Vishay Semiconductor Diodes Division GIB2401HE3/81
- Part Number:
- GIB2401HE3/81
- Manufacturer:
- Vishay Semiconductor Diodes Division
- Ventron No:
- 2415924-GIB2401HE3/81
- Description:
- DIODE ARRAY GP 50V 16A TO263AB
- Datasheet:
- GIB2401HE3/81
Vishay Semiconductor Diodes Division GIB2401HE3/81 technical specifications, attributes, parameters and parts with similar specifications to Vishay Semiconductor Diodes Division GIB2401HE3/81.
- Factory Lead Time29 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Number of Pins3
- Diode Element MaterialSILICON
- PackagingTape & Reel (TR)
- Published2011
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- Max Operating Temperature150°C
- Min Operating Temperature-65°C
- Additional FeatureFREE WHEELING DIODE, HIGH RELIABILITY
- HTS Code8541.10.00.80
- SubcategoryRectifier Diodes
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)245
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Number of Elements2
- Element ConfigurationCommon Cathode
- SpeedFast Recovery =< 500ns, > 200mA (Io)
- Diode TypeStandard
- Current - Reverse Leakage @ Vr50μA @ 50V
- Voltage - Forward (Vf) (Max) @ If975mV @ 8A
- Forward Current16A
- Operating Temperature - Junction-65°C~150°C
- Max Surge Current125A
- ApplicationEFFICIENCY
- Max Reverse Voltage (DC)50V
- Average Rectified Current16A
- Number of Phases1
- Reverse Recovery Time35 ns
- Peak Reverse Current50μA
- Max Repetitive Reverse Voltage (Vrrm)50V
- Peak Non-Repetitive Surge Current125A
- Reverse Voltage50V
- Diode Configuration1 Pair Common Cathode
- Recovery Time35 ns
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
GIB2401HE3/81 Overview
We should be monitoring the surge current and keeping it below 125A.A forward voltage of 16A will enable the device to operate.Array is powered by a reverse voltage peak of 50μA.
GIB2401HE3/81 Features
a peak voltage of 50μA
a reverse voltage peak of 50μA
GIB2401HE3/81 Applications
There are a lot of Vishay Semiconductor Diodes Division
GIB2401HE3/81 applications of rectifier diode array.
Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
We should be monitoring the surge current and keeping it below 125A.A forward voltage of 16A will enable the device to operate.Array is powered by a reverse voltage peak of 50μA.
GIB2401HE3/81 Features
a peak voltage of 50μA
a reverse voltage peak of 50μA
GIB2401HE3/81 Applications
There are a lot of Vishay Semiconductor Diodes Division
GIB2401HE3/81 applications of rectifier diode array.
Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
GIB2401HE3/81 More Descriptions
Diode Switching 50V 16A 3-Pin(2 Tab) TO-263AB T/R
DIODE ARRAY GP 50V 16A TO263AB
16A,50V,35Ns,dual Uf Rect
DIODE ARRAY GP 50V 16A TO263AB
16A,50V,35Ns,dual Uf Rect
The three parts on the right have similar specifications to GIB2401HE3/81.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsDiode Element MaterialPackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Operating TemperatureMin Operating TemperatureAdditional FeatureHTS CodeSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeNumber of ElementsElement ConfigurationSpeedDiode TypeCurrent - Reverse Leakage @ VrVoltage - Forward (Vf) (Max) @ IfForward CurrentOperating Temperature - JunctionMax Surge CurrentApplicationMax Reverse Voltage (DC)Average Rectified CurrentNumber of PhasesReverse Recovery TimePeak Reverse CurrentMax Repetitive Reverse Voltage (Vrrm)Peak Non-Repetitive Surge CurrentReverse VoltageDiode ConfigurationRecovery TimeRadiation HardeningRoHS StatusView Compare
-
GIB2401HE3/8129 WeeksSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3SILICONTape & Reel (TR)2011e3yesActive1 (Unlimited)2EAR99Matte Tin (Sn) - with Nickel (Ni) barrier150°C-65°CFREE WHEELING DIODE, HIGH RELIABILITY8541.10.00.80Rectifier DiodesSINGLEGULL WING245403R-PSSO-G22Common CathodeFast Recovery =< 500ns, > 200mA (Io)Standard50μA @ 50V975mV @ 8A16A-65°C~150°C125AEFFICIENCY50V16A135 ns50μA50V125A50V1 Pair Common Cathode35 nsNoROHS3 Compliant-
-
29 WeeksSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3SILICONTube2011e3yesActive1 (Unlimited)2EAR99Matte Tin (Sn) - with Nickel (Ni) barrier150°C-65°CFREE WHEELING DIODE, HIGH RELIABILITY8541.10.00.80Rectifier DiodesSINGLEGULL WING245403R-PSSO-G22Common CathodeFast Recovery =< 500ns, > 200mA (Io)Standard5μA @ 200V975mV @ 8A16A-65°C~150°C125AEFFICIENCY200V16A135 ns5μA200V125A200V1 Pair Common Cathode35 nsNoROHS3 Compliant
-
20 WeeksSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3SILICONTape & Reel (TR)2011e3yesActive1 (Unlimited)2EAR99Matte Tin (Sn)150°C-65°CFREE WHEELING DIODE8541.10.00.80Rectifier DiodesSINGLEGULL WING--3R-PSSO-G22Common CathodeFast Recovery =< 500ns, > 200mA (Io)Standard50μA @ 50V975mV @ 8A16A-65°C~150°C125AEFFICIENCY50V16A135 ns50μA50V125A50V1 Pair Common Cathode35 nsNoROHS3 Compliant
-
29 WeeksSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3-Tube2011-yesActive1 (Unlimited)---150°C-65°C-------3--Common CathodeFast Recovery =< 500ns, > 200mA (Io)Standard50μA @ 50V975mV @ 8A16A-65°C~150°C125A-50V16A-35 ns50μA50V125A50V1 Pair Common Cathode35 nsNoROHS3 Compliant
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
15 March 2024
ULN2003 Alternatives, Characteristics, Working Principle and Application
Ⅰ. ULN2003 overviewⅡ. What are the characteristics of ULN2003?Ⅲ. Pin diagram and functions of ULN2003Ⅳ. Working principle and function of ULN2003Ⅴ. ULN2003 drive circuit diagramⅥ. Where is ULN2003... -
15 March 2024
Detailed Explanation of 24C02 EEPROM Memory Chip
Ⅰ. Overview of 24C02Ⅱ. Functions of 24C02Ⅲ. Basic operations of 24C02Ⅳ. Application of 24C02Ⅴ. 24C02 pinoutⅥ. How to protect the data of 24C02?Ⅶ. How to use 24C02?EEPROM refers... -
18 March 2024
LM324N Internal Structure, Working Principle and LM324 vs LM324N
Ⅰ. Overview of LM324NⅡ. Internal structure and working principle of LM324NⅢ. Typical performance characteristics of LM324NⅣ. How to configure the power supply for LM324N?Ⅴ. Pin description of LM324NⅥ.... -
18 March 2024
TDA7377 Audio Power Amplifier Alternatives, Application and Other Details
Ⅰ. Overview of TDA7377Ⅱ. Performance evaluation of TDA7377Ⅲ. Internal circuit diagram of TDA7377Ⅳ. Application of TDA7377Ⅴ. PCB-layout grounding of TDA7377Ⅵ. TDA7377 power amplifier chip parametersⅦ. How to ensure...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.