Fairchild/ON Semiconductor FQB11N40TM

FQB11N40TM Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 520 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1.4pF @ 25V.A device's drain current is its maximum continuous current, and this device's drain current is 11.4A.A maximum pulsed drain current of 46A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 400V.In order to operate this transistor, a voltage of 400V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

FQB11N40TM Features
the avalanche energy rating (Eas) is 520 mJ
based on its rated peak drain current 46A.
a 400V drain to source voltage (Vdss)


FQB11N40TM Applications
There are a lot of Rochester Electronics, LLC
FQB11N40TM applications of single MOSFETs transistors.


Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit