Fairchild/ON Semiconductor FDA59N30

Name: FDA59N30
Brand: Fairchild/ON Semiconductor
SKU: 2479115-FDA59N30
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDA59N30

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2479115-FDA59N30

Description:: MOSFET N-CH 300V 59A TO-3P

ECAD Model:

Datasheet:: FDA59N30

Specifications

Fairchild/ON Semiconductor FDA59N30 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDA59N30.

Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Factory Lead Time
7 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Number of Pins
3
Weight
6.401g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
UniFET™
Published
2013
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
56MOhm
Terminal Finish
Tin (Sn)
Additional Feature
FAST SWITCHING
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Number of Elements
1
Power Dissipation-Max
500W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
500W
Turn On Delay Time
140 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
56m Ω @ 29.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
4670pF @ 25V
Current - Continuous Drain (Id) @ 25°C
59A Tc
Gate Charge (Qg) (Max) @ Vgs
100nC @ 10V
Rise Time
575ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
200 ns
Turn-Off Delay Time
120 ns
Continuous Drain Current (ID)
59A
Threshold Voltage
5V
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
300V
Nominal Vgs
5 V
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDA59N30 Description
A high voltage MOSFET family called UniFETTM MOSFET is based on DMOS and planar stripe technology. This MOSFET is designed to offer superior switching performance, increased avalanche energy strength, and reduced on-state resistance. For switching power converter applications such power factor correction (PFC), flat panel display (FPD) TV power, ATX, and electronic lamp ballasts, this device family is appropriate.

FDA59N30 Features
RDS(on) = 56m? ( Max.)@ VGS = 10V, ID = 29.5A
Low gate charge ( Typ. 77nC)
Low Crss ( Typ. 80pF)
100% avalanche tested

FDA59N30 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial

FDA59N30 More Descriptions

N-Channel Power MOSFET, UniFETTM, 300V, 59A, 56mΩ, TO-3P
MOSFET N-CH 300V 59A TO-3P / Trans MOSFET N-CH 300V 59A 3-Pin(3 Tab) TO-3P Tube
N-Channel 300 V 0.056 Ohm Flange Mount UniFET Mosfet TO-3PN
MOSFET, N, TO-3P; Transistor Polarity:N Channel; Continuous Drain Current Id:59A; Drain Source Voltage Vds:300V; On Resistance Rds(on):56mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:500W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-3P; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:59A; Package / Case:TO-3P; Power Dissipation Pd:500W; Power Dissipation Pd:500W; Pulse Current Idm:236A; Termination Type:Through Hole; Voltage Vds Typ:300V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

Certification