Infineon Technologies IR2104PBF
- Part Number:
- IR2104PBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3837968-IR2104PBF
- Description:
- IC DRIVER HIGH/LOW SIDE 8DIP
- Datasheet:
- IR2104PBF
Infineon Technologies IR2104PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IR2104PBF.
- Factory Lead Time12 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / Case8-DIP (0.300, 7.62mm)
- Number of Pins8
- Operating Temperature-40°C~150°C TJ
- PackagingTube
- Published1996
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- TerminationThrough Hole
- ECCN CodeEAR99
- SubcategoryMOSFET Drivers
- Max Power Dissipation1W
- TechnologyCMOS
- Voltage - Supply10V~20V
- Terminal PositionDUAL
- Number of Functions1
- Supply Voltage15V
- Base Part NumberIR2104PBF
- Number of Outputs2
- Output Voltage620V
- Max Output Current360mA
- Power Supplies15V
- Nominal Supply Current270μA
- Power Dissipation1W
- Output Current210mA
- Max Supply Current270μA
- Propagation Delay820 ns
- Input TypeNon-Inverting
- Turn On Delay Time60 ns
- Max Output Voltage20V
- Rise Time170ns
- Fall Time (Typ)90 ns
- Turn-Off Delay Time90 ns
- Min Output Voltage10V
- Rise / Fall Time (Typ)100ns 50ns
- Channel TypeSynchronous
- Output Peak Current Limit-Nom0.36A
- Driven ConfigurationHalf-Bridge
- Gate TypeIGBT, N-Channel MOSFET
- Current - Peak Output (Source, Sink)210mA 360mA
- High Side DriverYES
- Logic Voltage - VIL, VIH0.8V 3V
- High Side Voltage - Max (Bootstrap)600V
- Height4.9276mm
- Length10.8966mm
- Width7.11mm
- Radiation HardeningNo
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeContains Lead, Lead Free
IR2104PBF Overview
The 8-DIP (0.300, 7.62mm) package offers greater flexibility.A packaging method of Tube is indicated.In the direction of Through Hole, gate drivers is mounted.WGate driversh a 10V~20V supply voltage, gate drivers is able to demonstrate Gate driverss superiorGate driversy.Gate drivers is designed wGate driversh a IGBT, N-Channel MOSFET gate.There is a temperature range for this device of -40°C~150°C TJ.Mosfet driver uses Non-Inverting as Mosfet drivers input type.The configuration is based on 8 terminations.There are various related parts under its base part number IR2104PBF.Mosfet driver is mounted using Through Hole.Mosfet driver is configured wMosfet driverh 8 pins when designing.In addition, it is specifically designed to operate with a supply voltage of 15V.360mA is the maximum output current.This subcategory of MOSFET Drivers has a number of useful electronic components.Max (Bootstrap) can be as high as 600V.Based on its basis, it integrates 2 outputs.This device is capable of delivering 210mA current.This device has a maximum power dissipation of 1W, indicating that it is capable of reducing power loss without overheating.For higher stability, the supply current should be kept at 270μA.The power supply 15V of the product solves the power supply problem for a variety of applications.Mosfet gate drivers produces a voltage of 620V.A maximum output voltage of 20V should be maintained.
IR2104PBF Features
Embedded in the Tube package
Employing a gate type of IGBT, N-Channel MOSFET
8 pins
High-side voltage - Max (Bootstrap) of 600V
Maximum power dissipation of 1W
IR2104PBF Applications
There are a lot of Infineon Technologies IR2104PBF gate drivers applications.
serial peripheral interface (SPI), I2C
AC-DC Inverters
Solar inverters
High-voltage isolated DC-DC converters
Motor Controls
High power buffers
Portable Media Players
High frequency line drivers
Driving GaN Power Transistors used in Full or Half?Bridge, LLC,
Active filtering
The 8-DIP (0.300, 7.62mm) package offers greater flexibility.A packaging method of Tube is indicated.In the direction of Through Hole, gate drivers is mounted.WGate driversh a 10V~20V supply voltage, gate drivers is able to demonstrate Gate driverss superiorGate driversy.Gate drivers is designed wGate driversh a IGBT, N-Channel MOSFET gate.There is a temperature range for this device of -40°C~150°C TJ.Mosfet driver uses Non-Inverting as Mosfet drivers input type.The configuration is based on 8 terminations.There are various related parts under its base part number IR2104PBF.Mosfet driver is mounted using Through Hole.Mosfet driver is configured wMosfet driverh 8 pins when designing.In addition, it is specifically designed to operate with a supply voltage of 15V.360mA is the maximum output current.This subcategory of MOSFET Drivers has a number of useful electronic components.Max (Bootstrap) can be as high as 600V.Based on its basis, it integrates 2 outputs.This device is capable of delivering 210mA current.This device has a maximum power dissipation of 1W, indicating that it is capable of reducing power loss without overheating.For higher stability, the supply current should be kept at 270μA.The power supply 15V of the product solves the power supply problem for a variety of applications.Mosfet gate drivers produces a voltage of 620V.A maximum output voltage of 20V should be maintained.
IR2104PBF Features
Embedded in the Tube package
Employing a gate type of IGBT, N-Channel MOSFET
8 pins
High-side voltage - Max (Bootstrap) of 600V
Maximum power dissipation of 1W
IR2104PBF Applications
There are a lot of Infineon Technologies IR2104PBF gate drivers applications.
serial peripheral interface (SPI), I2C
AC-DC Inverters
Solar inverters
High-voltage isolated DC-DC converters
Motor Controls
High power buffers
Portable Media Players
High frequency line drivers
Driving GaN Power Transistors used in Full or Half?Bridge, LLC,
Active filtering
IR2104PBF More Descriptions
Tube IR2104 Half-Bridge 1996 gate driver 100ns 50ns -40C~150C TJ 210mA 360mA 0.8V 3V
IR2104 Series 20 V 210 mA Through Hole Half Bridge Driver - PDIP-8
600 V half-bridge gate driver IC with shutdown, PDIP8, RoHSInfineon SCT
Half-Bridge Non-Inv. Driver, Vmax 600V, Io /Io- 130/270mA, tON/OFF 680/150ns;
MOSFET Driver IC; Device Type:Half-Bridge; Supply Voltage Min:10V; Supply Voltage Max:25V; Package/Case:8-DIP; No. of Pins:8; Operating Temperature Range:-55°C to 150°C; Fall Time, tf:50ns ;RoHS Compliant: Yes
600 V Half Bridge Driver IC with typical 0.21 A source and 0.36 A sink currents in 8 Lead PDIP package for IGBTs and MOSFETs. Also available in 8 Lead SOIC. | Summary of Features: Floating channel designed for bootstrap operation; Fully operational to 600 V; Tolerant to negative transient voltage; dV/dt immune; Gate drive supply range from 10 to 20 V; Undervoltage lockout; 3.3 V, 5 V, and 15 V logic input compatible; Cross-conduction prevention logic; Matched propagation delay for both channels; Internal set deadtime; High side output in phase with HIN input; Shut down input turns off both channels; Matched propagation delay for both channels
IC, DRIVER, MOSFET, 2104, DIP8; Driver Configuration: Half Bridge; Peak Output Current: 360mA; Supply Voltage Min: 10V; Supply Voltage Max: 20V; Driver Case Style: DIP; No. of Pins: 8Pins; Input Delay: 680ns; Output Delay: 150ns; Operating Temperature Min: -40°C; Operating Temperature Max: 125°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Base Number: 2104; Device Type: MOSFET; IC Generic Number: 2104; Module Configuration: Half Bridge; No. of Outputs: 2Outputs; Offset Voltage: 600V; Operating Temperature Range: -40°C to 125°C; Output Current: 210mA; Output Current Max: 100mA; Output Sink Current Min: 210mA; Output Source Current Min: 100mA; Output Voltage: 620V; Output Voltage Max: 20V; Output Voltage Min: 10V; Power Dissipation Pd: 1W; Supply Voltage Range: 10V to 20V; Termination Type: Through Hole; Turn Off Time: 90ns; Turn On Time: 600ns
IR2104 Series 20 V 210 mA Through Hole Half Bridge Driver - PDIP-8
600 V half-bridge gate driver IC with shutdown, PDIP8, RoHSInfineon SCT
Half-Bridge Non-Inv. Driver, Vmax 600V, Io /Io- 130/270mA, tON/OFF 680/150ns;
MOSFET Driver IC; Device Type:Half-Bridge; Supply Voltage Min:10V; Supply Voltage Max:25V; Package/Case:8-DIP; No. of Pins:8; Operating Temperature Range:-55°C to 150°C; Fall Time, tf:50ns ;RoHS Compliant: Yes
600 V Half Bridge Driver IC with typical 0.21 A source and 0.36 A sink currents in 8 Lead PDIP package for IGBTs and MOSFETs. Also available in 8 Lead SOIC. | Summary of Features: Floating channel designed for bootstrap operation; Fully operational to 600 V; Tolerant to negative transient voltage; dV/dt immune; Gate drive supply range from 10 to 20 V; Undervoltage lockout; 3.3 V, 5 V, and 15 V logic input compatible; Cross-conduction prevention logic; Matched propagation delay for both channels; Internal set deadtime; High side output in phase with HIN input; Shut down input turns off both channels; Matched propagation delay for both channels
IC, DRIVER, MOSFET, 2104, DIP8; Driver Configuration: Half Bridge; Peak Output Current: 360mA; Supply Voltage Min: 10V; Supply Voltage Max: 20V; Driver Case Style: DIP; No. of Pins: 8Pins; Input Delay: 680ns; Output Delay: 150ns; Operating Temperature Min: -40°C; Operating Temperature Max: 125°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Base Number: 2104; Device Type: MOSFET; IC Generic Number: 2104; Module Configuration: Half Bridge; No. of Outputs: 2Outputs; Offset Voltage: 600V; Operating Temperature Range: -40°C to 125°C; Output Current: 210mA; Output Current Max: 100mA; Output Sink Current Min: 210mA; Output Source Current Min: 100mA; Output Voltage: 620V; Output Voltage Max: 20V; Output Voltage Min: 10V; Power Dissipation Pd: 1W; Supply Voltage Range: 10V to 20V; Termination Type: Through Hole; Turn Off Time: 90ns; Turn On Time: 600ns
The three parts on the right have similar specifications to IR2104PBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeSubcategoryMax Power DissipationTechnologyVoltage - SupplyTerminal PositionNumber of FunctionsSupply VoltageBase Part NumberNumber of OutputsOutput VoltageMax Output CurrentPower SuppliesNominal Supply CurrentPower DissipationOutput CurrentMax Supply CurrentPropagation DelayInput TypeTurn On Delay TimeMax Output VoltageRise TimeFall Time (Typ)Turn-Off Delay TimeMin Output VoltageRise / Fall Time (Typ)Channel TypeOutput Peak Current Limit-NomDriven ConfigurationGate TypeCurrent - Peak Output (Source, Sink)High Side DriverLogic Voltage - VIL, VIHHigh Side Voltage - Max (Bootstrap)HeightLengthWidthRadiation HardeningREACH SVHCRoHS StatusLead FreeNumber of DriversSupplier Device PackageView Compare
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IR2104PBF12 WeeksThrough HoleThrough Hole8-DIP (0.300, 7.62mm)8-40°C~150°C TJTube1996Active1 (Unlimited)8Through HoleEAR99MOSFET Drivers1WCMOS10V~20VDUAL115VIR2104PBF2620V360mA15V270μA1W210mA270μA820 nsNon-Inverting60 ns20V170ns90 ns90 ns10V100ns 50nsSynchronous0.36AHalf-BridgeIGBT, N-Channel MOSFET210mA 360mAYES0.8V 3V600V4.9276mm10.8966mm7.11mmNoNo SVHCROHS3 CompliantContains Lead, Lead Free---
-
--Through Hole8-DIP (0.300, 7.62mm)--40°C~150°C TJTube2000Obsolete1 (Unlimited)------10V~20V---IR2107---------Inverting------150ns 50nsIndependent-Half-BridgeIGBT, N-Channel MOSFET200mA 350mA-0.8V 2.7V600V-----Non-RoHS Compliant-2-
-
--Surface Mount14-SOIC (0.154, 3.90mm Width)--40°C~150°C TJTube2000Obsolete1 (Unlimited)------10V~20V---IR21074S---------Inverting------150ns 50nsIndependent-Half-BridgeIGBT, N-Channel MOSFET200mA 350mA-0.8V 2.7V600V-----Non-RoHS Compliant-214-SOIC
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12 WeeksThrough HoleThrough Hole8-DIP (0.300, 7.62mm)8-40°C~150°C TJTube1996Active1 (Unlimited)8Through HoleEAR99MOSFET Drivers1WCMOS10V~20VDUAL115VIR2101PBF2620V360mA15V270μA1W210mA270μA220 nsNon-Inverting50 ns20V170ns90 ns150 ns10V100ns 50nsIndependent0.36AHalf-BridgeIGBT, N-Channel MOSFET210mA 360mAYES0.8V 3V600V4.9276mm10.8966mm7.11mmNoNo SVHCROHS3 CompliantLead Free--
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