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Infineon Technologies IR2011PBF
- Part Number:
- IR2011PBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3254469-IR2011PBF
- Description:
- IC DRIVER HIGH/LOW SIDE 8-DIP
- ECAD Model:
-
- Datasheet:
- IR2011PBF
Infineon Technologies IR2011PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IR2011PBF.
- Factory Lead Time12 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / Case8-DIP (0.300, 7.62mm)
- Number of Pins8
- Operating Temperature-40°C~150°C TJ
- PackagingTube
- Published1996
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- TerminationThrough Hole
- ECCN CodeEAR99
- SubcategoryMOSFET Drivers
- Max Power Dissipation1W
- TechnologyCMOS
- Voltage - Supply10V~20V
- Terminal PositionDUAL
- Number of Functions1
- Supply Voltage15V
- Base Part NumberIR2011PBF
- Number of Outputs2
- Output Voltage220V
- Max Output Current1A
- Power Supplies15V
- Nominal Supply Current230μA
- Power Dissipation1W
- Output Current1A
- Max Supply Current230μA
- Propagation Delay80 ns
- Input TypeInverting
- Turn On Delay Time20 ns
- Max Output Voltage20V
- Rise Time50ns
- Fall Time (Typ)35 ns
- Turn-Off Delay Time75 ns
- Min Output Voltage10V
- Rise / Fall Time (Typ)35ns 20ns
- Interface IC TypeHALF BRIDGE BASED MOSFET DRIVER
- Channel TypeIndependent
- Output Peak Current Limit-Nom1A
- Driven ConfigurationHigh-Side or Low-Side
- Gate TypeN-Channel MOSFET
- Current - Peak Output (Source, Sink)1A 1A
- High Side DriverYES
- Logic Voltage - VIL, VIH0.7V 2.2V
- High Side Voltage - Max (Bootstrap)200V
- Height4.9276mm
- Length10.8966mm
- Width7.11mm
- Radiation HardeningNo
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IR2011PBF Overview
The device, published in 1996, has a single function and is capable of delivering a maximum output current of 1A. Its nominal supply current is 230μA, ensuring efficient power consumption. The minimum output voltage it can provide is 10V. The rise and fall time, which represents the speed at which the device can switch between high and low states, is approximately 35ns for rising signals and 20ns for falling signals. The channel type of this device is independent, meaning it can operate on its own without requiring any external synchronization. It can source and sink a peak output current of 1A each. With a height of 4.9276mm, this device is compact and can be easily integrated into various applications. However, it does not possess radiation hardening capabilities, which may be a consideration in certain environments.
IR2011PBF Features
Embedded in the Tube package
Employing a gate type of N-Channel MOSFET
8 pins
High-side voltage - Max (Bootstrap) of 200V
Maximum power dissipation of 1W
IR2011PBF Applications
There are a lot of Infineon Technologies IR2011PBF gate drivers applications.
Head-up and Head mounted displays
General Purpose 3-Phase Inverter
Isolated Supplies for Motor Control
Line drivers
UPS systems
Commercial and agricultural vehicles (CAV)
Industrial Power Supplies
High-speed communications
serial peripheral interface (SPI), I2C
Solar power supplies
The device, published in 1996, has a single function and is capable of delivering a maximum output current of 1A. Its nominal supply current is 230μA, ensuring efficient power consumption. The minimum output voltage it can provide is 10V. The rise and fall time, which represents the speed at which the device can switch between high and low states, is approximately 35ns for rising signals and 20ns for falling signals. The channel type of this device is independent, meaning it can operate on its own without requiring any external synchronization. It can source and sink a peak output current of 1A each. With a height of 4.9276mm, this device is compact and can be easily integrated into various applications. However, it does not possess radiation hardening capabilities, which may be a consideration in certain environments.
IR2011PBF Features
Embedded in the Tube package
Employing a gate type of N-Channel MOSFET
8 pins
High-side voltage - Max (Bootstrap) of 200V
Maximum power dissipation of 1W
IR2011PBF Applications
There are a lot of Infineon Technologies IR2011PBF gate drivers applications.
Head-up and Head mounted displays
General Purpose 3-Phase Inverter
Isolated Supplies for Motor Control
Line drivers
UPS systems
Commercial and agricultural vehicles (CAV)
Industrial Power Supplies
High-speed communications
serial peripheral interface (SPI), I2C
Solar power supplies
IR2011PBF More Descriptions
Tube IR2011 High-Side or Low-Side 1996 gate driver 35ns 20ns -40C~150C TJ 1A 1A 0.7V 2.2V
200 V high-side and low-side gate driver IC, PDIP8, RoHSInfineon SCT
IR2011 Series 200 V 1 A 20 V Supply Dual Output High And Low Driver - PDIP-8
Driver 200V 1A 2-OUT High and Low Side Non-Inv 8-Pin PDIP Tube
DRIVER, HALF BRIDGE, 200V, 8DIP; Driver Configuration: High Side and Low Side; Peak Output Current: 1A; Supply Voltage Min: 10V; Supply Voltage Max: 20V; Driver Case Style: DIP; No. of Pins: 8Pins; Input Delay: 80ns; Output Delay: 75ns; Operating Temperature Min: -40°C; Operating Temperature Max: 125°C; Product Range: -; Automotive Qualification Standard: -; RoHS Phthalates Compliant: Yes; MSL: -; SVHC: No SVHC (27-Jun-2018); Base Number: 2011; Device Type: MOSFET; IC Generic Number: 2011; Logic Function Number: 2011; Logic IC Function: Hi & Lo MOS Driver; Module Configuration: High Side, Low Side; No. of Outputs: 2Outputs; Offset Voltage: 200V; Operating Temperature Range: -40°C to 125°C; Output Sink Current Min: 1000mA; Output Source Current Min: 1000mA; Output Voltage: 220V; Output Voltage Max: 20V; Output Voltage Min: 10V; Supply Voltage Range: 10V to 20V; Termination Type: Through Hole; Turn Off Time: 60ns; Turn On Time: 80ns
200 V High and Low Side Driver IC with typical 1 A source and 1 A sink currents in 8 Lead PDIP package for IGBTs and MOSFETs. Also available in 8 Lead SOIC. | Summary of Features: Floating Channel designed for bootstrap operation, dV/dt immune; Fully operational to 200 V Tolerant to negative transient voltage; Tolerant to negative tansient voltage; dV/dt immune; Gate drive supply range from 10 V to 20 V; Independent low and high side channels; Input logic HIN/LIN active high; Undervoltage lockout for both channels; 3.3 V and 5 V input logic compatible; CMOS Schmitt-triggered inputs with pull-down; Matched propagation delay for both channels
200 V high-side and low-side gate driver IC, PDIP8, RoHSInfineon SCT
IR2011 Series 200 V 1 A 20 V Supply Dual Output High And Low Driver - PDIP-8
Driver 200V 1A 2-OUT High and Low Side Non-Inv 8-Pin PDIP Tube
DRIVER, HALF BRIDGE, 200V, 8DIP; Driver Configuration: High Side and Low Side; Peak Output Current: 1A; Supply Voltage Min: 10V; Supply Voltage Max: 20V; Driver Case Style: DIP; No. of Pins: 8Pins; Input Delay: 80ns; Output Delay: 75ns; Operating Temperature Min: -40°C; Operating Temperature Max: 125°C; Product Range: -; Automotive Qualification Standard: -; RoHS Phthalates Compliant: Yes; MSL: -; SVHC: No SVHC (27-Jun-2018); Base Number: 2011; Device Type: MOSFET; IC Generic Number: 2011; Logic Function Number: 2011; Logic IC Function: Hi & Lo MOS Driver; Module Configuration: High Side, Low Side; No. of Outputs: 2Outputs; Offset Voltage: 200V; Operating Temperature Range: -40°C to 125°C; Output Sink Current Min: 1000mA; Output Source Current Min: 1000mA; Output Voltage: 220V; Output Voltage Max: 20V; Output Voltage Min: 10V; Supply Voltage Range: 10V to 20V; Termination Type: Through Hole; Turn Off Time: 60ns; Turn On Time: 80ns
200 V High and Low Side Driver IC with typical 1 A source and 1 A sink currents in 8 Lead PDIP package for IGBTs and MOSFETs. Also available in 8 Lead SOIC. | Summary of Features: Floating Channel designed for bootstrap operation, dV/dt immune; Fully operational to 200 V Tolerant to negative transient voltage; Tolerant to negative tansient voltage; dV/dt immune; Gate drive supply range from 10 V to 20 V; Independent low and high side channels; Input logic HIN/LIN active high; Undervoltage lockout for both channels; 3.3 V and 5 V input logic compatible; CMOS Schmitt-triggered inputs with pull-down; Matched propagation delay for both channels
The three parts on the right have similar specifications to IR2011PBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeSubcategoryMax Power DissipationTechnologyVoltage - SupplyTerminal PositionNumber of FunctionsSupply VoltageBase Part NumberNumber of OutputsOutput VoltageMax Output CurrentPower SuppliesNominal Supply CurrentPower DissipationOutput CurrentMax Supply CurrentPropagation DelayInput TypeTurn On Delay TimeMax Output VoltageRise TimeFall Time (Typ)Turn-Off Delay TimeMin Output VoltageRise / Fall Time (Typ)Interface IC TypeChannel TypeOutput Peak Current Limit-NomDriven ConfigurationGate TypeCurrent - Peak Output (Source, Sink)High Side DriverLogic Voltage - VIL, VIHHigh Side Voltage - Max (Bootstrap)HeightLengthWidthRadiation HardeningREACH SVHCRoHS StatusLead FreeSeriesJESD-609 CodeTerminal FinishTerminal FormFrequencyNumber of DriversMax Junction Temperature (Tj)Built-in ProtectionsSurface MountPeak Reflow Temperature (Cel)Reflow Temperature-Max (s)JESD-30 CodeQualification StatusOutput Current Flow DirectionHeight Seated (Max)View Compare
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IR2011PBF12 WeeksThrough HoleThrough Hole8-DIP (0.300, 7.62mm)8-40°C~150°C TJTube1996Active1 (Unlimited)8Through HoleEAR99MOSFET Drivers1WCMOS10V~20VDUAL115VIR2011PBF2220V1A15V230μA1W1A230μA80 nsInverting20 ns20V50ns35 ns75 ns10V35ns 20nsHALF BRIDGE BASED MOSFET DRIVERIndependent1AHigh-Side or Low-SideN-Channel MOSFET1A 1AYES0.7V 2.2V200V4.9276mm10.8966mm7.11mmNoNo SVHCROHS3 CompliantLead Free---------------- -
12 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8-40°C~150°C TJTape & Reel (TR)2006Active2 (1 Year)8-EAR99-1W-10V~15VDUAL112VIR2085SPBF--1mA-5mA1W1A5mA-RC Input Circuit--40ns20 ns--40ns 20ns-Independent1AHalf-BridgeN-Channel MOSFET1A 1A--100V1.75mm4.9mm3.9mmNo-ROHS3 CompliantContains Lead, Lead FreeAutomotive, AEC-Q100e3Matte Tin (Sn)GULL WING500kHz2125°CTRANSIENT; OVER CURRENT; UNDER VOLTAGE-------
-
--Surface Mount8-SOIC (0.154, 3.90mm Width)--40°C~150°C TJTube2006Obsolete1 (Unlimited)8-EAR99---10V~15VDUAL112VIR2085S---------RC Input Circuit------40ns 20ns-Independent1AHalf-BridgeN-Channel MOSFET1A 1A--100V-4.9mm3.9mm--Non-RoHS Compliant-Automotive, AEC-Q100--GULL WING-2-TRANSIENT; OVER CURRENT; UNDER VOLTAGEYESNOT SPECIFIEDNOT SPECIFIEDR-PDSO-G8Not QualifiedSOURCE SINK1.75mm
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--Through Hole8-DIP (0.300, 7.62mm)--40°C~150°C TJTube1996Obsolete1 (Unlimited)8-EAR99--CMOS10V~20VDUAL115VIR2011---------Inverting------35ns 20nsHALF BRIDGE BASED MOSFET DRIVERIndependent1AHigh-Side or Low-SideN-Channel MOSFET1A 1AYES0.7V 2.2V200V-9.88mm---Non-RoHS Compliant------2--NONOT SPECIFIEDNOT SPECIFIEDR-PDIP-T8Not Qualified-5.33mm
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