Fairchild/ON Semiconductor FDN342P

Name: FDN342P
Brand: Fairchild/ON Semiconductor
SKU: 2478033-FDN342P
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDN342P

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2478033-FDN342P

Description:: MOSFET P-CH 20V 2A SSOT-3

ECAD Model:

Datasheet:: FDN342P

Specifications

Fairchild/ON Semiconductor FDN342P technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDN342P.

Lifecycle Status
ACTIVE (Last Updated: 6 days ago)
Factory Lead Time
10 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
30mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
Published
1999
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
80mOhm
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
-20V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
-2A
Number of Elements
1
Power Dissipation-Max
500mW Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
500mW
Turn On Delay Time
20 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
80m Ω @ 2A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
635pF @ 10V
Current - Continuous Drain (Id) @ 25°C
2A Ta
Gate Charge (Qg) (Max) @ Vgs
9nC @ 4.5V
Rise Time
8ns
Drive Voltage (Max Rds On,Min Rds On)
2.5V 4.5V
Vgs (Max)
±12V
Fall Time (Typ)
8 ns
Turn-Off Delay Time
9 ns
Continuous Drain Current (ID)
2A
Threshold Voltage
1.05V
Gate to Source Voltage (Vgs)
12V
Drain Current-Max (Abs) (ID)
2A
Drain to Source Breakdown Voltage
-20V
Dual Supply Voltage
20V
Nominal Vgs
1.05 V
Height
940μm
Length
2.92mm
Width
1.4mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDN342P Description
The cutting-edge PowerTrench technology from ON Semiconductor is used to manufacture this P-Channel 2.5V specified MOSFET. For a wide range of gate drive voltages (2.5V–12V), it has been designed for power management applications.

FDN342P Features
-2 A, -20 V
RDS(ON) = 0.08 Ω @ VGS = -4.5 V
RDS(ON) = 0.13 Ω @ VGS = -2.5 V.
Rugged gate rating
High performance trench technology for extremely low RDS(ON).
Enhanced power SuperSOT?-3 (SOT-23)

FDN342P Applications
Load Switch
Battery Protection
Power Management

FDN342P More Descriptions

P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -2A, 80mΩ
Trans MOSFET P-CH 20V 2A 3-Pin SuperSOT T/R - Product that comes on tape, but is not reeled
This P-Channel 2.5V specified MOSFET is produced in a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications for a wide range of gate drive voltages (2.5V - 12V).
MOSFET, P; Transistor Polarity:P Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):62mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:1.05V; Power Dissipation Pd:500mW; Transistor Case Style:SuperSOT; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:2A; Package / Case:SuperSOT; Power Dissipation Pd:500mW; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:-1.05V; Voltage Vgs Rds on Measurement:4.5V

Certification