Fairchild/ON Semiconductor FDW258P
- Part Number:
- FDW258P
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2489768-FDW258P
- Description:
- MOSFET P-CH 12V 9A 8-TSSOP
- ECAD Model:
-
- Datasheet:
- FDW258P
Fairchild/ON Semiconductor FDW258P technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDW258P.
- Mounting TypeSurface Mount
- Package / Case8-TSSOP (0.173, 4.40mm Width)
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- Terminal FinishTIN
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count8
- JESD-30 CodeR-PDSO-G8
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max1.3W Ta
- Operating ModeENHANCEMENT MODE
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs11m Ω @ 9A, 4.5V
- Vgs(th) (Max) @ Id1.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds5.049pF @ 5V
- Current - Continuous Drain (Id) @ 25°C9A Ta
- Gate Charge (Qg) (Max) @ Vgs73nC @ 4.5V
- Drain to Source Voltage (Vdss)12V
- Drive Voltage (Max Rds On,Min Rds On)1.8V 4.5V
- Vgs (Max)±8V
- Drain Current-Max (Abs) (ID)9A
- Drain-source On Resistance-Max0.011Ohm
- DS Breakdown Voltage-Min12V
- RoHS StatusROHS3 Compliant
FDW258P Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 5.049pF @ 5V.There is no drain current on this device since the maximum continuous current it can conduct is 9A.In order for DS breakdown voltage to remain above 12V, it should remain above the 12V level.The transistor must receive a 12V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (1.8V 4.5V).
FDW258P Features
a 12V drain to source voltage (Vdss)
FDW258P Applications
There are a lot of Rochester Electronics, LLC
FDW258P applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 5.049pF @ 5V.There is no drain current on this device since the maximum continuous current it can conduct is 9A.In order for DS breakdown voltage to remain above 12V, it should remain above the 12V level.The transistor must receive a 12V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (1.8V 4.5V).
FDW258P Features
a 12V drain to source voltage (Vdss)
FDW258P Applications
There are a lot of Rochester Electronics, LLC
FDW258P applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
FDW258P More Descriptions
Trans MOSFET P-CH 12V 9A 8-Pin TSSOP T/R
12V/8V, 11/14/20MO, PCH, SINGLE, TSSOP-8, 160A GOX, PTII
MOSFETs 12V/8V PCh MOSFET
SMALL SIGNAL P-CHANNEL MOSFET
MISCELLANEOUS MOSFETS;
12V/8V, 11/14/20MO, PCH, SINGLE, TSSOP-8, 160A GOX, PTII
MOSFETs 12V/8V PCh MOSFET
SMALL SIGNAL P-CHANNEL MOSFET
MISCELLANEOUS MOSFETS;
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