DMC6040SSD-13

Diodes Incorporated DMC6040SSD-13

Part Number:
DMC6040SSD-13
Manufacturer:
Diodes Incorporated
Ventron No:
3069716-DMC6040SSD-13
Description:
MOSFET N/P-CH 60V 5.1A/3.1A 8-SO
ECAD Model:
Datasheet:
DMC6040SSD-13

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Specifications
Diodes Incorporated DMC6040SSD-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMC6040SSD-13.
  • Factory Lead Time
    23 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Weight
    73.992255mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2014
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Additional Feature
    HIGH RELIABILITY
  • Max Power Dissipation
    1.24W
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Reference Standard
    AEC-Q101
  • Number of Elements
    2
  • Number of Channels
    2
  • Operating Mode
    ENHANCEMENT MODE
  • Turn On Delay Time
    3.7 ns
  • FET Type
    N and P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    40m Ω @ 8A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1130pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    5.1A 3.1A
  • Gate Charge (Qg) (Max) @ Vgs
    20.8nC @ 10V
  • Rise Time
    6.3ns
  • Drain to Source Voltage (Vdss)
    60V
  • Polarity/Channel Type
    N-CHANNEL AND P-CHANNEL
  • Fall Time (Typ)
    26.1 ns
  • Turn-Off Delay Time
    58.7 ns
  • Continuous Drain Current (ID)
    3.1A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    5.1A
  • Drain-source On Resistance-Max
    0.04Ohm
  • Drain to Source Breakdown Voltage
    -60V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Logic Level Gate
  • RoHS Status
    ROHS3 Compliant
Description
DMC6040SSD-13 Overview
This product is manufactured by Diodes Incorporated and belongs to the category of obsolete (EOL) components. The images we provide are for reference only, for detailed product information please see specification sheet DMC6040SSD-13 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of DMC6040SSD-13. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
DMC6040SSD-13 More Descriptions
Mosfet, N & P-Ch, 5.1A, 60V, 150Deg C Rohs Compliant: Yes |Diodes Inc. DMC6040SSD-13
Small Signal Field-Effect Transistor, 5.1A I(D), 60V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
Trans MOSFET N/P-CH 60V 5.1A/3.1A 8-Pin SO T/R
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET, N P, 60V VDS, 20±V VGSDiodes Inc SCT
null 40mΩ@8A,10V 1.24W 1PCSN-Channel&1PCSP-Channel SOP-8 MOSFETs ROHS
MOSFET BVDSS: 41V~60V SO-8 T&R 2.5K
N/P-Ch Fet 60V 40mOhm 6,5A SO-8
MOSFET N/P-CH 60V 5.1A/3.1A 8SO
Product Comparison
The three parts on the right have similar specifications to DMC6040SSD-13.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Max Power Dissipation
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Reference Standard
    Number of Elements
    Number of Channels
    Operating Mode
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Polarity/Channel Type
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    FET Technology
    FET Feature
    RoHS Status
    Accessory Type
    View Compare
  • DMC6040SSD-13
    DMC6040SSD-13
    23 Weeks
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    73.992255mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2014
    e3
    Active
    1 (Unlimited)
    8
    EAR99
    Matte Tin (Sn)
    HIGH RELIABILITY
    1.24W
    DUAL
    GULL WING
    260
    30
    AEC-Q101
    2
    2
    ENHANCEMENT MODE
    3.7 ns
    N and P-Channel
    SWITCHING
    40m Ω @ 8A, 10V
    3V @ 250μA
    1130pF @ 15V
    5.1A 3.1A
    20.8nC @ 10V
    6.3ns
    60V
    N-CHANNEL AND P-CHANNEL
    26.1 ns
    58.7 ns
    3.1A
    20V
    5.1A
    0.04Ohm
    -60V
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    ROHS3 Compliant
    -
    -
  • DMC6018-2
    2 Weeks
    -
    -
    -
    -
    -
    -
    -
    -
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    Active
    1 (Unlimited)
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    Circulator
  • DMC6018-3
    2 Weeks
    -
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    Active
    1 (Unlimited)
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    Circulator
  • DMC6018-5
    2 Weeks
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Active
    1 (Unlimited)
    -
    -
    -
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    Circulator
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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