Diodes Incorporated FMMT618TA
- Part Number:
- FMMT618TA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2462897-FMMT618TA
- Description:
- TRANS NPN 20V 2.5A SOT23-3
- Datasheet:
- FMMT618TA
Diodes Incorporated FMMT618TA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated FMMT618TA.
- Factory Lead Time15 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn) - annealed
- SubcategoryOther Transistors
- Voltage - Rated DC20V
- Max Power Dissipation625mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating2.5A
- Frequency140MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberFMMT618
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation625mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product140MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)20V
- Max Collector Current2.5A
- DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2A 2V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic200mV @ 50mA, 2.5A
- Collector Emitter Breakdown Voltage20V
- Transition Frequency140MHz
- Collector Emitter Saturation Voltage130mV
- Max Breakdown Voltage20V
- Collector Base Voltage (VCBO)20V
- Emitter Base Voltage (VEBO)5V
- Continuous Collector Current2.5A
- Height1.1mm
- Length3mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FMMT618TA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 2A 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 130mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 200mV @ 50mA, 2.5A.Continuous collector voltages of 2.5A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 2.5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 140MHz.Single BJT transistor can take a breakdown input voltage of 20V volts.During maximum operation, collector current can be as low as 2.5A volts.
FMMT618TA Features
the DC current gain for this device is 200 @ 2A 2V
a collector emitter saturation voltage of 130mV
the vce saturation(Max) is 200mV @ 50mA, 2.5A
the emitter base voltage is kept at 5V
the current rating of this device is 2.5A
a transition frequency of 140MHz
FMMT618TA Applications
There are a lot of Diodes Incorporated
FMMT618TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 2A 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 130mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 200mV @ 50mA, 2.5A.Continuous collector voltages of 2.5A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 2.5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 140MHz.Single BJT transistor can take a breakdown input voltage of 20V volts.During maximum operation, collector current can be as low as 2.5A volts.
FMMT618TA Features
the DC current gain for this device is 200 @ 2A 2V
a collector emitter saturation voltage of 130mV
the vce saturation(Max) is 200mV @ 50mA, 2.5A
the emitter base voltage is kept at 5V
the current rating of this device is 2.5A
a transition frequency of 140MHz
FMMT618TA Applications
There are a lot of Diodes Incorporated
FMMT618TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
FMMT618TA More Descriptions
Trans GP BJT NPN 20V 2.5A 625mW 3-Pin SOT-23 T/R / TRANS NPN 20V 2.5A SOT23-3
FMMT618 Series NPN 2.5 A 20 V Surface Mount Silicon Power Transistor - SOT-23
20V 625mW 200@2A,2V 2.5A NPN SOT-23-3 Bipolar Transistors - BJT ROHS
Small Signal Bipolar Transistor, 2.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon
Transistor NPN FMMT618/FMMT618TA ZETEX RoHS Ampere=2.5 V=20 SOt23Halfin
TRANSISTOR, NPN, 20V, 2.5A, SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 20V; Transition Frequency ft: 140MHz; Power Dissipation Pd: 625mW; DC Collector Current: 2.5A; DC Current Gain hFE: 100hFE; Tran
FMMT618 Series NPN 2.5 A 20 V Surface Mount Silicon Power Transistor - SOT-23
20V 625mW 200@2A,2V 2.5A NPN SOT-23-3 Bipolar Transistors - BJT ROHS
Small Signal Bipolar Transistor, 2.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon
Transistor NPN FMMT618/FMMT618TA ZETEX RoHS Ampere=2.5 V=20 SOt23Halfin
TRANSISTOR, NPN, 20V, 2.5A, SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 20V; Transition Frequency ft: 140MHz; Power Dissipation Pd: 625mW; DC Collector Current: 2.5A; DC Current Gain hFE: 100hFE; Tran
The three parts on the right have similar specifications to FMMT618TA.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeAdditional FeatureReference StandardJESD-30 CodeConfigurationPower - MaxFrequency - TransitionContact PlatingManufacturer Package IdentifierTerminationTurn On Delay TimeTurn-Off Delay TimehFE MinView Compare
-
FMMT618TA15 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn) - annealedOther Transistors20V625mWDUALGULL WING2602.5A140MHz40FMMT61831Single625mWSWITCHING140MHzNPNNPN20V2.5A200 @ 2A 2V100nA200mV @ 50mA, 2.5A20V140MHz130mV20V20V5V2.5A1.1mm3mm1.4mmNo SVHCNoROHS3 CompliantLead Free-------------
-
13 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-3--SILICON-55°C~150°C TJTape & Reel (TR)2013e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)Other Transistors-625mWDUALGULL WING260--40--1--SWITCHING-PNPPNP330mV1.5A180 @ 1A 2V100nA330mV @ 100mA, 1.5A40V180MHz-40V--------ROHS3 Compliant-HIGH RELIABILITYAEC-Q101R-PDSO-G3SINGLE625mW180MHz------
-
13 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-3--SILICON-55°C~150°C TJTape & Reel (TR)2013e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)Other Transistors-500mWDUALGULL WING260--10--1----NPNNPN600mV1A100 @ 250mA 10V100nA600mV @ 100mA, 1A100V150MHz-100V--------ROHS3 Compliant-HIGH RELIABILITYAEC-Q101R-PDSO-G3SINGLE500mW150MHz------
-
15 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3yesActive1 (Unlimited)3EAR99-Other Transistors50V625mWDUALGULL WING2602A165MHz40FMMT61931Single625mWSWITCHING165MHzNPNNPN50V2A200 @ 1A 2V100nA220mV @ 50mA, 2A50V165MHz150mV50V50V5V2A1.1mm3mm1.4mmNo SVHCNoROHS3 CompliantLead FreeHIGH RELIABILITY-----TinFMMT619TASMD/SMT170 ns750 ns300
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