Infineon Technologies IR2104SPBF
- Part Number:
- IR2104SPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3735269-IR2104SPBF
- Description:
- IC DRIVER HIGH/LOW SIDE 8SOIC
- Datasheet:
- IR2104SPBF
Infineon Technologies IR2104SPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IR2104SPBF.
- Factory Lead Time12 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Operating Temperature-40°C~150°C TJ
- PackagingTube
- Published1996
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)2 (1 Year)
- Number of Terminations8
- TerminationSMD/SMT
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryMOSFET Drivers
- Max Power Dissipation625mW
- TechnologyCMOS
- Voltage - Supply10V~20V
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Number of Functions1
- Supply Voltage15V
- Reflow Temperature-Max (s)30
- Base Part NumberIR2104SPBF
- Number of Outputs2
- Output Voltage10V
- Max Output Current360mA
- Power Supplies15V
- Nominal Supply Current150μA
- Power Dissipation625mW
- Output Current130mA
- Max Supply Current270μA
- Propagation Delay820 ns
- Input TypeNon-Inverting
- Turn On Delay Time60 ns
- Max Output Voltage20V
- Rise Time170ns
- Fall Time (Typ)90 ns
- Turn-Off Delay Time60 ns
- Min Output Voltage10V
- Rise / Fall Time (Typ)100ns 50ns
- Channel TypeSynchronous
- Output Peak Current Limit-Nom0.36A
- Driven ConfigurationHalf-Bridge
- Gate TypeIGBT, N-Channel MOSFET
- Current - Peak Output (Source, Sink)210mA 360mA
- High Side DriverYES
- Logic Voltage - VIL, VIH0.8V 3V
- High Side Voltage - Max (Bootstrap)600V
- Height1.4986mm
- Length4.9784mm
- Width3.9878mm
- Radiation HardeningNo
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeContains Lead, Lead Free
IR2104SPBF Overview
There is greater flexibility with the 8-SOIC (0.154, 3.90mm Width) package.There is a package in the form of Tube.The device is mounted in the direction of Surface Mount.WGate driversh a 10V~20V supply voltage, gate drivers is able to demonstrate Gate driverss superiorGate driversy.This device is designed with a IGBT, N-Channel MOSFET gate type.This device can operate at temperatures up to -40°C~150°C TJ.A type of Non-Inverting is used for input in this program.Its configuration is based on a total of 8 terminations.Mosfet driver contains a variety of related parts under Mosfet drivers base part number IR2104SPBF.Mounting the device requires Surface Mount.At the time of design, it is configured with 8 pins.A voltage of 15V is required for its operation.As a maximum, there is 360mA limit to the output current.Mosfet driver includes a number of useful electronic components in Mosfet drivers subcategory of MOSFET Drivers.Maximum (Bootstrap) voltage is 600V.The basis of this system consists of 2 outputs.The output current of this device can be set to 130mA.Its maximum power dissipation of 625mW shows its power loss capacity without overheating.The supply current should be kept at 270μA to ensure higher stability.With its power supplies of 15V, it solves the power supply problems for diverse applications.When this voltage is produced, it is marked as 10V.Mosfet driver ic is recommended to keep the maximum output voltage at 20V.
IR2104SPBF Features
Embedded in the Tube package
Employing a gate type of IGBT, N-Channel MOSFET
8 pins
High-side voltage - Max (Bootstrap) of 600V
Maximum power dissipation of 625mW
IR2104SPBF Applications
There are a lot of Infineon Technologies IR2104SPBF gate drivers applications.
Welding
A/D drivers
UPS systems
High current laser/LED systems
3-Phase Motor Inverter Driver
Active Clamp Flyback or Forward and Synchronous Rectifier
Broadcast equipment
Line drivers
Portable Navigation Devices
High frequency line drivers
There is greater flexibility with the 8-SOIC (0.154, 3.90mm Width) package.There is a package in the form of Tube.The device is mounted in the direction of Surface Mount.WGate driversh a 10V~20V supply voltage, gate drivers is able to demonstrate Gate driverss superiorGate driversy.This device is designed with a IGBT, N-Channel MOSFET gate type.This device can operate at temperatures up to -40°C~150°C TJ.A type of Non-Inverting is used for input in this program.Its configuration is based on a total of 8 terminations.Mosfet driver contains a variety of related parts under Mosfet drivers base part number IR2104SPBF.Mounting the device requires Surface Mount.At the time of design, it is configured with 8 pins.A voltage of 15V is required for its operation.As a maximum, there is 360mA limit to the output current.Mosfet driver includes a number of useful electronic components in Mosfet drivers subcategory of MOSFET Drivers.Maximum (Bootstrap) voltage is 600V.The basis of this system consists of 2 outputs.The output current of this device can be set to 130mA.Its maximum power dissipation of 625mW shows its power loss capacity without overheating.The supply current should be kept at 270μA to ensure higher stability.With its power supplies of 15V, it solves the power supply problems for diverse applications.When this voltage is produced, it is marked as 10V.Mosfet driver ic is recommended to keep the maximum output voltage at 20V.
IR2104SPBF Features
Embedded in the Tube package
Employing a gate type of IGBT, N-Channel MOSFET
8 pins
High-side voltage - Max (Bootstrap) of 600V
Maximum power dissipation of 625mW
IR2104SPBF Applications
There are a lot of Infineon Technologies IR2104SPBF gate drivers applications.
Welding
A/D drivers
UPS systems
High current laser/LED systems
3-Phase Motor Inverter Driver
Active Clamp Flyback or Forward and Synchronous Rectifier
Broadcast equipment
Line drivers
Portable Navigation Devices
High frequency line drivers
IR2104SPBF More Descriptions
Driver 600V 0.36A 2-OUT High and Low Side Half Brdg Inv/Non-Inv 8-Pin SOIC N Tube
Tube IR2104SPBF Half-Bridge 1996 gate driver 170ns -40C~150C TJ 210mA 360mA 625mW
600 V half-bridge gate driver IC with shutdown, SOIC 8N, RoHS
IR2104S Series 20 V 210 mA Through Hole Half Bridge Driver - SOIC-8
MOSFET Half-Bridge Gate Driver 0,27A SO8 IR 2104 S PBF
MOSFET Driver IC; Device Type:Half-Bridge; Supply Voltage Min:10V; Supply Voltage Max:25V; Termination Type:SMD; Package/Case:8-SOIC; No. of Pins:8; Operating Temperature Range:-55°C to 150°C; Delay Matching:60ns ;RoHS Compliant: Yes
DRIVER, MOSFET/IGBT HALF BRIDGE, SMD; Device Type:MOSFET; Module Configuration:Half Bridge; Peak Output Current:360mA; Input Delay:680ns; Output Delay:150ns; Supply Voltage Range:10V to 20V; Driver Case Style:SOIC; No. of Pins:8; Operating Temperature Range:-55°C to 150°C; MSL:MSL 2 - 1 year; SVHC:No SVHC (20-Jun-2011); Base Number:2104; IC Generic Number:2104; Logic Function Number:2104; No. of Outputs:2; Offset Voltage:600V; Operating Temperature Max:150°C; Operating Temperature Min:-55°C; Output Current:210mA; Output Sink Current Min:270mA; Output Source Current Min:130mA; Output Voltage:620V; Output Voltage Max:20V; Output Voltage Min:10V; Package / Case:SOIC; Power Dissipation Pd:0.625W; Supply Voltage Max:20V; Supply Voltage Min:10V; Termination Type:SMD; Turn Off Time:150ns; Turn On Time:680ns
600 V Half Bridge Driver IC with typical 0.21 A source and 0.36 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead SOIC. | Summary of Features: Floating channel designed for bootstrap operation; Fully operational to 600 V; Tolerant to negative transient voltage; dV/dt immune; Gate drive supply range from 10 to 20 V; Undervoltage lockout; 3.3 V, 5 V, and 15 V logic input compatible; Cross-conduction prevention logic; Matched propagation delay for both channels; Internal set deadtime; High side output in phase with HIN input; Shut down input turns off both channels; Matched propagation delay for both channels
Tube IR2104SPBF Half-Bridge 1996 gate driver 170ns -40C~150C TJ 210mA 360mA 625mW
600 V half-bridge gate driver IC with shutdown, SOIC 8N, RoHS
IR2104S Series 20 V 210 mA Through Hole Half Bridge Driver - SOIC-8
MOSFET Half-Bridge Gate Driver 0,27A SO8 IR 2104 S PBF
MOSFET Driver IC; Device Type:Half-Bridge; Supply Voltage Min:10V; Supply Voltage Max:25V; Termination Type:SMD; Package/Case:8-SOIC; No. of Pins:8; Operating Temperature Range:-55°C to 150°C; Delay Matching:60ns ;RoHS Compliant: Yes
DRIVER, MOSFET/IGBT HALF BRIDGE, SMD; Device Type:MOSFET; Module Configuration:Half Bridge; Peak Output Current:360mA; Input Delay:680ns; Output Delay:150ns; Supply Voltage Range:10V to 20V; Driver Case Style:SOIC; No. of Pins:8; Operating Temperature Range:-55°C to 150°C; MSL:MSL 2 - 1 year; SVHC:No SVHC (20-Jun-2011); Base Number:2104; IC Generic Number:2104; Logic Function Number:2104; No. of Outputs:2; Offset Voltage:600V; Operating Temperature Max:150°C; Operating Temperature Min:-55°C; Output Current:210mA; Output Sink Current Min:270mA; Output Source Current Min:130mA; Output Voltage:620V; Output Voltage Max:20V; Output Voltage Min:10V; Package / Case:SOIC; Power Dissipation Pd:0.625W; Supply Voltage Max:20V; Supply Voltage Min:10V; Termination Type:SMD; Turn Off Time:150ns; Turn On Time:680ns
600 V Half Bridge Driver IC with typical 0.21 A source and 0.36 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead SOIC. | Summary of Features: Floating channel designed for bootstrap operation; Fully operational to 600 V; Tolerant to negative transient voltage; dV/dt immune; Gate drive supply range from 10 to 20 V; Undervoltage lockout; 3.3 V, 5 V, and 15 V logic input compatible; Cross-conduction prevention logic; Matched propagation delay for both channels; Internal set deadtime; High side output in phase with HIN input; Shut down input turns off both channels; Matched propagation delay for both channels
The three parts on the right have similar specifications to IR2104SPBF.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeTerminal FinishSubcategoryMax Power DissipationTechnologyVoltage - SupplyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageReflow Temperature-Max (s)Base Part NumberNumber of OutputsOutput VoltageMax Output CurrentPower SuppliesNominal Supply CurrentPower DissipationOutput CurrentMax Supply CurrentPropagation DelayInput TypeTurn On Delay TimeMax Output VoltageRise TimeFall Time (Typ)Turn-Off Delay TimeMin Output VoltageRise / Fall Time (Typ)Channel TypeOutput Peak Current Limit-NomDriven ConfigurationGate TypeCurrent - Peak Output (Source, Sink)High Side DriverLogic Voltage - VIL, VIHHigh Side Voltage - Max (Bootstrap)HeightLengthWidthRadiation HardeningREACH SVHCRoHS StatusLead FreeSurface MountJESD-30 CodeQualification StatusOutput CharacteristicsOutput PolarityInput CharacteristicsNumber of DriversHeight Seated (Max)Supplier Device PackageView Compare
-
IR2104SPBF12 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8-40°C~150°C TJTube1996e3Active2 (1 Year)8SMD/SMTEAR99Matte Tin (Sn)MOSFET Drivers625mWCMOS10V~20VDUALGULL WING260115V30IR2104SPBF210V360mA15V150μA625mW130mA270μA820 nsNon-Inverting60 ns20V170ns90 ns60 ns10V100ns 50nsSynchronous0.36AHalf-BridgeIGBT, N-Channel MOSFET210mA 360mAYES0.8V 3V600V1.4986mm4.9784mm3.9878mmNoNo SVHCROHS3 CompliantContains Lead, Lead Free----------
-
--Surface Mount8-SOIC (0.154, 3.90mm Width)--40°C~150°C TJTube1996-Obsolete1 (Unlimited)8-EAR99---CMOS10V~20VDUALGULL WINGNOT SPECIFIED115VNOT SPECIFIEDIR2102S---------Inverting------100ns 50nsIndependent0.36AHalf-BridgeIGBT, N-Channel MOSFET210mA 360mAYES0.8V 3V600V-4.9mm3.9mm--Non-RoHS Compliant-YESR-PDSO-G8Not QualifiedTOTEM-POLEINVERTEDSCHMITT TRIGGER21.75mm-
-
--Surface Mount14-SOIC (0.154, 3.90mm Width)--40°C~150°C TJTube2000-Obsolete1 (Unlimited)-------10V~20V------IR21074S---------Inverting------150ns 50nsIndependent-Half-BridgeIGBT, N-Channel MOSFET200mA 350mA-0.8V 2.7V600V-----Non-RoHS Compliant-------2-14-SOIC
-
--Surface Mount8-SOIC (0.154, 3.90mm Width)--40°C~150°C TJTube1996-Obsolete1 (Unlimited)8-EAR99---CMOS10V~20VDUALGULL WINGNOT SPECIFIED115VNOT SPECIFIEDIR2104S---------Non-Inverting------100ns 50nsSynchronous0.36AHalf-BridgeIGBT, N-Channel MOSFET210mA 360mAYES0.8V 3V600V-4.9mm3.9mm--Non-RoHS Compliant-YESR-PDSO-G8Not QualifiedTOTEM-POLETRUESCHMITT TRIGGER21.75mm-
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
16 January 2024
AD9361BBCZ RF Transceiver Manufacturer, Characteristics, Applications and Package
Ⅰ. Overview of AD9361BBCZⅡ. Who produced AD9361BBCZ?Ⅲ. Technical parameters of AD9361BBCZⅣ. What are the characteristics of AD9361BBCZ?Ⅴ. Market trend of AD9361BBCZⅥ. Where is AD9361BBCZ used?Ⅶ. How to use... -
16 January 2024
PDIUSBD12 Structure, Pin Configuration, Characteristics and Applications
Ⅰ. Overview of PDIUSBD12Ⅱ. Design of PDIUSBD12Ⅲ. Internal structure of PDIUSBD12Ⅳ. Pin configuration of PDIUSBD12Ⅴ. What are the characteristics of PDIUSBD12?Ⅵ. PDIUSBD12 instructionsⅦ. What are the applications of... -
17 January 2024
MCF5282CVM66 Microcontroller Replacements, Structure, Working Principle and Other Details
Ⅰ. MCF5282CVM66 overviewⅡ. Structure and working principle of MCF5282CVM66Ⅲ. Specifications of MCF5282CVM66Ⅳ. What are the advantages and disadvantages of MCF5282CVM66?Ⅴ. Purpose of MCF5282CVM66Ⅵ. Market trend of MCF5282CVM66Ⅶ. Precautions... -
17 January 2024
DS18B20 Digital Temperature Sensor Structure, Features, Applications and More
Ⅰ. What is DS18B20?Ⅱ. Internal structure of DS18B20Ⅲ. Features of DS18B20 sensorⅣ. How does DS18B20 work?Ⅴ. Symbol, footprint and pin configuration of DS18B20Ⅵ. Driving principle of DS18B20Ⅶ. Where...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.