Fairchild/ON Semiconductor FQB30N06LTM
- Part Number:
- FQB30N06LTM
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2478708-FQB30N06LTM
- Description:
- MOSFET N-CH 60V 32A D2PAK
- Datasheet:
- FQB30N06LTM
Fairchild/ON Semiconductor FQB30N06LTM technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FQB30N06LTM.
- Lifecycle StatusACTIVE (Last Updated: 19 hours ago)
- Factory Lead Time9 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Number of Pins3
- Weight1.31247g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesQFET®
- Published2001
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Resistance35mOhm
- Terminal FinishTin (Sn)
- SubcategoryFET General Purpose Power
- Voltage - Rated DC60V
- TechnologyMOSFET (Metal Oxide)
- Terminal FormGULL WING
- Current Rating32A
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Power Dissipation-Max3.75W Ta 79W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation3.75W
- Case ConnectionDRAIN
- Turn On Delay Time15 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs35m Ω @ 16A, 10V
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1040pF @ 25V
- Current - Continuous Drain (Id) @ 25°C32A Tc
- Gate Charge (Qg) (Max) @ Vgs20nC @ 5V
- Rise Time210ns
- Drive Voltage (Max Rds On,Min Rds On)5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)110 ns
- Turn-Off Delay Time60 ns
- Continuous Drain Current (ID)32A
- Threshold Voltage2.5V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage60V
- Height4.83mm
- Length10.67mm
- Width9.65mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FQB30N06LTM Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1040pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 60V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 60V.As a result of its turn-off delay time, which is 60 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 15 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 2.5V.In addition to reducing power consumption, this device uses drive voltage (5V 10V).
FQB30N06LTM Features
a continuous drain current (ID) of 32A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 60 ns
a threshold voltage of 2.5V
FQB30N06LTM Applications
There are a lot of ON Semiconductor
FQB30N06LTM applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1040pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 60V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 60V.As a result of its turn-off delay time, which is 60 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 15 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 2.5V.In addition to reducing power consumption, this device uses drive voltage (5V 10V).
FQB30N06LTM Features
a continuous drain current (ID) of 32A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 60 ns
a threshold voltage of 2.5V
FQB30N06LTM Applications
There are a lot of ON Semiconductor
FQB30N06LTM applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
FQB30N06LTM More Descriptions
N-Channel Power MOSFET, Logic Level, QFET®, 60 V, 32 A, 35 mΩ, D2PAK
TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,32A I(D),TO-263AB
N-Channel 60 V 0.035 Ohm Surface Mount Mosfet - D2PAK-3
Trans MOSFET N-CH 60V 32A 3-Pin(2 Tab) D2PAK T/R
Power Field-Effect Transistor, 32A I(D), 60V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N CH, 60V, 32A, TO263AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 32A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.027ohm; Available until stocks are exhausted Alternative available
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,32A I(D),TO-263AB
N-Channel 60 V 0.035 Ohm Surface Mount Mosfet - D2PAK-3
Trans MOSFET N-CH 60V 32A 3-Pin(2 Tab) D2PAK T/R
Power Field-Effect Transistor, 32A I(D), 60V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N CH, 60V, 32A, TO263AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 32A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.027ohm; Available until stocks are exhausted Alternative available
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
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