FDMS9620S

Fairchild/ON Semiconductor FDMS9620S

Part Number:
FDMS9620S
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2847639-FDMS9620S
Description:
MOSFET 2N-CH 30V 7.5A/10A PWR56
ECAD Model:
Datasheet:
FDMS9620S

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
Fairchild/ON Semiconductor FDMS9620S technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMS9620S.
  • Lifecycle Status
    ACTIVE (Last Updated: 4 days ago)
  • Factory Lead Time
    16 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerWDFN
  • Number of Pins
    8
  • Weight
    228mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Published
    2007
  • JESD-609 Code
    e4
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Resistance
    32MOhm
  • Terminal Finish
    Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
  • Subcategory
    FET General Purpose Power
  • Max Power Dissipation
    2.5W
  • Number of Elements
    2
  • Element Configuration
    Dual
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.5W
  • Case Connection
    DRAIN
  • Power - Max
    1W
  • FET Type
    2 N-Channel (Dual)
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    21.5m Ω @ 7.5A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    665pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    7.5A 10A
  • Gate Charge (Qg) (Max) @ Vgs
    14nC @ 10V
  • Rise Time
    13ns
  • Fall Time (Typ)
    7 ns
  • Turn-Off Delay Time
    27 ns
  • Continuous Drain Current (ID)
    10A
  • Threshold Voltage
    1.6V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    7.5A
  • Drain to Source Breakdown Voltage
    30V
  • Pulsed Drain Current-Max (IDM)
    60A
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Logic Level Gate
  • Height
    750μm
  • Length
    5mm
  • Width
    6mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FDMS9620S Description
This device features a customized dual Power 56 package that houses two specialized MOSFETs. It is intended to deliver the most effective Synchronous Buck power stage possible in terms of PCB consumption and efficiency. A Low Conduction Loss "Low Side" SyncFET is used in conjunction with a Low Switching Loss "High Side" MOSFET.

FDMS9620S Features
Maximum rDS(on) at VGS = 4.5V and lD = 8.?ê is 17mQ.
MoSFET with a high side of Qg
MOSFET with a low rDs(on)low side
Thermostatic dual Power 56 package
Pinout streamlined for easy PCB design
REACH Compliant

FDMS9620S Applications
For use with synchronized buck converter
Power of the Notebook
Point of Load for General Purpose
FDMS9620S More Descriptions
Dual N-Channel 30 V 32 mOhm Surface Mount PowerTrench Mosfet - Power 56
Trans MOSFET Array Dual N-CH 30V 7.5A/10A 8-Pin MLP EP T/R - Tape and Reel
This device includes two specialized MOSFETs in a unique dual Power 56 package. It is designed to provide an optimal Synchronous Buck power stage in terms of efficiency and PCB utilization. The low switching loss high-side MOSFET is complemented by a low conduction loss low-side SyncFET™.
MOSFET, DUAL, N, SMD, MLP; Module Configuration:Dual; Transistor Polarity:N Channel; Continuous Drain Current Id:7.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):21.5mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:2.5W; Transistor Case Style:Power 56; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Cont Current Id N Channel 2:7.5A; Cont Current Id N Channel 3:10A; Current Id Max:10A; On State Resistance Channel 1:21.5mohm; On State Resistance N Channel 2:13mohm; Package / Case:Power 56; Power Dissipation Pd:2.5W; Pulse Current Idm:60A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1.6V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V
Product Comparison
The three parts on the right have similar specifications to FDMS9620S.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Max Power Dissipation
    Number of Elements
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Power - Max
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    FET Technology
    FET Feature
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Technology
    Terminal Position
    Terminal Form
    JESD-30 Code
    Power Dissipation-Max
    Turn On Delay Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    JEDEC-95 Code
    Drain-source On Resistance-Max
    Avalanche Energy Rating (Eas)
    Vgs(th) (Max) @ Id:
    Vgs (Max):
    Technology:
    Supplier Device Package:
    Series:
    Rds On (Max) @ Id, Vgs:
    Power Dissipation (Max):
    Packaging:
    Package / Case:
    Operating Temperature:
    Mounting Type:
    Input Capacitance (Ciss) (Max) @ Vds:
    Gate Charge (Qg) (Max) @ Vgs:
    FET Type:
    FET Feature:
    Drive Voltage (Max Rds On, Min Rds On):
    Drain to Source Voltage (Vdss):
    Current - Continuous Drain (Id) @ 25°C:
    View Compare
  • FDMS9620S
    FDMS9620S
    ACTIVE (Last Updated: 4 days ago)
    16 Weeks
    Surface Mount
    Surface Mount
    8-PowerWDFN
    8
    228mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2007
    e4
    yes
    Active
    1 (Unlimited)
    8
    EAR99
    32MOhm
    Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
    FET General Purpose Power
    2.5W
    2
    Dual
    ENHANCEMENT MODE
    2.5W
    DRAIN
    1W
    2 N-Channel (Dual)
    SWITCHING
    21.5m Ω @ 7.5A, 10V
    3V @ 250μA
    665pF @ 15V
    7.5A 10A
    14nC @ 10V
    13ns
    7 ns
    27 ns
    10A
    1.6V
    20V
    7.5A
    30V
    60A
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    750μm
    5mm
    6mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDMS86105
    ACTIVE (Last Updated: 3 days ago)
    13 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    68.1mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    -
    Tin (Sn)
    FET General Purpose Power
    -
    1
    Single
    ENHANCEMENT MODE
    48W
    DRAIN
    -
    N-Channel
    SWITCHING
    34m Ω @ 6A, 10V
    4V @ 250μA
    645pF @ 50V
    6A Ta 26A Tc
    11nC @ 10V
    2.1ns
    2.4 ns
    12 ns
    6A
    2.8V
    20V
    6A
    100V
    30A
    -
    -
    1.05mm
    5mm
    6mm
    No SVHC
    No
    ROHS3 Compliant
    -
    MOSFET (Metal Oxide)
    DUAL
    FLAT
    R-PDSO-F5
    2.5W Ta 48W Tc
    6.7 ns
    6V 10V
    ±20V
    MO-240AA
    0.034Ohm
    50 mJ
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDMS36101L_F085
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    3V @ 250µA
    ±20V
    MOSFET (Metal Oxide)
    8-PQFN (5x6), Power56
    Automotive, AEC-Q101, PowerTrench®
    26 mOhm @ 20A, 10V
    94W (Tc)
    Tape & Reel (TR)
    8-PowerTDFN
    -55°C ~ 175°C (TJ)
    Surface Mount
    3945pF @ 25V
    84nC @ 10V
    N-Channel
    -
    4.5V, 10V
    100V
    38A (Tc)
  • FDMS86381_F085
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    4V @ 250µA
    ±20V
    MOSFET (Metal Oxide)
    Power56
    Automotive, AEC-Q101, PowerTrench®
    22 mOhm @ 30A, 10V
    50W (Tj)
    Tape & Reel (TR)
    8-PowerTDFN
    -55°C ~ 175°C (TJ)
    Surface Mount
    866pF @ 40V
    21nC @ 10V
    N-Channel
    -
    10V
    80V
    30A (Tc)
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.