Fairchild/ON Semiconductor FJN4314RBU
- Part Number:
- FJN4314RBU
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2471624-FJN4314RBU
- Description:
- TRANS PREBIAS PNP 300MW TO92-3
- Datasheet:
- FJN4314RBU
Fairchild/ON Semiconductor FJN4314RBU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FJN4314RBU.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Number of Pins3
- PackagingBulk
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC-50V
- Max Power Dissipation300mW
- Current Rating-100mA
- PolarityPNP
- Element ConfigurationSingle
- Power Dissipation300mW
- Transistor TypePNP - Pre-Biased
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce68 @ 5mA 5V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic300mV @ 500μA, 10mA
- Collector Emitter Breakdown Voltage50V
- Frequency - Transition200MHz
- Emitter Base Voltage (VEBO)-10V
- hFE Min68
- Resistor - Base (R1)4.7 k Ω
- Continuous Collector Current-100mA
- Resistor - Emitter Base (R2)47 k Ω
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
FJN4314RBU Overview
This product is manufactured by Fairchild/ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet FJN4314RBU or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of FJN4314RBU. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Fairchild/ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet FJN4314RBU or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of FJN4314RBU. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
FJN4314RBU More Descriptions
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 300mW Through Hole TO-92-3
Trans Digital BJT PNP 50V 100mA 3-Pin TO-92 Bulk
Transistors Switching - Resistor Biased 40V/100mA/4.7K 47K
TRANS PREBIAS PNP 300MW TO92-3
SMALL SIGNAL BIPOLAR TRANSISTOR
Trans Digital BJT PNP 50V 100mA 3-Pin TO-92 Bulk
Transistors Switching - Resistor Biased 40V/100mA/4.7K 47K
TRANS PREBIAS PNP 300MW TO92-3
SMALL SIGNAL BIPOLAR TRANSISTOR
The three parts on the right have similar specifications to FJN4314RBU.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsPackagingPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureVoltage - Rated DCMax Power DissipationCurrent RatingPolarityElement ConfigurationPower DissipationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageFrequency - TransitionEmitter Base Voltage (VEBO)hFE MinResistor - Base (R1)Continuous Collector CurrentResistor - Emitter Base (R2)RoHS StatusLead FreeSupplier Device PackagePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Surface MountTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsTerminal FinishAdditional FeatureTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationTransistor ApplicationPolarity/Channel TypeTransition FrequencyView Compare
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FJN4314RBUThrough HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA)3BulkObsolete1 (Unlimited)150°C-55°C-50V300mW-100mAPNPSingle300mWPNP - Pre-Biased50V100mA68 @ 5mA 5V100nA ICBO300mV @ 500μA, 10mA50V200MHz-10V684.7 k Ω-100mA47 k ΩRoHS CompliantLead Free-----------------------
-
-Through HoleTO-226-3, TO-92-3 (TO-226AA)-BulkObsolete1 (Unlimited)--------PNP - Pre-Biased--100 @ 1mA 5V100nA ICBO300mV @ 1mA, 10mA-200MHz--47 kOhms----TO-92-3300mW40V100mA------------------
-
-Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)-Tape & Box (TB)Obsolete1 (Unlimited)--------PNP - Pre-Biased--100 @ 1mA 5V100nA ICBO300mV @ 1mA, 10mA-200MHz--10 k Ω--ROHS3 Compliant--300mW40V100mANOSILICONe3yes3MATTE TINBUILT IN BIAS RESISTORBOTTOMNOT APPLICABLENOT APPLICABLE3O-PBCY-T3COMMERCIAL1SINGLE WITH BUILT-IN RESISTORSWITCHINGPNP200MHz
-
-Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)-Tape & Box (TB)Obsolete1 (Unlimited)--------PNP - Pre-Biased--68 @ 5mA 5V100nA ICBO300mV @ 500μA, 10mA-200MHz--2.2 kOhms-47 kOhms--TO-92-3300mW50V100mA------------------
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