Infineon Technologies IR2106SPBF

Tube IR2106SPBF Half-Bridge 1996 gate driver 220ns -40C~150C TJ 200mA 350mA 625mW
600 V high-side and low-side gate driver IC, SOIC 8N, RoHSInfineon SCT
IR2106 Series 20 V 200 mA Surface Mount Dual High and Low Side Driver - SOIC-8
MOSFET DRVR 600V 0.35A 2-OUT Hi/Lo Side Non-Inv 8-Pin SOIC Tube - Rail/Tube
HIGH AND LOW SIDE DRIVER, SOFTTURN-ON, NONINVERTING INPUTS IN A 8-LEAD SOIC PACK | Infineon IR2106SPBF
Bridge Driver IC Operating temperature: -40... 125 °C Output voltage: 10...20 V Power supply: 10...20 V Input: logic input Package: SO-8 Sink output current: 0.35 A Source output current: 0.2 A
No. of Channels:2Channels; Driver Configuration:High Side and Low Side; Power Switch Type:IGBT, MOSFET; No. of Pins:8Pins; IC Case / Package:SOIC; Input Type:Non-Inverting; Source Current:200mA; Sink Current:350mA; Input Delay:220ns RoHS Compliant: Yes
600 V High and Low Side Driver IC with typical 0.2 A source and 0.35 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PDIP, 14 Lead SOIC, and 14 Lead PDIP. | Summary of Features: Floating channel designed for bootstrap operation; Fully operational to 600 V; Tolerant to negative transient voltage; dV/dt immune; Gate drive supply range from 10 to 20 V; Undervoltage lockout; 3.3 V, 5 V, and 15 V logic input compatible; Matched propagation delay for both channels; Logic and power ground /- 5 V offset; Lower di/dt gate driver for better noise immunity; Outputs in phase with inputs
DRIVER, MOSFET HIGH/LOW, 2106, SOIC8; Device Type:High Side / Low Side; Module Configuration:High Side / Low Side; Peak Output Current:350mA; Input Delay:220ns; Output Delay:200ns; Supply Voltage Range:10V to 20V; Driver Case Style:SOIC; No. of Pins:8; Operating Temperature Range:-40°C to 125°C; MSL:MSL 2 - 1 year; SVHC:No SVHC (20-Jun-2011); Base Number:2106; IC Generic Number:2106; Logic Function Number:2106; No. of Outputs:2; Offset Voltage:600V; Operating Temperature Max:125°C; Operating Temperature Min:-40°C; Output Current:200mA; Output Sink Current Min:250mA; Output Source Current Min:120mA; Output Voltage:620V; Output Voltage Max:20V; Output Voltage Min:10V; Package / Case:SOIC; Power Dissipation Pd:0.625W; Supply Voltage Max:20V; Supply Voltage Min:10V; Termination Type:SMD; Turn Off Time:200ns; Turn On Time:220ns
The IR2106(4)(S) are high voltage,high speed power MOSFET and IGBT drivers with independent highand low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output,down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.