Fairchild/ON Semiconductor FGA40N65SMD
- Part Number:
- FGA40N65SMD
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2494344-FGA40N65SMD
- Description:
- IGBT 650V 80A 349W TO3P
- ECAD Model:
-
- Datasheet:
- FGA40N65SMD
Fairchild/ON Semiconductor FGA40N65SMD technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FGA40N65SMD.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time6 Weeks
- Contact PlatingTin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-3P-3, SC-65-3
- Number of Pins3
- Weight6.401g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Additional FeatureLOW CONDUCTION LOSS
- HTS Code8541.29.00.95
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation349W
- Number of Elements1
- Rise Time-Max28ns
- Element ConfigurationSingle
- Power Dissipation349W
- Input TypeStandard
- Turn On Delay Time12 ns
- Transistor ApplicationPOWER CONTROL
- Polarity/Channel TypeN-CHANNEL
- Turn-Off Delay Time92 ns
- Collector Emitter Voltage (VCEO)650V
- Max Collector Current80A
- Reverse Recovery Time42 ns
- Collector Emitter Breakdown Voltage650V
- Collector Emitter Saturation Voltage2.5V
- Test Condition400V, 40A, 6 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 40A
- IGBT TypeField Stop
- Gate Charge119nC
- Current - Collector Pulsed (Icm)120A
- Td (on/off) @ 25°C12ns/92ns
- Switching Energy820μJ (on), 260μJ (off)
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max6V
- Fall Time-Max (tf)17ns
- Height20.1mm
- Length16.2mm
- Width5mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FGA40N65SMD Description
FGA40N65SMD is a 650v, 40A field stop IGBT made by onsemi. Using novel field stop IGBT technology, ON Semiconductor FGA40N65SMD field stop 2nd generation IGBT offers the optimum performance for solar inverter, UPS, welder, induction heating, telecom, ESS, and PFC applications where low conduction and switching losses are essential. The FGA40N65SMD operates within ambient temperatures from -55 to 175°C and with a power dissipation of 349W.
FGA40N65SMD Features
Positive temperature co-efficient for an easy parallel operating
High current capability
RoHS compliant
Low saturation voltage: VCE(sat) =1.9V(Typ.) @ IC = 40A
Fast switching: EOFF =6.5uJ/A
Tightened parameter distribution
Maximum junction temperature : TJ =175 °C
FGA40N65SMD Applications
UPS
Welder
PFC
Solar Inverter
ESS
Induction Heating
Telecom
FGA40N65SMD is a 650v, 40A field stop IGBT made by onsemi. Using novel field stop IGBT technology, ON Semiconductor FGA40N65SMD field stop 2nd generation IGBT offers the optimum performance for solar inverter, UPS, welder, induction heating, telecom, ESS, and PFC applications where low conduction and switching losses are essential. The FGA40N65SMD operates within ambient temperatures from -55 to 175°C and with a power dissipation of 349W.
FGA40N65SMD Features
Positive temperature co-efficient for an easy parallel operating
High current capability
RoHS compliant
Low saturation voltage: VCE(sat) =1.9V(Typ.) @ IC = 40A
Fast switching: EOFF =6.5uJ/A
Tightened parameter distribution
Maximum junction temperature : TJ =175 °C
FGA40N65SMD Applications
UPS
Welder
PFC
Solar Inverter
ESS
Induction Heating
Telecom
FGA40N65SMD More Descriptions
Trans IGBT Chip N-CH 650V 80A 3-Pin(3 Tab) TO-3P(N) Rail
FGA40N65SMD Series 650 V 40 A Field Stop IGBT - TO-3PN
Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel
349W 80A 650V Field Stop TO-3P IGBTs ROHS
Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, induction heating, telecom, ESS and PFC applications where low conduction and switching losses are essential.
FGA40N65SMD Series 650 V 40 A Field Stop IGBT - TO-3PN
Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel
349W 80A 650V Field Stop TO-3P IGBTs ROHS
Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, induction heating, telecom, ESS and PFC applications where low conduction and switching losses are essential.
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