ON Semiconductor EMC4DXV5T1G
- Part Number:
- EMC4DXV5T1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2462176-EMC4DXV5T1G
- Description:
- TRANS PREBIAS NPN/PNP SOT553
- ECAD Model:
-
- Datasheet:
- EMC4DXV5T1G
ON Semiconductor EMC4DXV5T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor EMC4DXV5T1G.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time4 Weeks
- Mounting TypeSurface Mount
- Package / CaseSOT-553
- Surface MountYES
- Number of Pins5
- PackagingTape & Reel (TR)
- Published2010
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Additional FeatureBUILT-IN BIAS RESISTOR RATIO IS 1
- SubcategoryBIP General Purpose Small Signal
- Voltage - Rated DC50V
- Max Power Dissipation500mW
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Current Rating100mA
- Base Part NumberMC4
- Pin Count5
- Number of Elements2
- PolarityNPN, PNP
- ConfigurationCOMPLEX
- Power Dissipation357mW
- Transistor ApplicationSWITCHING
- Halogen FreeHalogen Free
- Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA 10V
- Current - Collector Cutoff (Max)500nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 300μA, 10mA
- Collector Emitter Breakdown Voltage50V
- hFE Min80
- Resistor - Base (R1)47k Ω, 10k Ω
- Continuous Collector Current100mA
- Resistor - Emitter Base (R2)47k Ω
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
EMC4DXV5T1G Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet EMC4DXV5T1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of EMC4DXV5T1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet EMC4DXV5T1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of EMC4DXV5T1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
EMC4DXV5T1G More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
Trans Digital BJT NPN/PNP 50V 100mA Automotive 5-Pin SOT-553 T/R
Pre-Biased "digital" Transistor,50V V(Br)Ceo,100Ma I(C),sot-553 |Onsemi EMC4DXV5T1G
Complementary Bipolar Digital Transistor (BRT)
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Trans Digital BJT NPN/PNP 50V 100mA Automotive 5-Pin SOT-553 T/R
Pre-Biased "digital" Transistor,50V V(Br)Ceo,100Ma I(C),sot-553 |Onsemi EMC4DXV5T1G
Complementary Bipolar Digital Transistor (BRT)
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
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