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GBL06

GeneSiC Semiconductor GBL06

Part Number:
GBL06
Manufacturer:
GeneSiC Semiconductor
Ventron No:
2411121-GBL06
Description:
DIODE BRIDGE 600V 4A GBL
ECAD Model:
Datasheet:
GBL00 Thru GBL10

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Specifications
GeneSiC Semiconductor GBL06 technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor GBL06.
  • Lifecycle Status
    PRODUCTION (Last Updated: 6 months ago)
  • Factory Lead Time
    4 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    4-SIP, GBL
  • Number of Pins
    4
  • Supplier Device Package
    GBL
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Bulk
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Technology
    Standard
  • Diode Type
    Single Phase
  • Current - Reverse Leakage @ Vr
    5μA @ 600V
  • Voltage - Forward (Vf) (Max) @ If
    1.1V @ 4A
  • Forward Current
    4A
  • Max Reverse Leakage Current
    5μA
  • Max Surge Current
    150A
  • Current - Average Rectified (Io)
    4A
  • Peak Reverse Current
    5A
  • Max Repetitive Reverse Voltage (Vrrm)
    600V
  • Voltage - Peak Reverse (Max)
    600V
  • RoHS Status
    RoHS Compliant
Description
GBL06 Overview
The device operates at 4A forward voltage.Basically, it's an electronic component that comes in a 4-SIP, GBL package.Bridge rectifier is important to monBridge rectifieror the reverse leakage current and not allow Bridge rectifier to exceed 5μA.This device is mounted in the Through Hole position.Keeping it at -55°C~150°C TJ ensures its normal operation.A surge current should not exceed 150A and should be monitored.In order to power this device, there is a reverse voltage peak of 5A.

GBL06 Features
4A forward voltage
forward voltage of 4A
4-SIP, GBL package
operating at a temperature of -55°C~150°C TJ
peak reverse voltage of 5A
a reverse voltage peak of 5A


GBL06 Applications
There are a lot of GeneSiC Semiconductor
GBL06 applications of bridge rectifiers.


Military and other high-reliability applications
High forward surge current capability
Low thermal resistance
Extremely robust construction
Fuse-in-glass diodes design
Electrically isolated aluminum case
Motor controls – Low Voltage and Medium Voltage converters
SCR power bridges for solid state starters
SCR and diode based input rectifiers
Crowbar systems for motor drives
GBL06 More Descriptions
600V 4A GBL Single Phase Bridge Rectifier
Bridge Rectifiers 600V 4A Bridge Rectifier
Product Description Demo for Development.
BRIDGE RECT 1PHASE 600V 4A GBL
Bridge Rectifier, Single Phase, 4A, 600V, Gbl-4; No. Of Phases:Single Phase; Repetitive Peak Reverse Voltage:600V; Average Forward Current:4A; Bridge Rectifier Case Style:Sip; No. Of Pins:4Pins; Forward Voltage Max:1.1V Rohs Compliant: Yes |Genesic Semiconductor GBL06
Product Comparison
The three parts on the right have similar specifications to GBL06.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Operating Temperature
    Packaging
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Technology
    Diode Type
    Current - Reverse Leakage @ Vr
    Voltage - Forward (Vf) (Max) @ If
    Forward Current
    Max Reverse Leakage Current
    Max Surge Current
    Current - Average Rectified (Io)
    Peak Reverse Current
    Max Repetitive Reverse Voltage (Vrrm)
    Voltage - Peak Reverse (Max)
    RoHS Status
    Diode Element Material
    Published
    JESD-609 Code
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    HTS Code
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Configuration
    Case Connection
    Output Current-Max
    Number of Phases
    Non-rep Pk Forward Current-Max
    Breakdown Voltage-Min
    Pbfree Code
    Subcategory
    Pin Count
    Element Configuration
    Forward Voltage
    Average Rectified Current
    Peak Non-Repetitive Surge Current
    Height
    Length
    Width
    Radiation Hardening
    Lead Free
    View Compare
  • GBL06
    GBL06
    GeneSiC Semiconductor
    PRODUCTION (Last Updated: 6 months ago)
    4 Weeks
    Through Hole
    Through Hole
    4-SIP, GBL
    4
    GBL
    -55°C~150°C TJ
    Bulk
    Active
    1 (Unlimited)
    150°C
    -55°C
    Standard
    Single Phase
    5μA @ 600V
    1.1V @ 4A
    4A
    5μA
    150A
    4A
    5A
    600V
    600V
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • GBL06-M3/51
    GBL06-M3/51
    Vishay Semiconductor Diodes Division
    -
    8 Weeks
    Through Hole
    Through Hole
    4-SIP, GBL
    -
    -
    -55°C~150°C TJ
    Tray
    Active
    1 (Unlimited)
    -
    -
    Standard
    Single Phase
    5μA @ 600V
    1.1V @ 4A
    -
    -
    -
    4A
    -
    -
    600V
    ROHS3 Compliant
    SILICON
    2017
    e3
    4
    EAR99
    Matte Tin (Sn)
    UL RECOGNIZED
    8541.10.00.80
    NOT SPECIFIED
    unknown
    NOT SPECIFIED
    R-PSIP-T4
    4
    BRIDGE, 4 ELEMENTS
    ISOLATED
    3A
    1
    150A
    600V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    GBL06 vs GBL06-M3/51
  • GBL005-E3/45
    GBL005-E3/45
    Vishay Semiconductor Diodes Division
    -
    8 Weeks
    Through Hole
    Through Hole
    4-SIP, GBL
    4
    -
    -55°C~150°C TJ
    Tube
    Active
    1 (Unlimited)
    -
    -
    Standard
    Single Phase
    5μA @ 50V
    1.1V @ 4A
    4A
    5μA
    150A
    3A
    5μA
    50V
    -
    ROHS3 Compliant
    SILICON
    2011
    e3
    4
    EAR99
    Matte Tin (Sn)
    UL RECOGNIZED
    -
    -
    -
    -
    -
    1
    -
    ISOLATED
    3A
    1
    -
    -
    yes
    Bridge Rectifier Diodes
    4
    Single
    1V
    4A
    150A
    10.7mm
    20.9mm
    3.56mm
    No
    Lead Free
    GBL06 vs GBL005-E3/45
  • GBL08
    GBL08
    GeneSiC Semiconductor
    PRODUCTION (Last Updated: 6 months ago)
    4 Weeks
    -
    Through Hole
    4-SIP, GBL
    -
    GBL
    -55°C~150°C TJ
    Bulk
    Active
    1 (Unlimited)
    150°C
    -55°C
    Standard
    Single Phase
    10μA @ 800V
    1V @ 2A
    4A
    5μA
    150A
    4A
    5A
    800V
    800V
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    GBL06 vs GBL08
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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