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FDT457N

Fairchild/ON Semiconductor FDT457N

Part Number:
FDT457N
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2478051-FDT457N
Description:
MOSFET N-CH 30V 5A SOT-223
ECAD Model:
Datasheet:
FDT457N

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Specifications
Fairchild/ON Semiconductor FDT457N technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDT457N.
  • Lifecycle Status
    ACTIVE (Last Updated: 10 hours ago)
  • Factory Lead Time
    18 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-261-4, TO-261AA
  • Number of Pins
    4
  • Weight
    250.2mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2017
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    4
  • ECCN Code
    EAR99
  • Resistance
    60mOhm
  • Terminal Finish
    TIN
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    30V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    5A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    3W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    3W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    5 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    60m Ω @ 5A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    235pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    5A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    5.9nC @ 5V
  • Rise Time
    12ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    3 ns
  • Turn-Off Delay Time
    12 ns
  • Continuous Drain Current (ID)
    5A
  • Threshold Voltage
    1.6V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    5A
  • Drain to Source Breakdown Voltage
    30V
  • Max Junction Temperature (Tj)
    150°C
  • Height
    1.8mm
  • Length
    6.5mm
  • Width
    3.56mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description


FDT457N Description
ON Semiconductor's FDT457N is an enhancement mode power field effect transistor with N channels. It comes in TO-261-4 and TO-261AA package options. ON Semiconductor's unique high cell density DMOS technology is used to make these N-Channel enhancement mode power field-effect transistors. This ultra-high-density method is designed to reduce on-state resistance and improve switching performance. Low voltage, low current applications such as laptop computer power management, battery-driven circuits, and DC motor control are well suited to these devices.


FDT457N Features

High-density cell design for extremely low RDS(ON).
High power and current handling capability in a widely used surface mount package.


FDT457N Applications

Notebook computer power management
Battery-powered circuits
DC motor control

FDT457N More Descriptions
N-Channel Enhancement Mode Field Effect Transistor 30V, 5A, 60mΩ
Trans MOSFET N-CH 30V 5A 4-Pin(3 Tab) SOT-223 T/R - Tape and Reel
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:5A; On Resistance, Rds(on):60mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:SOT-223 ;RoHS Compliant: Yes
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance. These products are well suited to low voltage, low current applications such as notebook computer power management, battery powered circuits, and DC motor control.
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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