Toshiba Semiconductor and Storage HN3C10FUTE85LF

Name: HN3C10FUTE85LF
Brand: Toshiba Semiconductor and Storage
SKU: 3584959-HN3C10FUTE85LF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: HN3C10FUTE85LF

Manufacturer:: Toshiba Semiconductor and Storage

Ventron No:: 3584959-HN3C10FUTE85LF

Description:: TRANSISTOR NPN US6

ECAD Model:

Datasheet:: HN3C10FUTE85LF

Specifications

Toshiba Semiconductor and Storage HN3C10FUTE85LF technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage HN3C10FUTE85LF.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Packaging
Cut Tape (CT)
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
200mW
Power - Max
200mW
Transistor Type
2 NPN (Dual)
Max Collector Current
80mA
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 20mA 10V
Collector Emitter Breakdown Voltage
12V
Gain
11.5dB
Max Breakdown Voltage
12V
Frequency - Transition
7GHz
Noise Figure (dB Typ @ f)
1.1dB @ 1GHz
RoHS Status
RoHS Compliant

Description

HN3C10FUTE85LF Overview
This product is manufactured by Toshiba Semiconductor and Storage and belongs to the category of Transistors - Bipolar (BJT) - RF. The images we provide are for reference only, for detailed product information please see specification sheet HN3C10FUTE85LF or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of HN3C10FUTE85LF. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

HN3C10FUTE85LF More Descriptions

Bipolar Transistors - BJT Transistor Lo Freq Small-Signal Amp
Cap Ceramic 0.0039uF 250V X7R 10% SMD 1206 125C Paper T/R
RF TRANS 2 NPN 12V 7GHZ US6

Certification

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HN3C10FUTE85LF

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TRANSISTOR NPN US6

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HN3C10F~~(6)~~
HN3C10~~(6)~~
HN3C1~~(8)~~
HN3C~~(11)~~
HN3~~(47)~~

Part Number	Manufacturers	Description	Stock	Price
HN3C10FUTE85LF DISTI #HN3C10FUTE85LFCT-ND	Toshiba America Electronic Components	RF TRANS 2 NPN 12V 7GHZ US6 RoHS: Compliant	161	1 $0.64 10 $0.536 25 $0.4692 100 $0.4023
HN3C10FUTE85LF DISTI #HN3C10FUTE85LFDKR-ND	Toshiba America Electronic Components	RF TRANS 2 NPN 12V 7GHZ US6 RoHS: Compliant	0
HN3C10FUTE85LF DISTI #HN3C10FUTE85LFTR-ND	Toshiba America Electronic Components	RF TRANS 2 NPN 12V 7GHZ US6 RoHS: Compliant	0
HN3C10FUTE85LF DISTI #757-HN3C10FUTE85LF	Toshiba America Electronic Components	Bipolar Transistors - BJT Transistor Lo Freq Small RoHS: Compliant	0

Toshiba Semiconductor and Storage HN3C10FUTE85LF

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