DMT4005SCT

Diodes Incorporated DMT4005SCT

Part Number:
DMT4005SCT
Manufacturer:
Diodes Incorporated
Ventron No:
2850656-DMT4005SCT
Description:
MOSFET NCH 40V 100A TO220AB
ECAD Model:
Datasheet:
DMT4005SCT

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Specifications
Diodes Incorporated DMT4005SCT technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMT4005SCT.
  • Factory Lead Time
    24 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    Automotive, AEC-Q101
  • Published
    2016
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Additional Feature
    HIGH RELIABILITY
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    SINGLE
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    not_compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • JESD-30 Code
    R-PSFM-T3
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    2.3W Ta 104W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    4.7m Ω @ 50A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    3062pF @ 20V
  • Current - Continuous Drain (Id) @ 25°C
    100A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    49.1nC @ 10V
  • Drain to Source Voltage (Vdss)
    40V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Continuous Drain Current (ID)
    100A
  • JEDEC-95 Code
    TO-220AB
  • Drain-source On Resistance-Max
    0.0047Ohm
  • Pulsed Drain Current-Max (IDM)
    160A
  • DS Breakdown Voltage-Min
    40V
  • Avalanche Energy Rating (Eas)
    52.8 mJ
  • RoHS Status
    ROHS3 Compliant
Description
DMT4005SCT Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 52.8 mJ.A device's maximum input capacitance is 3062pF @ 20V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 100A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its maximum pulsed drain current is 160A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 40V.To operate this transistor, you need to apply a 40V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

DMT4005SCT Features
the avalanche energy rating (Eas) is 52.8 mJ
a continuous drain current (ID) of 100A
based on its rated peak drain current 160A.
a 40V drain to source voltage (Vdss)


DMT4005SCT Applications
There are a lot of Diodes Incorporated
DMT4005SCT applications of single MOSFETs transistors.


Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
DMT4005SCT More Descriptions
Trans MOSFET N-CH 40V 100A Automotive 3-Pin(3 Tab) TO-220 Tube
MOSFET BVDSS: 31V~40V TO220-3 TUBE 50PCS
60V N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGSDiodes Inc SCT
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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