IR2104PBF

Infineon Technologies IR2104PBF

Part Number:
IR2104PBF
Manufacturer:
Infineon Technologies
Ventron No:
3837968-IR2104PBF
Description:
IC DRIVER HIGH/LOW SIDE 8DIP
ECAD Model:
Datasheet:
IR2104PBF

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Specifications
Infineon Technologies IR2104PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IR2104PBF.
  • Factory Lead Time
    12 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    8-DIP (0.300, 7.62mm)
  • Number of Pins
    8
  • Operating Temperature
    -40°C~150°C TJ
  • Packaging
    Tube
  • Published
    1996
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • Termination
    Through Hole
  • ECCN Code
    EAR99
  • Subcategory
    MOSFET Drivers
  • Max Power Dissipation
    1W
  • Technology
    CMOS
  • Voltage - Supply
    10V~20V
  • Terminal Position
    DUAL
  • Number of Functions
    1
  • Supply Voltage
    15V
  • Base Part Number
    IR2104PBF
  • Number of Outputs
    2
  • Output Voltage
    620V
  • Max Output Current
    360mA
  • Power Supplies
    15V
  • Nominal Supply Current
    270μA
  • Power Dissipation
    1W
  • Output Current
    210mA
  • Max Supply Current
    270μA
  • Propagation Delay
    820 ns
  • Input Type
    Non-Inverting
  • Turn On Delay Time
    60 ns
  • Max Output Voltage
    20V
  • Rise Time
    170ns
  • Fall Time (Typ)
    90 ns
  • Turn-Off Delay Time
    90 ns
  • Min Output Voltage
    10V
  • Rise / Fall Time (Typ)
    100ns 50ns
  • Channel Type
    Synchronous
  • Output Peak Current Limit-Nom
    0.36A
  • Driven Configuration
    Half-Bridge
  • Gate Type
    IGBT, N-Channel MOSFET
  • Current - Peak Output (Source, Sink)
    210mA 360mA
  • High Side Driver
    YES
  • Logic Voltage - VIL, VIH
    0.8V 3V
  • High Side Voltage - Max (Bootstrap)
    600V
  • Height
    4.9276mm
  • Length
    10.8966mm
  • Width
    7.11mm
  • Radiation Hardening
    No
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Contains Lead, Lead Free
Description
IR2104PBF Overview
The 8-DIP (0.300, 7.62mm) package offers greater flexibility.A packaging method of Tube is indicated.In the direction of Through Hole, gate drivers is mounted.WGate driversh a 10V~20V supply voltage, gate drivers is able to demonstrate Gate driverss superiorGate driversy.Gate drivers is designed wGate driversh a IGBT, N-Channel MOSFET gate.There is a temperature range for this device of -40°C~150°C TJ.Mosfet driver uses Non-Inverting as Mosfet drivers input type.The configuration is based on 8 terminations.There are various related parts under its base part number IR2104PBF.Mosfet driver is mounted using Through Hole.Mosfet driver is configured wMosfet driverh 8 pins when designing.In addition, it is specifically designed to operate with a supply voltage of 15V.360mA is the maximum output current.This subcategory of MOSFET Drivers has a number of useful electronic components.Max (Bootstrap) can be as high as 600V.Based on its basis, it integrates 2 outputs.This device is capable of delivering 210mA current.This device has a maximum power dissipation of 1W, indicating that it is capable of reducing power loss without overheating.For higher stability, the supply current should be kept at 270μA.The power supply 15V of the product solves the power supply problem for a variety of applications.Mosfet gate drivers produces a voltage of 620V.A maximum output voltage of 20V should be maintained.

IR2104PBF Features
Embedded in the Tube package
Employing a gate type of IGBT, N-Channel MOSFET
8 pins
High-side voltage - Max (Bootstrap) of 600V
Maximum power dissipation of 1W

IR2104PBF Applications
There are a lot of Infineon Technologies IR2104PBF gate drivers applications.

serial peripheral interface (SPI), I2C
AC-DC Inverters
Solar inverters
High-voltage isolated DC-DC converters
Motor Controls
High power buffers
Portable Media Players
High frequency line drivers
Driving GaN Power Transistors used in Full or Half?Bridge, LLC,
Active filtering
IR2104PBF More Descriptions
Tube IR2104 Half-Bridge 1996 gate driver 100ns 50ns -40C~150C TJ 210mA 360mA 0.8V 3V
IR2104 Series 20 V 210 mA Through Hole Half Bridge Driver - PDIP-8
600 V half-bridge gate driver IC with shutdown, PDIP8, RoHSInfineon SCT
Half-Bridge Non-Inv. Driver, Vmax 600V, Io /Io- 130/270mA, tON/OFF 680/150ns;
MOSFET Driver IC; Device Type:Half-Bridge; Supply Voltage Min:10V; Supply Voltage Max:25V; Package/Case:8-DIP; No. of Pins:8; Operating Temperature Range:-55°C to 150°C; Fall Time, tf:50ns ;RoHS Compliant: Yes
600 V Half Bridge Driver IC with typical 0.21 A source and 0.36 A sink currents in 8 Lead PDIP package for IGBTs and MOSFETs. Also available in 8 Lead SOIC. | Summary of Features: Floating channel designed for bootstrap operation; Fully operational to 600 V; Tolerant to negative transient voltage; dV/dt immune; Gate drive supply range from 10 to 20 V; Undervoltage lockout; 3.3 V, 5 V, and 15 V logic input compatible; Cross-conduction prevention logic; Matched propagation delay for both channels; Internal set deadtime; High side output in phase with HIN input; Shut down input turns off both channels; Matched propagation delay for both channels
IC, DRIVER, MOSFET, 2104, DIP8; Driver Configuration: Half Bridge; Peak Output Current: 360mA; Supply Voltage Min: 10V; Supply Voltage Max: 20V; Driver Case Style: DIP; No. of Pins: 8Pins; Input Delay: 680ns; Output Delay: 150ns; Operating Temperature Min: -40°C; Operating Temperature Max: 125°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Base Number: 2104; Device Type: MOSFET; IC Generic Number: 2104; Module Configuration: Half Bridge; No. of Outputs: 2Outputs; Offset Voltage: 600V; Operating Temperature Range: -40°C to 125°C; Output Current: 210mA; Output Current Max: 100mA; Output Sink Current Min: 210mA; Output Source Current Min: 100mA; Output Voltage: 620V; Output Voltage Max: 20V; Output Voltage Min: 10V; Power Dissipation Pd: 1W; Supply Voltage Range: 10V to 20V; Termination Type: Through Hole; Turn Off Time: 90ns; Turn On Time: 600ns
Product Comparison
The three parts on the right have similar specifications to IR2104PBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Subcategory
    Max Power Dissipation
    Technology
    Voltage - Supply
    Terminal Position
    Number of Functions
    Supply Voltage
    Base Part Number
    Number of Outputs
    Output Voltage
    Max Output Current
    Power Supplies
    Nominal Supply Current
    Power Dissipation
    Output Current
    Max Supply Current
    Propagation Delay
    Input Type
    Turn On Delay Time
    Max Output Voltage
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Min Output Voltage
    Rise / Fall Time (Typ)
    Channel Type
    Output Peak Current Limit-Nom
    Driven Configuration
    Gate Type
    Current - Peak Output (Source, Sink)
    High Side Driver
    Logic Voltage - VIL, VIH
    High Side Voltage - Max (Bootstrap)
    Height
    Length
    Width
    Radiation Hardening
    REACH SVHC
    RoHS Status
    Lead Free
    Number of Drivers
    Supplier Device Package
    View Compare
  • IR2104PBF
    IR2104PBF
    12 Weeks
    Through Hole
    Through Hole
    8-DIP (0.300, 7.62mm)
    8
    -40°C~150°C TJ
    Tube
    1996
    Active
    1 (Unlimited)
    8
    Through Hole
    EAR99
    MOSFET Drivers
    1W
    CMOS
    10V~20V
    DUAL
    1
    15V
    IR2104PBF
    2
    620V
    360mA
    15V
    270μA
    1W
    210mA
    270μA
    820 ns
    Non-Inverting
    60 ns
    20V
    170ns
    90 ns
    90 ns
    10V
    100ns 50ns
    Synchronous
    0.36A
    Half-Bridge
    IGBT, N-Channel MOSFET
    210mA 360mA
    YES
    0.8V 3V
    600V
    4.9276mm
    10.8966mm
    7.11mm
    No
    No SVHC
    ROHS3 Compliant
    Contains Lead, Lead Free
    -
    -
    -
  • IR2107
    -
    -
    Through Hole
    8-DIP (0.300, 7.62mm)
    -
    -40°C~150°C TJ
    Tube
    2000
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    10V~20V
    -
    -
    -
    IR2107
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Inverting
    -
    -
    -
    -
    -
    -
    150ns 50ns
    Independent
    -
    Half-Bridge
    IGBT, N-Channel MOSFET
    200mA 350mA
    -
    0.8V 2.7V
    600V
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    2
    -
  • IR21074S
    -
    -
    Surface Mount
    14-SOIC (0.154, 3.90mm Width)
    -
    -40°C~150°C TJ
    Tube
    2000
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    10V~20V
    -
    -
    -
    IR21074S
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Inverting
    -
    -
    -
    -
    -
    -
    150ns 50ns
    Independent
    -
    Half-Bridge
    IGBT, N-Channel MOSFET
    200mA 350mA
    -
    0.8V 2.7V
    600V
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    2
    14-SOIC
  • IR2101PBF
    12 Weeks
    Through Hole
    Through Hole
    8-DIP (0.300, 7.62mm)
    8
    -40°C~150°C TJ
    Tube
    1996
    Active
    1 (Unlimited)
    8
    Through Hole
    EAR99
    MOSFET Drivers
    1W
    CMOS
    10V~20V
    DUAL
    1
    15V
    IR2101PBF
    2
    620V
    360mA
    15V
    270μA
    1W
    210mA
    270μA
    220 ns
    Non-Inverting
    50 ns
    20V
    170ns
    90 ns
    150 ns
    10V
    100ns 50ns
    Independent
    0.36A
    Half-Bridge
    IGBT, N-Channel MOSFET
    210mA 360mA
    YES
    0.8V 3V
    600V
    4.9276mm
    10.8966mm
    7.11mm
    No
    No SVHC
    ROHS3 Compliant
    Lead Free
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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