Diodes Incorporated FZT795ATA
- Part Number:
- FZT795ATA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2845241-FZT795ATA
- Description:
- TRANS PNP 140V 0.5A SOT-223
- Datasheet:
- FZT795ATA
Diodes Incorporated FZT795ATA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated FZT795ATA.
- Factory Lead Time13 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Number of Pins4
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingCut Tape (CT)
- Published2000
- JESD-609 Codee3
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Voltage - Rated DC-140V
- Max Power Dissipation2W
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-500mA
- Frequency100MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberFZT795
- Number of Elements1
- Voltage150V
- Element ConfigurationSingle
- Current5A
- Power Dissipation2W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product100MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)140V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce300 @ 10mA 2V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage140V
- Transition Frequency100MHz
- Collector Emitter Saturation Voltage-300mV
- Max Breakdown Voltage140V
- Collector Base Voltage (VCBO)140V
- Emitter Base Voltage (VEBO)-5V
- Continuous Collector Current-500mA
- Height1.65mm
- Length6.7mm
- Width3.7mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FZT795ATA Overview
This device has a DC current gain of 300 @ 10mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -300mV.A VCE saturation (Max) of 250mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at -500mA to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 140V volts can be used.A maximum collector current of 500mA volts is possible.
FZT795ATA Features
the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 250mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
a transition frequency of 100MHz
FZT795ATA Applications
There are a lot of Diodes Incorporated
FZT795ATA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 300 @ 10mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -300mV.A VCE saturation (Max) of 250mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at -500mA to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 140V volts can be used.A maximum collector current of 500mA volts is possible.
FZT795ATA Features
the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 250mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
a transition frequency of 100MHz
FZT795ATA Applications
There are a lot of Diodes Incorporated
FZT795ATA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
FZT795ATA More Descriptions
FZT795A Series PNP 0.5 A 140 V SMT Silicon High Gain Transistor - SOT-223
Trans GP BJT PNP 140V 3A 3000mW 4-Pin(3 Tab) SOT-223 T/R
PNP Power High Gain Transistor SOT-223 | Diodes Inc FZT795ATA
Power Bipolar Transistor, 0.5A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin
Trans GP BJT PNP 140V 3A 3000mW 4-Pin(3 Tab) SOT-223 T/R
PNP Power High Gain Transistor SOT-223 | Diodes Inc FZT795ATA
Power Bipolar Transistor, 0.5A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin
The three parts on the right have similar specifications to FZT795ATA.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberNumber of ElementsVoltageElement ConfigurationCurrentPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeHTS CodeReach Compliance CodePin CountJESD-30 CodeQualification StatusPolarityPower - MaxFrequency - TransitionCurrent - Collector (Ic) (Max)Contact PlatingSubcategoryhFE MinView Compare
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FZT795ATA13 WeeksSurface MountSurface MountTO-261-4, TO-261AA47.994566mgSILICON-55°C~150°C TJCut Tape (CT)2000e3noActive1 (Unlimited)4EAR99Matte Tin (Sn)-140V2WDUALGULL WING260-500mA100MHz40FZT7951150VSingle5A2WCOLLECTORSWITCHING100MHzPNPPNP140V500mA300 @ 10mA 2V100nA250mV @ 50mA, 500mA140V100MHz-300mV140V140V-5V-500mA1.65mm6.7mm3.7mmNo SVHCNoROHS3 CompliantLead Free-------------
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-Surface MountSurface MountTO-261-4, TO-261AA--SILICON-55°C~150°C TJDigi-Reel®---Obsolete1 (Unlimited)4EAR99--100V2WDUALGULL WING--1.5A--FZT7041----COLLECTORSWITCHING--PNP - Darlington2.5V1.5A3000 @ 1A 5V10μA2.5V @ 2mA, 2A100V160MHz-60V120V10V------Non-RoHS CompliantContains Lead8541.29.00.75unknown4R-PDSO-G4Not QualifiedPNP2W160MHz----
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-Surface MountSurface MountTO-261-4, TO-261AA-7.994566mgSILICON-55°C~150°C TJTape & Reel (TR)-e3-Obsolete1 (Unlimited)4EAR99Matte Tin (Sn)-140V2WDUALGULL WING260-500mA-40FZT7951-Single--COLLECTORSWITCHING100MHzPNPPNP250mV500mA300 @ 10mA 2V100nA250mV @ 50mA, 500mA140V100MHz-300mV--140V-5V-500mA1.65mm6.7mm3.7mmNo SVHC-RoHS CompliantLead Free8541.29.00.75--R-PDSO-G4Not Qualified---500mA---
-
15 WeeksSurface MountSurface MountTO-261-4, TO-261AA-7.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2009e3noActive1 (Unlimited)4EAR99--6.25WDUALGULL WING260--40FZT70531-Single--COLLECTORSWITCHING--NPN - Darlington100V1.5A1000 @ 1A 5V200nA1.5V @ 100μA, 100mA100V200MHz1.5V100V100V12V1.5A1.65mm6.7mm3.7mmNo SVHCNoROHS3 CompliantLead Free--4R-PDSO-G4-NPN1.25W200MHz-TinOther Transistors10000
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