Fairchild/ON Semiconductor FDMS9620S
- Part Number:
- FDMS9620S
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2847639-FDMS9620S
- Description:
- MOSFET 2N-CH 30V 7.5A/10A PWR56
- Datasheet:
- FDMS9620S
Fairchild/ON Semiconductor FDMS9620S technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMS9620S.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time16 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-PowerWDFN
- Number of Pins8
- Weight228mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- Published2007
- JESD-609 Codee4
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Resistance32MOhm
- Terminal FinishNickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
- SubcategoryFET General Purpose Power
- Max Power Dissipation2.5W
- Number of Elements2
- Element ConfigurationDual
- Operating ModeENHANCEMENT MODE
- Power Dissipation2.5W
- Case ConnectionDRAIN
- Power - Max1W
- FET Type2 N-Channel (Dual)
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs21.5m Ω @ 7.5A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds665pF @ 15V
- Current - Continuous Drain (Id) @ 25°C7.5A 10A
- Gate Charge (Qg) (Max) @ Vgs14nC @ 10V
- Rise Time13ns
- Fall Time (Typ)7 ns
- Turn-Off Delay Time27 ns
- Continuous Drain Current (ID)10A
- Threshold Voltage1.6V
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)7.5A
- Drain to Source Breakdown Voltage30V
- Pulsed Drain Current-Max (IDM)60A
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureLogic Level Gate
- Height750μm
- Length5mm
- Width6mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FDMS9620S Description
This device features a customized dual Power 56 package that houses two specialized MOSFETs. It is intended to deliver the most effective Synchronous Buck power stage possible in terms of PCB consumption and efficiency. A Low Conduction Loss "Low Side" SyncFET is used in conjunction with a Low Switching Loss "High Side" MOSFET.
FDMS9620S Features
Maximum rDS(on) at VGS = 4.5V and lD = 8.?ê is 17mQ.
MoSFET with a high side of Qg
MOSFET with a low rDs(on)low side
Thermostatic dual Power 56 package
Pinout streamlined for easy PCB design
REACH Compliant
FDMS9620S Applications
For use with synchronized buck converter
Power of the Notebook
Point of Load for General Purpose
This device features a customized dual Power 56 package that houses two specialized MOSFETs. It is intended to deliver the most effective Synchronous Buck power stage possible in terms of PCB consumption and efficiency. A Low Conduction Loss "Low Side" SyncFET is used in conjunction with a Low Switching Loss "High Side" MOSFET.
FDMS9620S Features
Maximum rDS(on) at VGS = 4.5V and lD = 8.?ê is 17mQ.
MoSFET with a high side of Qg
MOSFET with a low rDs(on)low side
Thermostatic dual Power 56 package
Pinout streamlined for easy PCB design
REACH Compliant
FDMS9620S Applications
For use with synchronized buck converter
Power of the Notebook
Point of Load for General Purpose
FDMS9620S More Descriptions
Dual N-Channel 30 V 32 mOhm Surface Mount PowerTrench Mosfet - Power 56
Trans MOSFET Array Dual N-CH 30V 7.5A/10A 8-Pin MLP EP T/R - Tape and Reel
This device includes two specialized MOSFETs in a unique dual Power 56 package. It is designed to provide an optimal Synchronous Buck power stage in terms of efficiency and PCB utilization. The low switching loss high-side MOSFET is complemented by a low conduction loss low-side SyncFET™.
MOSFET, DUAL, N, SMD, MLP; Module Configuration:Dual; Transistor Polarity:N Channel; Continuous Drain Current Id:7.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):21.5mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:2.5W; Transistor Case Style:Power 56; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Cont Current Id N Channel 2:7.5A; Cont Current Id N Channel 3:10A; Current Id Max:10A; On State Resistance Channel 1:21.5mohm; On State Resistance N Channel 2:13mohm; Package / Case:Power 56; Power Dissipation Pd:2.5W; Pulse Current Idm:60A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1.6V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V
Trans MOSFET Array Dual N-CH 30V 7.5A/10A 8-Pin MLP EP T/R - Tape and Reel
This device includes two specialized MOSFETs in a unique dual Power 56 package. It is designed to provide an optimal Synchronous Buck power stage in terms of efficiency and PCB utilization. The low switching loss high-side MOSFET is complemented by a low conduction loss low-side SyncFET™.
MOSFET, DUAL, N, SMD, MLP; Module Configuration:Dual; Transistor Polarity:N Channel; Continuous Drain Current Id:7.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):21.5mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:2.5W; Transistor Case Style:Power 56; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Cont Current Id N Channel 2:7.5A; Cont Current Id N Channel 3:10A; Current Id Max:10A; On State Resistance Channel 1:21.5mohm; On State Resistance N Channel 2:13mohm; Package / Case:Power 56; Power Dissipation Pd:2.5W; Pulse Current Idm:60A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1.6V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V
The three parts on the right have similar specifications to FDMS9620S.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryMax Power DissipationNumber of ElementsElement ConfigurationOperating ModePower DissipationCase ConnectionPower - MaxFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)FET TechnologyFET FeatureHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTechnologyTerminal PositionTerminal FormJESD-30 CodePower Dissipation-MaxTurn On Delay TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)JEDEC-95 CodeDrain-source On Resistance-MaxAvalanche Energy Rating (Eas)Vgs(th) (Max) @ Id:Vgs (Max):Technology:Supplier Device Package:Series:Rds On (Max) @ Id, Vgs:Power Dissipation (Max):Packaging:Package / Case:Operating Temperature:Mounting Type:Input Capacitance (Ciss) (Max) @ Vds:Gate Charge (Qg) (Max) @ Vgs:FET Type:FET Feature:Drive Voltage (Max Rds On, Min Rds On):Drain to Source Voltage (Vdss):Current - Continuous Drain (Id) @ 25°C:View Compare
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FDMS9620SACTIVE (Last Updated: 4 days ago)16 WeeksSurface MountSurface Mount8-PowerWDFN8228mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®2007e4yesActive1 (Unlimited)8EAR9932MOhmNickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)FET General Purpose Power2.5W2DualENHANCEMENT MODE2.5WDRAIN1W2 N-Channel (Dual)SWITCHING21.5m Ω @ 7.5A, 10V3V @ 250μA665pF @ 15V7.5A 10A14nC @ 10V13ns7 ns27 ns10A1.6V20V7.5A30V60AMETAL-OXIDE SEMICONDUCTORLogic Level Gate750μm5mm6mmNo SVHCNoROHS3 CompliantLead Free------------------------------
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ACTIVE (Last Updated: 3 days ago)13 WeeksSurface MountSurface Mount8-PowerTDFN868.1mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®-e3yesActive1 (Unlimited)5EAR99-Tin (Sn)FET General Purpose Power-1SingleENHANCEMENT MODE48WDRAIN-N-ChannelSWITCHING34m Ω @ 6A, 10V4V @ 250μA645pF @ 50V6A Ta 26A Tc11nC @ 10V2.1ns2.4 ns12 ns6A2.8V20V6A100V30A--1.05mm5mm6mmNo SVHCNoROHS3 Compliant-MOSFET (Metal Oxide)DUALFLATR-PDSO-F52.5W Ta 48W Tc6.7 ns6V 10V±20VMO-240AA0.034Ohm50 mJ------------------
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----------------------------------------------------------------3V @ 250µA±20VMOSFET (Metal Oxide)8-PQFN (5x6), Power56Automotive, AEC-Q101, PowerTrench®26 mOhm @ 20A, 10V94W (Tc)Tape & Reel (TR)8-PowerTDFN-55°C ~ 175°C (TJ)Surface Mount3945pF @ 25V84nC @ 10VN-Channel-4.5V, 10V100V38A (Tc)
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----------------------------------------------------------------4V @ 250µA±20VMOSFET (Metal Oxide)Power56Automotive, AEC-Q101, PowerTrench®22 mOhm @ 30A, 10V50W (Tj)Tape & Reel (TR)8-PowerTDFN-55°C ~ 175°C (TJ)Surface Mount866pF @ 40V21nC @ 10VN-Channel-10V80V30A (Tc)
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