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FES8GT/45

Vishay Semiconductor Diodes Division FES8GT/45

Part Number:
FES8GT/45
Manufacturer:
Vishay Semiconductor Diodes Division
Ventron No:
2435865-FES8GT/45
Description:
DIODE GEN PURP 400V 8A TO220AC
ECAD Model:
Datasheet:
FES8GT/45

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Comments
Specifications
Vishay Semiconductor Diodes Division FES8GT/45 technical specifications, attributes, parameters and parts with similar specifications to Vishay Semiconductor Diodes Division FES8GT/45.
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-2
  • Supplier Device Package
    TO-220AC
  • Packaging
    Tube
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Speed
    Fast Recovery =< 500ns, > 200mA (Io)
  • Diode Type
    Standard
  • Current - Reverse Leakage @ Vr
    10μA @ 400V
  • Voltage - Forward (Vf) (Max) @ If
    1.3V @ 8A
  • Operating Temperature - Junction
    -55°C~150°C
  • Voltage - DC Reverse (Vr) (Max)
    400V
  • Current - Average Rectified (Io)
    8A
  • Reverse Recovery Time
    50ns
  • RoHS Status
    Non-RoHS Compliant
Description
FES8GT/45 Overview


FES8GT/45 Features


FES8GT/45 Applications
There are a lot of Vishay Semiconductor Diodes Division
FES8GT/45 applications of single-phase diode rectifier.


DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
Product Comparison
The three parts on the right have similar specifications to FES8GT/45.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Supplier Device Package
    Packaging
    Part Status
    Moisture Sensitivity Level (MSL)
    Speed
    Diode Type
    Current - Reverse Leakage @ Vr
    Voltage - Forward (Vf) (Max) @ If
    Operating Temperature - Junction
    Voltage - DC Reverse (Vr) (Max)
    Current - Average Rectified (Io)
    Reverse Recovery Time
    RoHS Status
    Factory Lead Time
    Mount
    Number of Pins
    Diode Element Material
    Published
    JESD-609 Code
    Pbfree Code
    Number of Terminations
    ECCN Code
    Terminal Finish
    Max Operating Temperature
    Min Operating Temperature
    Additional Feature
    HTS Code
    Subcategory
    Pin Count
    Number of Elements
    Element Configuration
    Case Connection
    Forward Current
    Max Surge Current
    Output Current-Max
    Application
    Max Reverse Voltage (DC)
    Average Rectified Current
    Number of Phases
    Peak Reverse Current
    Max Repetitive Reverse Voltage (Vrrm)
    Peak Non-Repetitive Surge Current
    Reverse Voltage
    Recovery Time
    Radiation Hardening
    View Compare
  • FES8GT/45
    FES8GT/45
    Vishay Semiconductor Diodes Division
    Through Hole
    TO-220-2
    TO-220AC
    Tube
    Obsolete
    1 (Unlimited)
    Fast Recovery =< 500ns, > 200mA (Io)
    Standard
    10μA @ 400V
    1.3V @ 8A
    -55°C~150°C
    400V
    8A
    50ns
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FES8DTHE3/45
    FES8DTHE3/45
    Vishay Semiconductor Diodes Division
    Through Hole
    TO-220-2
    -
    Tube
    Obsolete
    1 (Unlimited)
    Fast Recovery =< 500ns, > 200mA (Io)
    Standard
    10μA @ 200V
    950mV @ 8A
    -55°C~150°C
    -
    -
    35 ns
    ROHS3 Compliant
    20 Weeks
    Through Hole
    2
    SILICON
    2011
    e3
    yes
    2
    EAR99
    Matte Tin (Sn)
    150°C
    -55°C
    FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT
    8541.10.00.80
    Rectifier Diodes
    3
    1
    Single
    CATHODE
    8A
    125A
    8A
    EFFICIENCY
    200V
    8A
    1
    10μA
    200V
    125A
    200V
    35 ns
    No
    FES8GT/45 vs FES8DTHE3/45
  • FES8CTHE3/45
    FES8CTHE3/45
    Vishay Semiconductor Diodes Division
    Through Hole
    TO-220-2
    -
    Tube
    Obsolete
    1 (Unlimited)
    Fast Recovery =< 500ns, > 200mA (Io)
    Standard
    10μA @ 150V
    950mV @ 8A
    -55°C~150°C
    -
    -
    35 ns
    ROHS3 Compliant
    20 Weeks
    Through Hole
    2
    SILICON
    2011
    e3
    yes
    2
    EAR99
    Matte Tin (Sn)
    150°C
    -55°C
    FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT
    8541.10.00.80
    Rectifier Diodes
    3
    1
    Single
    CATHODE
    8A
    125A
    8A
    EFFICIENCY
    150V
    8A
    1
    10μA
    150V
    125A
    150V
    35 ns
    No
    FES8GT/45 vs FES8CTHE3/45
  • FES8ATHE3/45
    FES8ATHE3/45
    Vishay Semiconductor Diodes Division
    Through Hole
    TO-220-2
    -
    Tube
    Obsolete
    1 (Unlimited)
    Fast Recovery =< 500ns, > 200mA (Io)
    Standard
    10μA @ 50V
    950mV @ 8A
    -55°C~150°C
    -
    -
    35 ns
    ROHS3 Compliant
    20 Weeks
    Through Hole
    2
    SILICON
    2011
    e3
    yes
    2
    EAR99
    Matte Tin (Sn)
    150°C
    -55°C
    FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT
    8541.10.00.80
    Rectifier Diodes
    3
    1
    Single
    CATHODE
    8A
    125A
    8A
    EFFICIENCY
    50V
    8A
    1
    10μA
    50V
    125A
    50V
    35 ns
    No
    FES8GT/45 vs FES8ATHE3/45
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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