Fairchild/ON Semiconductor FJN4301RBU
- Part Number:
- FJN4301RBU
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2471602-FJN4301RBU
- Description:
- TRANS PREBIAS PNP 300MW TO92-3
- Datasheet:
- FJN4301R
Fairchild/ON Semiconductor FJN4301RBU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FJN4301RBU.
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Surface MountNO
- Transistor Element MaterialSILICON
- PackagingBulk
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMATTE TIN
- Additional FeatureBUILT IN BIAS RESISTOR RATIO IS 1
- HTS Code8541.21.00.75
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT APPLICABLE
- Reach Compliance Codecompliant
- Time@Peak Reflow Temperature-Max (s)NOT APPLICABLE
- Base Part NumberFJN4301
- JESD-30 CodeO-PBCY-T3
- Qualification StatusNot Qualified
- Operating Temperature (Max)150°C
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN RESISTOR
- Power - Max300mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP - Pre-Biased
- DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 10mA 5V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic300mV @ 500μA, 10mA
- Voltage - Collector Emitter Breakdown (Max)50V
- Current - Collector (Ic) (Max)100mA
- Transition Frequency200MHz
- Frequency - Transition200MHz
- Resistor - Base (R1)4.7 k Ω
- Resistor - Emitter Base (R2)4.7 k Ω
- RoHS StatusRoHS Compliant
FJN4301RBU Overview
This product is manufactured by Fairchild/ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet FJN4301RBU or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of FJN4301RBU. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Fairchild/ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet FJN4301RBU or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of FJN4301RBU. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
FJN4301RBU More Descriptions
Trans Digital BJT PNP 50V 100mA 3-Pin TO-92 Bulk
PNP Epitaxial Silicon Transistor
TRANS PREBIAS PNP 300MW TO92-3
PNP Epitaxial Silicon Transistor
TRANS PREBIAS PNP 300MW TO92-3
The three parts on the right have similar specifications to FJN4301RBU.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialPackagingJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureHTS CodeTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Base Part NumberJESD-30 CodeQualification StatusOperating Temperature (Max)Number of ElementsConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionResistor - Base (R1)Resistor - Emitter Base (R2)RoHS StatusSupplier Device PackageView Compare
-
FJN4301RBUThrough HoleTO-226-3, TO-92-3 (TO-226AA)NOSILICONBulke3Obsolete1 (Unlimited)3EAR99MATTE TINBUILT IN BIAS RESISTOR RATIO IS 18541.21.00.75BOTTOMNOT APPLICABLEcompliantNOT APPLICABLEFJN4301O-PBCY-T3Not Qualified150°C1SINGLE WITH BUILT-IN RESISTOR300mWSWITCHINGPNPPNP - Pre-Biased20 @ 10mA 5V100nA ICBO300mV @ 500μA, 10mA50V100mA200MHz200MHz4.7 k Ω4.7 k ΩRoHS Compliant--
-
Through HoleTO-226-3, TO-92-3 (TO-226AA)--Bulk-Obsolete1 (Unlimited)---------------300mW--PNP - Pre-Biased100 @ 1mA 5V100nA ICBO300mV @ 1mA, 10mA40V100mA-200MHz47 kOhms--TO-92-3
-
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)--Tape & Box (TB)-Obsolete1 (Unlimited)---------------300mW--PNP - Pre-Biased68 @ 5mA 5V100nA ICBO300mV @ 500μA, 10mA50V100mA-200MHz10 kOhms47 kOhms-TO-92-3
-
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)--Tape & Box (TB)-Obsolete1 (Unlimited)---------------300mW--PNP - Pre-Biased68 @ 5mA 5V100nA ICBO300mV @ 500μA, 10mA50V100mA-200MHz2.2 kOhms47 kOhms-TO-92-3
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