Infineon Technologies IPB80N06S4L05ATMA2

Name: IPB80N06S4L05ATMA2
Brand: Infineon Technologies
SKU: 2487598-IPB80N06S4L05ATMA2
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IPB80N06S4L05ATMA2

Manufacturer:: Infineon Technologies

Ventron No:: 2487598-IPB80N06S4L05ATMA2

Description:: MOSFET N-CH 60V 80A TO263-3

ECAD Model:

Datasheet:: IPB80N06S4L05ATMA2

Specifications

Infineon Technologies IPB80N06S4L05ATMA2 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPB80N06S4L05ATMA2.

Factory Lead Time
16 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Number of Pins
3
Weight
1.946308g
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101, OptiMOS™
Published
2009
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
107W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
107W
Case Connection
DRAIN
Turn On Delay Time
14 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
5.1m Ω @ 80A, 10V
Vgs(th) (Max) @ Id
2.2V @ 60μA
Halogen Free
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
8180pF @ 25V
Current - Continuous Drain (Id) @ 25°C
80A Tc
Gate Charge (Qg) (Max) @ Vgs
110nC @ 10V
Rise Time
4ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±16V
Fall Time (Typ)
13 ns
Turn-Off Delay Time
80 ns
Continuous Drain Current (ID)
80A
Gate to Source Voltage (Vgs)
16V
Max Dual Supply Voltage
60V
Drain-source On Resistance-Max
0.0048Ohm
Drain to Source Breakdown Voltage
60V
Height
4.4mm
Length
10mm
Width
9.25mm
RoHS Status
ROHS3 Compliant

Description

IPB80N06S4L05ATMA2 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 8180pF @ 25V.This device has a continuous drain current (ID) of [80A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=60V, the drain-source breakdown voltage is 60V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 80 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 14 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 16V volts.Single MOSFETs transistor supports the maximum dual supply voltage when powered by 60V.Its overall power consumption can be reduced by using drive voltage (4.5V 10V).

IPB80N06S4L05ATMA2 Features
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 80 ns

IPB80N06S4L05ATMA2 Applications
There are a lot of Infineon Technologies
IPB80N06S4L05ATMA2 applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

IPB80N06S4L05ATMA2 More Descriptions

60V, N-Ch, 4.8 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T2, PG-TO263-3, RoHSInfineon SCT
Trans MOSFET N-CH 60V 80A Automotive 3-Pin(2 Tab) TO-263 T/R
Power Field-Effect Transistor, 80A I(D), 60V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: world's lowest RDS at 60V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors

Product Comparison

The three parts on the right have similar specifications to IPB80N06S4L05ATMA2.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Technology

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Halogen Free

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Max Dual Supply Voltage

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Height

Length

Width

RoHS Status

JESD-609 Code

Terminal Finish

Terminal Position

Reference Standard

Configuration

Drain to Source Voltage (Vdss)

Avalanche Energy Rating (Eas)

Lead Free

View Compare
IPB80N06S4L05ATMA2

Infineon Technologies

16 Weeks

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

1.946308g

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

Automotive, AEC-Q101, OptiMOS™

2009

yes

Active

1 (Unlimited)

2

EAR99

MOSFET (Metal Oxide)

GULL WING

NOT SPECIFIED

not_compliant

NOT SPECIFIED

R-PSSO-G2

1

1

107W Tc

Single

ENHANCEMENT MODE

107W

DRAIN

14 ns

N-Channel

5.1m Ω @ 80A, 10V

2.2V @ 60μA

Halogen Free

8180pF @ 25V

80A Tc

110nC @ 10V

4ns

4.5V 10V

±16V

13 ns

80 ns

80A

16V

60V

0.0048Ohm

60V

4.4mm

10mm

9.25mm

ROHS3 Compliant

-

-

-

-

-

-

-

-

-
IPB80N04S4-03

INFINEON

-

-

-

PG-TO263-3

-

-

-

-

Tape & Reel (TR)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

RoHS Compliant

-

-

-

-

-

-

-

-

IPB80N06S4L05ATMA2 vs IPB80N04S4-03
IPB80P03P405ATMA1

Infineon Technologies

14 Weeks

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

-

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

OptiMOS™

2008

-

Not For New Designs

1 (Unlimited)

2

EAR99

MOSFET (Metal Oxide)

GULL WING

NOT SPECIFIED

not_compliant

NOT SPECIFIED

R-PSSO-G2

1

-

137W Tc

-

ENHANCEMENT MODE

-

DRAIN

35 ns

P-Channel

4.7m Ω @ 80A, 10V

4V @ 253μA

Halogen Free

10300pF @ 25V

80A Tc

130nC @ 10V

10ns

10V

±20V

20 ns

70 ns

80A

20V

-30V

0.0047Ohm

-

-

-

-

ROHS3 Compliant

e3

Tin (Sn)

SINGLE

AEC-Q101

SINGLE WITH BUILT-IN DIODE

30V

410 mJ

Contains Lead

IPB80N06S4L05ATMA2 vs IPB80P03P405ATMA1
IPB80P04P4L08ATMA1

Infineon Technologies

14 Weeks

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

-

-

-55°C~175°C TJ

Tape & Reel (TR)

Automotive, AEC-Q101, OptiMOS™

2011

-

Not For New Designs

1 (Unlimited)

-

EAR99

MOSFET (Metal Oxide)

-

NOT SPECIFIED

not_compliant

NOT SPECIFIED

-

-

-

75W Tc

Single

-

75W

-

12 ns

P-Channel

7.9m Ω @ 80A, 10V

2.2V @ 120μA

Halogen Free

5430pF @ 25V

80A Tc

92nC @ 10V

11ns

4.5V 10V

±16V

35 ns

42 ns

-80A

16V

-40V

-

-40V

4.4mm

10mm

9.25mm

ROHS3 Compliant

e3

Tin (Sn)

-

-

-

40V

-

Contains Lead

IPB80N06S4L05ATMA2 vs IPB80P04P4L08ATMA1

Certification

Related parts for IPB80N06S4L05ATMA2

IPB80N04S4-04

INFINEON

in stock
IPB80N04S4-03

INFINEON

in stock
IPB80P03P405ATMA1

Infineon Technologies

MOSFET P-CH 30V 80A TO263-3
IPB80N06S4L05ATMA2

Infineon Technologies

MOSFET N-CH 60V 80A TO263-3
IPB80P04P4L08ATMA1

Infineon Technologies

MOSFET P-CH TO263-3

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IPB80N0~~(70)~~
IPB80N~~(70)~~
IPB80~~(64)~~
IPB8~~(64)~~
IPB~~(73)~~

Part Number	Manufacturers	Description	Stock	Price
IPB80N06S4L05ATMA2 DISTI #IPB80N06S4L05ATMA2-ND	Infineon Technologies AG	MOSFET N-CH 60V 80A TO263-3 RoHS: Compliant	0	1000 $0.77501
IPB80N06S4L05ATMA2 DISTI #IPB80N06S4L05ATMA2	Infineon Technologies AG	Trans MOSFET N-CH 60V 80A 3-Pin TO-263 T/R - Tape RoHS: Compliant	0	1000 $0.6759 2000 $0.6519 4000 $0.6279 6000 $0.6069 10000 $0.5959
IPB80N06S4L05ATMA2 DISTI #726-IPB80N06S4L05ATM	Infineon Technologies AG	MOSFET N-Ch 60V 80A D2PAK-2 RoHS: Compliant	0	1 $1.54 10 $1.31 100 $1.01 500 $0.893 1000 $0.705 2000 $0.625 10000 $0.602
IPB80N06S4L-05 DISTI #726-IPB80N06S4L-05	Infineon Technologies AG	MOSFET N-Ch 60V 80A D2PAK-2 OptiMOS-T2 RoHS: Compliant	211	1 $1.43 10 $1.22 100 $0.933 500 $0.824 1000 $0.651 2000 $0.577 10000 $0.556

Infineon Technologies IPB80N06S4L05ATMA2

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