF BRIDGE 8SOIC
ECAD Model:
Datasheet:
IR2109SPBF

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Specifications
Infineon Technologies IR2109SPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IR2109SPBF.
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Operating Temperature
    -40°C~150°C TJ
  • Packaging
    Tube
  • Published
    1996
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    2 (1 Year)
  • Number of Terminations
    8
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Additional Feature
    FLOATING LOAD DRIVER; UNDER VOLTAGE LOCKOUT CIRCUIT
  • Subcategory
    MOSFET Drivers
  • Max Power Dissipation
    625mW
  • Technology
    CMOS
  • Voltage - Supply
    10V~20V
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Number of Functions
    1
  • Supply Voltage
    15V
  • Base Part Number
    IR2109SPBF
  • Number of Outputs
    2
  • Output Voltage
    20V
  • Max Output Current
    350mA
  • Operating Supply Voltage
    15V
  • Nominal Supply Current
    1.6mA
  • Power Dissipation
    625mW
  • Output Current
    200mA
  • Max Supply Current
    1.6mA
  • Propagation Delay
    950 ns
  • Input Type
    Non-Inverting
  • Turn On Delay Time
    70 ns
  • Max Output Voltage
    20V
  • Rise Time
    220ns
  • Fall Time (Typ)
    80 ns
  • Turn-Off Delay Time
    70 ns
  • Min Output Voltage
    10V
  • Rise / Fall Time (Typ)
    150ns 50ns
  • Channel Type
    Synchronous
  • Turn On Time
    0.95 μs
  • Output Peak Current Limit-Nom
    0.35A
  • Driven Configuration
    Half-Bridge
  • Gate Type
    IGBT, N-Channel MOSFET
  • Current - Peak Output (Source, Sink)
    200mA 350mA
  • High Side Driver
    YES
  • Logic Voltage - VIL, VIH
    0.8V 2.9V
  • High Side Voltage - Max (Bootstrap)
    600V
  • Height
    1.4986mm
  • Length
    4.9784mm
  • Width
    3.9878mm
  • Radiation Hardening
    No
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Contains Lead, Lead Free
Description
IR2109SPBF Overview
This particular component is manufactured by Infineon Technologies and falls under the category of PMIC - Gate Drivers. It is a chip specifically designed for power management and control, and is packaged in an 8-SOIC (0.154, 3.90mm Width) format. The packaging is in a tube form and the base part number is IR2109SPBF. The maximum output current for this chip is 200mA, while the maximum supply current is 1.6mA. The input type is non-inverting, meaning that the input signal is not reversed. The rise time for this chip is 220ns, indicating the speed at which the output signal changes. The channel type is synchronous, meaning that the input and output signals are synchronized. The gate type for this chip is IGBT (Insulated Gate Bipolar Transistor) and N-Channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), indicating its compatibility with these types of transistors. Lastly, this chip has a high-side driver, which means it is capable of driving high-side switches in a circuit.

IR2109SPBF Features
Embedded in the Tube package
Employing a gate type of IGBT, N-Channel MOSFET
8 pins
High-side voltage - Max (Bootstrap) of 600V
Maximum power dissipation of 625mW
FLOATING LOAD DRIVER; UNDER VOLTAGE LOCKOUT CIRCUIT

IR2109SPBF Applications
There are a lot of Infineon Technologies IR2109SPBF gate drivers applications.

A/D drivers
High-voltage isolated DC-DC converters
Video amplifiers
Portable Navigation Devices
Isolated Supplies for Motor Control
Commercial air-conditioning (CAC)
serial peripheral interface (SPI), I2C
Isolated switch mode power supplies (SMPS)
Pulse transformer drivers
3-Phase Motor Inverter Driver
IR2109SPBF More Descriptions
Tube IR2109SPBF Half-Bridge 1996 gate driver 220ns -40C~150C TJ 200mA 350mA 625mW
600 V half-bridge gate driver IC with shutdown, SOIC 8N, RoHSInfineon SCT
Driver 600V 0.35A 2-OUT High and Low Side Half Brdg Inv/Non-Inv 8-Pin SOIC N Tube
Surface Mount Tube Active EAR99 Gate Drivers ICs Non-Inverting 600V V 8-SOIC (0.154, 3.90mm Width) IR2109SPBF Half-Bridge
MOSFET Driver IC; Device Type:Half-Bridge; Supply Voltage Min:10V; Supply Voltage Max:25V; Termination Type:SMD; Package/Case:8-SOIC; No. of Pins:8; Operating Temperature Range:-40°C to 125°C; Delay Matching:60ns ;RoHS Compliant: Yes
DRIVER, MOSFET/IGBT, HALF BRIDGE, SMD; Device Type:MOSFET; Module Configuration:Half Bridge; Peak Output Current:350mA; Input Delay:750ns; Output Delay:200ns; Supply Voltage Range:10V to 20V; Driver Case Style:SOIC; No. of Pins:8; Operating Temperature Range:-40°C to 125°C; MSL:MSL 2 - 1 year; SVHC:No SVHC (20-Jun-2011); Base Number:2109; IC Generic Number:2109; Logic Function Number:2109; No. of Outputs:2; Offset Voltage:600V; Operating Temperature Max:125°C; Operating Temperature Min:-40°C; Output Current:200mA; Output Sink Current Min:250mA; Output Source Current Min:120mA; Output Voltage:620V; Output Voltage Max:20V; Output Voltage Min:10V; Package / Case:SOIC; Power Dissipation Pd:0.625W; Supply Voltage Max:20V; Supply Voltage Min:10V; Termination Type:SMD; Turn Off Time:200ns; Turn On Time:750ns
600 V Half Bridge Driver IC with typical 0.2 A source and 0.35 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PDIP, 14 Lead SOIC, and 14 Lead PDIP. | Summary of Features: Floating channel designed for bootstrap operation; Fully operational to 600 V; Tolerant to negative transient voltage; dV/dt immune; Gate drive supply range from 10 to 20 V; Undervoltage lockout for both channels; 3.3 V, 5 V, and 15 V logic input compatible; Cross-conduction prevention logic; Matched propagation delay for both channels; High side output in phase with IN input; Logic and power ground /- 5 V offset; Internal 540ns dead-time; Lower di/dt gate driver for better noise immunity; Shut down input turns off both channels
Product Comparison
The three parts on the right have similar specifications to IR2109SPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Max Power Dissipation
    Technology
    Voltage - Supply
    Terminal Position
    Terminal Form
    Number of Functions
    Supply Voltage
    Base Part Number
    Number of Outputs
    Output Voltage
    Max Output Current
    Operating Supply Voltage
    Nominal Supply Current
    Power Dissipation
    Output Current
    Max Supply Current
    Propagation Delay
    Input Type
    Turn On Delay Time
    Max Output Voltage
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Min Output Voltage
    Rise / Fall Time (Typ)
    Channel Type
    Turn On Time
    Output Peak Current Limit-Nom
    Driven Configuration
    Gate Type
    Current - Peak Output (Source, Sink)
    High Side Driver
    Logic Voltage - VIL, VIH
    High Side Voltage - Max (Bootstrap)
    Height
    Length
    Width
    Radiation Hardening
    REACH SVHC
    RoHS Status
    Lead Free
    Supplier Device Package
    Number of Drivers
    Surface Mount
    Peak Reflow Temperature (Cel)
    Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Output Characteristics
    Output Polarity
    Input Characteristics
    Height Seated (Max)
    Power Supplies
    View Compare
  • IR2109SPBF
    IR2109SPBF
    12 Weeks
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    -40°C~150°C TJ
    Tube
    1996
    e3
    Active
    2 (1 Year)
    8
    SMD/SMT
    EAR99
    Matte Tin (Sn)
    FLOATING LOAD DRIVER; UNDER VOLTAGE LOCKOUT CIRCUIT
    MOSFET Drivers
    625mW
    CMOS
    10V~20V
    DUAL
    GULL WING
    1
    15V
    IR2109SPBF
    2
    20V
    350mA
    15V
    1.6mA
    625mW
    200mA
    1.6mA
    950 ns
    Non-Inverting
    70 ns
    20V
    220ns
    80 ns
    70 ns
    10V
    150ns 50ns
    Synchronous
    0.95 μs
    0.35A
    Half-Bridge
    IGBT, N-Channel MOSFET
    200mA 350mA
    YES
    0.8V 2.9V
    600V
    1.4986mm
    4.9784mm
    3.9878mm
    No
    No SVHC
    ROHS3 Compliant
    Contains Lead, Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IR21074S
    -
    -
    Surface Mount
    14-SOIC (0.154, 3.90mm Width)
    -
    -40°C~150°C TJ
    Tube
    2000
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    10V~20V
    -
    -
    -
    -
    IR21074S
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Inverting
    -
    -
    -
    -
    -
    -
    150ns 50ns
    Independent
    -
    -
    Half-Bridge
    IGBT, N-Channel MOSFET
    200mA 350mA
    -
    0.8V 2.7V
    600V
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    14-SOIC
    2
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IR2104S
    -
    -
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    -40°C~150°C TJ
    Tube
    1996
    -
    Obsolete
    1 (Unlimited)
    8
    -
    EAR99
    -
    -
    -
    -
    CMOS
    10V~20V
    DUAL
    GULL WING
    1
    15V
    IR2104S
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-Inverting
    -
    -
    -
    -
    -
    -
    100ns 50ns
    Synchronous
    -
    0.36A
    Half-Bridge
    IGBT, N-Channel MOSFET
    210mA 360mA
    YES
    0.8V 3V
    600V
    -
    4.9mm
    3.9mm
    -
    -
    Non-RoHS Compliant
    -
    -
    2
    YES
    NOT SPECIFIED
    NOT SPECIFIED
    R-PDSO-G8
    Not Qualified
    TOTEM-POLE
    TRUE
    SCHMITT TRIGGER
    1.75mm
    -
  • IR2101PBF
    12 Weeks
    Through Hole
    Through Hole
    8-DIP (0.300, 7.62mm)
    8
    -40°C~150°C TJ
    Tube
    1996
    -
    Active
    1 (Unlimited)
    8
    Through Hole
    EAR99
    -
    -
    MOSFET Drivers
    1W
    CMOS
    10V~20V
    DUAL
    -
    1
    15V
    IR2101PBF
    2
    620V
    360mA
    -
    270μA
    1W
    210mA
    270μA
    220 ns
    Non-Inverting
    50 ns
    20V
    170ns
    90 ns
    150 ns
    10V
    100ns 50ns
    Independent
    -
    0.36A
    Half-Bridge
    IGBT, N-Channel MOSFET
    210mA 360mA
    YES
    0.8V 3V
    600V
    4.9276mm
    10.8966mm
    7.11mm
    No
    No SVHC
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    15V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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