Intersil HIP2101IBZT7A
- Part Number:
- HIP2101IBZT7A
- Manufacturer:
- Intersil
- Ventron No:
- 3254006-HIP2101IBZT7A
- Description:
- IC HALF BRIDGE DRIVER 8SOIC
- Datasheet:
- HIP2101IBZT7A
Intersil HIP2101IBZT7A technical specifications, attributes, parameters and parts with similar specifications to Intersil HIP2101IBZT7A.
- Factory Lead Time11 Weeks
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Terminal FinishMatte Tin (Sn)
- Voltage - Supply9V~14V
- Base Part NumberHIP2101
- Pin Count8
- Input TypeNon-Inverting
- Rise / Fall Time (Typ)10ns 10ns
- Channel TypeIndependent
- Number of Drivers2
- Driven ConfigurationHalf-Bridge
- Gate TypeN-Channel MOSFET
- Current - Peak Output (Source, Sink)2A 2A
- Logic Voltage - VIL, VIH0.8V 2.2V
- High Side Voltage - Max (Bootstrap)114V
- RoHS StatusROHS3 Compliant
HIP2101IBZT7A Overview
This product features an 8-SOIC (0.154, 3.90mm Width) package/case, making it compact and suitable for various applications. It has a wide operating temperature range of -55°C to 150°C, ensuring reliable performance even in extreme environments. The product is packaged in Tape & Reel (TR) format, conforming to industry standards and facilitating efficient handling and storage. It also meets the e3 JESD-609 code for environmentally conscious manufacturing. With an active status, this product is readily available for purchase. It operates within a voltage supply range of 9V to 14V and has a non-inverting input type with independent channels. Furthermore, it has a high side voltage of 114V (bootstrap) and is compliant with ROHS3 regulations.
HIP2101IBZT7A Features
Embedded in the Tape & Reel (TR) package
2 drivers
Employing a gate type of N-Channel MOSFET
High-side voltage - Max (Bootstrap) of 114V
HIP2101IBZT7A Applications
There are a lot of Renesas Electronics America Inc. HIP2101IBZT7A gate drivers applications.
High-speed communications
Automotive Applications
High current laser/LED systems
Pulse transformer drivers
Video amplifiers
Isolated Supplies for controller area network (CAN),
DC/DC converters
48 V to 12 V PoL Converters, 48 V to Low Voltage Bus Converter,
Isolated switch mode power supplies (SMPS)
serial peripheral interface (SPI), I2C
This product features an 8-SOIC (0.154, 3.90mm Width) package/case, making it compact and suitable for various applications. It has a wide operating temperature range of -55°C to 150°C, ensuring reliable performance even in extreme environments. The product is packaged in Tape & Reel (TR) format, conforming to industry standards and facilitating efficient handling and storage. It also meets the e3 JESD-609 code for environmentally conscious manufacturing. With an active status, this product is readily available for purchase. It operates within a voltage supply range of 9V to 14V and has a non-inverting input type with independent channels. Furthermore, it has a high side voltage of 114V (bootstrap) and is compliant with ROHS3 regulations.
HIP2101IBZT7A Features
Embedded in the Tape & Reel (TR) package
2 drivers
Employing a gate type of N-Channel MOSFET
High-side voltage - Max (Bootstrap) of 114V
HIP2101IBZT7A Applications
There are a lot of Renesas Electronics America Inc. HIP2101IBZT7A gate drivers applications.
High-speed communications
Automotive Applications
High current laser/LED systems
Pulse transformer drivers
Video amplifiers
Isolated Supplies for controller area network (CAN),
DC/DC converters
48 V to 12 V PoL Converters, 48 V to Low Voltage Bus Converter,
Isolated switch mode power supplies (SMPS)
serial peripheral interface (SPI), I2C
HIP2101IBZT7A More Descriptions
100V/2A Peak High-Frequency Half Bridge Driver with TTL Logic Inputs
Half Bridge MOSFET 2A 9V~14V 2A SOP-8 Gate Drive ICs ROHS
IC GATE DRVR HALF-BRIDGE 8SOIC
Lead-Free Version, 100V Halfbridge Driver, 250Pc T&r/Tape & Reel Rohs Compliant: Yes |Renesas HIP2101IBZT7A
Half Bridge MOSFET 2A 9V~14V 2A SOP-8 Gate Drive ICs ROHS
IC GATE DRVR HALF-BRIDGE 8SOIC
Lead-Free Version, 100V Halfbridge Driver, 250Pc T&r/Tape & Reel Rohs Compliant: Yes |Renesas HIP2101IBZT7A
The three parts on the right have similar specifications to HIP2101IBZT7A.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseOperating TemperaturePackagingJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Terminal FinishVoltage - SupplyBase Part NumberPin CountInput TypeRise / Fall Time (Typ)Channel TypeNumber of DriversDriven ConfigurationGate TypeCurrent - Peak Output (Source, Sink)Logic Voltage - VIL, VIHHigh Side Voltage - Max (Bootstrap)RoHS StatusSupplier Device PackageMountNumber of PinsPublishedNumber of TerminationsMax Operating TemperatureMin Operating TemperatureAdditional FeatureSubcategoryTechnologyTerminal PositionTerminal FormNumber of FunctionsSupply VoltageTerminal PitchQualification StatusMax Output CurrentTemperature GradeMax Supply VoltageMin Supply VoltagePower Dissipation-MaxNominal Supply CurrentMax Supply CurrentCurrent - OutputRise TimeFall Time (Typ)Interface IC TypeHigh Side DriverTurn Off TimeHeight Seated (Max)LengthWidthSurface MountECCN CodePeak Reflow Temperature (Cel)Reflow Temperature-Max (s)Turn On TimeView Compare
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HIP2101IBZT7A11 WeeksSurface Mount8-SOIC (0.154, 3.90mm Width)-55°C~150°C TJTape & Reel (TR)e3Active1 (Unlimited)Matte Tin (Sn)9V~14VHIP21018Non-Inverting10ns 10nsIndependent2Half-BridgeN-Channel MOSFET2A 2A0.8V 2.2V114VROHS3 Compliant--------------------------------------
-
-Surface Mount10-WDFN Exposed Pad-55°C~150°C TJTube-Obsolete2 (1 Year)-8V~14V--Inverting10ns 10nsSynchronous2Half-BridgeN-Channel MOSFET2A 2A1.4V 2.2V114VROHS3 Compliant10-TDFN (4x4)------------------------------------
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-----e3Active2Matte Tin (Sn) - annealed------2-----RoHS Compliant-Surface Mount10201010125°C-40°CSEATED HGT-NOMMOSFET DriversCMOSDUALNO LEAD112V0.8mmNot Qualified2AAUTOMOTIVE14V8V3W4mA4mA2A600ns600 nsHALF BRIDGE BASED MOSFET DRIVERYES60 µs0.75mm4mm4mm-----
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10 WeeksSurface Mount12-VFDFN Exposed Pad-55°C~150°C TJTubee3Active3 (168 Hours)Matte Tin (Sn) - annealed9V~14VHIP210112Non-Inverting10ns 10nsIndependent2Half-BridgeN-Channel MOSFET2A 2A0.8V 2.2V114VROHS3 Compliant----12-----DUALNO LEAD112V0.5mm------------YES0.056 µs1mm4mm4mmYESEAR99NOT SPECIFIEDNOT SPECIFIED0.056 µs
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