DMC4050SSD-13

Diodes Incorporated DMC4050SSD-13

Part Number:
DMC4050SSD-13
Manufacturer:
Diodes Incorporated
Ventron No:
3553985-DMC4050SSD-13
Description:
MOSFET N/P-CH 40V 5.3A 8SO
ECAD Model:
Datasheet:
DMC4050SSD-13

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
Diodes Incorporated DMC4050SSD-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMC4050SSD-13.
  • Factory Lead Time
    17 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Weight
    73.992255mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2011
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn) - annealed
  • Additional Feature
    HIGH RELIABILITY
  • Subcategory
    Other Transistors
  • Max Power Dissipation
    2.14W
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    DMC4050
  • Pin Count
    8
  • Number of Elements
    2
  • Number of Channels
    2
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.14W
  • Turn On Delay Time
    8.08 ns
  • Power - Max
    1.8W
  • FET Type
    N and P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    45m Ω @ 3A, 10V
  • Vgs(th) (Max) @ Id
    1.8V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1790.8pF @ 20V
  • Current - Continuous Drain (Id) @ 25°C
    5.3A
  • Gate Charge (Qg) (Max) @ Vgs
    37.56nC @ 10V
  • Rise Time
    15.14ns
  • Drain to Source Voltage (Vdss)
    40V
  • Polarity/Channel Type
    N-CHANNEL AND P-CHANNEL
  • Fall Time (Typ)
    5.27 ns
  • Turn-Off Delay Time
    24.29 ns
  • Continuous Drain Current (ID)
    5.8A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain-source On Resistance-Max
    0.06Ohm
  • DS Breakdown Voltage-Min
    40V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Logic Level Gate
  • Height
    1.5mm
  • Length
    4.95mm
  • Width
    3.95mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
DMC4050SSD-13 Overview
This product is manufactured by Diodes Incorporated and belongs to the category of obsolete (EOL) components. The images we provide are for reference only, for detailed product information please see specification sheet DMC4050SSD-13 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of DMC4050SSD-13. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
DMC4050SSD-13 More Descriptions
DMC4050SSD 40 V 5.3 A N & P Channel Enhancement Mode Mosfet - SOIC-8
40V Compl. Pair Enhancement MOSFET SOIC8 | Diodes Inc DMC4050SSD-13
Mosfet, Dual, N/P-Ch, 40V, 5.3A Rohs Compliant: Yes |Diodes Inc. DMC4050SSD-13
Power Field-Effect Transistor, 4.2A I(D), 40V, 0.06ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.