Diodes Incorporated DMN2300UFL4-7

Name: DMN2300UFL4-7
Brand: Diodes Incorporated
SKU: 2473381-DMN2300UFL4-7
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DMN2300UFL4-7

Manufacturer:: Diodes Incorporated

Ventron No:: 2473381-DMN2300UFL4-7

Description:: MOSFET 2N-CH 20V 2.11A 6DFN

ECAD Model:

Datasheet:: DMN2300UFL4-7

Specifications

Diodes Incorporated DMN2300UFL4-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN2300UFL4-7.

Factory Lead Time
16 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
6-XFDFN Exposed Pad
Number of Pins
6
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Series
Automotive, AEC-Q101
Published
2014
JESD-609 Code
e4
Pbfree Code
yes
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory
FET General Purpose Power
Max Power Dissipation
530mW
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Number of Channels
2
Power Dissipation
1.39W
Turn On Delay Time
3.5 ns
FET Type
2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs
195m Ω @ 300mA, 4.5V
Vgs(th) (Max) @ Id
950mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
128.6pF @ 25V
Current - Continuous Drain (Id) @ 25°C
2.11A Ta
Gate Charge (Qg) (Max) @ Vgs
3.2nC @ 4.5V
Rise Time
2.8ns
Fall Time (Typ)
13 ns
Turn-Off Delay Time
38 ns
Continuous Drain Current (ID)
2.11A
Gate to Source Voltage (Vgs)
8V
Drain to Source Breakdown Voltage
20V
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Standard
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

DMN2300UFL4-7 Overview
This product is manufactured by Diodes Incorporated and belongs to the category of obsolete (EOL) components. The images we provide are for reference only, for detailed product information please see specification sheet DMN2300UFL4-7 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of DMN2300UFL4-7. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

DMN2300UFL4-7 More Descriptions

Dual N-Channel 20V 195 mOhm 530 mW Enhancement Mode Mosfet -X2-DFN1310-6
Small Signal Field-Effect Transistor, 2.11A I(D), N-Channel, Metal-oxide Semiconductor FET
Transistor MOSFET Array Dual N-CH 20V 2.11A 6-Pin X2-DFN1310 T/R
Mosfet, Dual, N-Ch, 20V, 2.11A Rohs Compliant: Yes |Diodes Inc. DMN2300UFL4-7
Trans MOSFET N-CH 20V 2.11A Automotive 6-Pin X2-DFN T/R

Product Comparison

The three parts on the right have similar specifications to DMN2300UFL4-7.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

ECCN Code

Terminal Finish

Subcategory

Max Power Dissipation

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Number of Channels

Power Dissipation

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

FET Technology

FET Feature

REACH SVHC

RoHS Status

Lead Free

Technology

Power Dissipation-Max

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Transistor Element Material

Number of Terminations

Number of Elements

Operating Mode

Transistor Application

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

Height

Length

Width

Radiation Hardening

View Compare
DMN2300UFL4-7

Diodes Incorporated

16 Weeks

Surface Mount

Surface Mount

6-XFDFN Exposed Pad

6

-55°C~150°C TJ

Cut Tape (CT)

Automotive, AEC-Q101

2014

e4

yes

Discontinued

1 (Unlimited)

EAR99

Nickel/Palladium/Gold (Ni/Pd/Au)

FET General Purpose Power

530mW

260

40

2

1.39W

3.5 ns

2 N-Channel (Dual)

195m Ω @ 300mA, 4.5V

950mV @ 250μA

128.6pF @ 25V

2.11A Ta

3.2nC @ 4.5V

2.8ns

13 ns

38 ns

2.11A

8V

20V

METAL-OXIDE SEMICONDUCTOR

Standard

No SVHC

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
DMN2028UFDF-13

Diodes Incorporated

14 Weeks

Surface Mount

Surface Mount

6-UDFN Exposed Pad

-

-55°C~150°C TJ

Tape & Reel (TR)

-

2015

e4

-

Active

1 (Unlimited)

EAR99

Nickel/Palladium/Gold (Ni/Pd/Au)

-

-

NOT SPECIFIED

NOT SPECIFIED

-

-

-

N-Channel

25m Ω @ 4A, 4.5V

1V @ 250μA

907pF @ 10V

7.9A Ta

18nC @ 8V

-

-

-

7.9A

-

-

-

-

-

ROHS3 Compliant

-

MOSFET (Metal Oxide)

660mW Ta

20V

1.5V 4.5V

±8V

-

-

-

-

-

-

-

-

-

-

-

DMN2300UFL4-7 vs DMN2028UFDF-13
DMN2400UFDQ-13

Diodes Incorporated

6 Weeks

Surface Mount

Surface Mount

3-PowerUDFN

3

-55°C~150°C TJ

Tape & Reel (TR)

-

2015

e4

-

Active

1 (Unlimited)

EAR99

Nickel/Palladium/Gold (Ni/Pd/Au)

-

-

NOT SPECIFIED

NOT SPECIFIED

-

-

-

N-Channel

600m Ω @ 200mA, 4.5V

1V @ 250μA

37pF @ 16V

900mA Ta

0.5nC @ 4.5V

-

-

-

900mA

-

-

-

-

-

ROHS3 Compliant

-

MOSFET (Metal Oxide)

400mW Ta

20V

1.5V 4.5V

±12V

-

-

-

-

-

-

-

-

-

-

-

DMN2300UFL4-7 vs DMN2400UFDQ-13
DMN2028UFDH-7

Diodes Incorporated

16 Weeks

Surface Mount

Surface Mount

8-PowerVDFN

8

-55°C~150°C TJ

Tape & Reel (TR)

Automotive, AEC-Q101

2013

e3

yes

Active

1 (Unlimited)

EAR99

Matte Tin (Sn)

FET General Purpose Power

1.1W

260

40

2

-

53 ns

2 N-Channel (Dual) Common Drain

20m Ω @ 4A, 10V

1V @ 250μA

151pF @ 10V

-

8.5nC @ 4.5V

77ns

234 ns

561 ns

6.8A

12V

20V

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

No SVHC

ROHS3 Compliant

-

-

-

20V

-

-

SILICON

8

2

ENHANCEMENT MODE

SWITCHING

0.036Ohm

40A

800μm

3.05mm

3.05mm

No

DMN2300UFL4-7 vs DMN2028UFDH-7