Rohm Semiconductor DTB123YKT146

Name: DTB123YKT146
Brand: Rohm Semiconductor
SKU: 3069464-DTB123YKT146
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DTB123YKT146

Manufacturer:: Rohm Semiconductor

Ventron No:: 3069464-DTB123YKT146

Description:: TRANS PREBIAS PNP 200MW SMT3

ECAD Model:

Datasheet:: DTB123YKT146

Specifications

Rohm Semiconductor DTB123YKT146 technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor DTB123YKT146.

Factory Lead Time
13 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Packaging
Tape & Reel (TR)
Published
2005
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
SMD/SMT
ECCN Code
EAR99
Terminal Finish
TIN SILVER COPPER
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Additional Feature
BUILT-IN BIAS RESISTOR RATIO IS 4.5
HTS Code
8541.21.00.75
Subcategory
BIP General Purpose Small Signal
Voltage - Rated DC
-50V
Max Power Dissipation
200mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-500mA
Time@Peak Reflow Temperature-Max (s)
10
Base Part Number
DTB123
Pin Count
3
Max Output Current
500mA
Operating Supply Voltage
50V
Number of Elements
1
Polarity
PNP
Element Configuration
Single
Power Dissipation
200mW
Transistor Application
SWITCHING
Transistor Type
PNP - Pre-Biased
Collector Emitter Voltage (VCEO)
300mV
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
56 @ 50mA 5V
Current - Collector Cutoff (Max)
500nA
Vce Saturation (Max) @ Ib, Ic
300mV @ 2.5mA, 50mA
Collector Emitter Breakdown Voltage
50V
Transition Frequency
200MHz
Max Breakdown Voltage
50V
Frequency - Transition
200MHz
hFE Min
56
Resistor - Base (R1)
2.2 k Ω
Continuous Collector Current
-500mA
Resistor - Emitter Base (R2)
10 k Ω
Height
1.1mm
Length
2.9mm
Width
1.6mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

DTB123YKT146 Overview
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet DTB123YKT146 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of DTB123YKT146. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

DTB123YKT146 More Descriptions

Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
Trans Digital BJT PNP 50V 500mA 200mW 3-Pin SMT T/R / TRANS PREBIAS PNP 200MW SMT3
DTB123YK Series 50 V 500 mA Surface Mount PNP Digital Transistor - SC-59
TRANSISTOR DIGITAL SC-59 500MA PNP; Transistor Type:General Purpose; Transistor Polarity:PNP; Collector-to-Emitter Breakdown Voltage:50V; Current Ic Continuous a Max:500mA; Power Dissipation:200mW; Min Hfe:56; ft, Typ:200MHz; Case ;RoHS Compliant: Yes
TRANSISTOR DIGITAL SC-59 500MA PNP; Digital Transistor Polarity: Single PNP; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: -500mA; Base Input Resistor R1: 2.2kohm; Base-Emitter Resistor R2: 10kohm; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-346; No. of Pins: 3 Pin; Product Range: DTB123Y Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Ic Continuous a Max: 500mA; DC Collector Current: 500mA; DC Current Gain hFE: 56hFE; Gain Bandwidth ft Typ: 200MHz; Hfe Min: 56; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Power Dissipation Pd: 200mW; Termination Type: Surface Mount Device; Transistor Case Style: SOT-346; Transistor Polarity: PNP; Transistor Type: General Purpose; Transition Frequency ft: 200MHz

Product Comparison

The three parts on the right have similar specifications to DTB123YKT146.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Terminal Finish

Max Operating Temperature

Min Operating Temperature

Additional Feature

HTS Code

Subcategory

Voltage - Rated DC

Max Power Dissipation

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Max Output Current

Operating Supply Voltage

Number of Elements

Polarity

Element Configuration

Power Dissipation

Transistor Application

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Max Breakdown Voltage

Frequency - Transition

hFE Min

Resistor - Base (R1)

Continuous Collector Current

Resistor - Emitter Base (R2)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Transistor Element Material

JESD-30 Code

Qualification Status

VCEsat-Max

View Compare
DTB123YKT146

Rohm Semiconductor

13 Weeks

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

Tape & Reel (TR)

2005

e1

yes

Active

1 (Unlimited)

3

SMD/SMT

EAR99

TIN SILVER COPPER

150°C

-55°C

BUILT-IN BIAS RESISTOR RATIO IS 4.5

8541.21.00.75

BIP General Purpose Small Signal

-50V

200mW

DUAL

GULL WING

260

-500mA

10

DTB123

3

500mA

50V

1

PNP

Single

200mW

SWITCHING

PNP - Pre-Biased

300mV

500mA

56 @ 50mA 5V

500nA

300mV @ 2.5mA, 50mA

50V

200MHz

50V

200MHz

56

2.2 k Ω

-500mA

10 k Ω

1.1mm

2.9mm

1.6mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-
DTB123YCT116

Rohm Semiconductor

13 Weeks

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

Tape & Reel (TR)

1998

e1

-

Active

1 (Unlimited)

3

-

EAR99

TIN SILVER COPPER

150°C

-

BUILT-IN BIAS RESISTOR RATIO IS 4.5

8541.21.00.75

BIP General Purpose Small Signal

-

200mW

DUAL

GULL WING

260

-

10

-

3

-

-

1

PNP

Single

-

SWITCHING

PNP - Pre-Biased

300mV

500mA

56 @ 50mA 5V

500nA

300mV @ 2.5mA, 50mA

50V

200MHz

50V

200MHz

-

2.2 k Ω

-

10 k Ω

-

-

-

No SVHC

No

ROHS3 Compliant

-

SILICON

-

-

-

DTB123YKT146 vs DTB123YCT116
DTB113ESTP

Rohm Semiconductor

-

Through Hole

Through Hole

SC-72 Formed Leads

-

Tape & Box (TB)

2006

e1

-

Obsolete

1 (Unlimited)

3

-

EAR99

TIN SILVER COPPER

150°C

-

BUILT IN BIAS RESISTOR RATIO IS 1

8541.21.00.75

BIP General Purpose Small Signal

-50V

300mW

-

-

260

-500mA

10

DTB113

3

-

-

1

PNP

Single

-

SWITCHING

PNP - Pre-Biased

300mV

500mA

33 @ 50mA 5V

500nA

300mV @ 2.5mA, 50mA

50V

200MHz

50V

200MHz

33

1 k Ω

-

1 k Ω

-

-

-

-

-

ROHS3 Compliant

Lead Free

SILICON

R-PSIP-T3

Not Qualified

0.3 V

DTB123YKT146 vs DTB113ESTP
DTB122JKT146

Rohm Semiconductor

7 Weeks

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

Tape & Reel (TR)

2007

e1

yes

Not For New Designs

1 (Unlimited)

3

-

EAR99

Tin/Silver/Copper (Sn/Ag/Cu)

150°C

-

-

8541.21.00.75

BIP General Purpose Small Signal

-50V

200mW

DUAL

GULL WING

260

-500mA

10

DTB122

3

500mA

50V

1

PNP

Single

200mW

SWITCHING

PNP - Pre-Biased

300mV

500mA

47 @ 50mA 5V

10μA

300mV @ 2.5mA, 50mA

50V

200MHz

-

200MHz

47

220 Ω

-500mA

4.7 k Ω

-

-

-

-

No

ROHS3 Compliant

Lead Free

SILICON

-

-

-

DTB123YKT146 vs DTB122JKT146